SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

The micro-bolometer is important in the field of infrared imaging, although improvements in its performance have been limited by traditional materials. SiGe/Si multi-quantum-well materials (SiGe/Si MQWs) are novelty thermal-sensitive materials with a significantly high TCR and a comparably low 1/f n...

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Bibliographic Details
Published in:Micromachines (Basel) Vol. 12; no. 12; p. 1553
Main Authors: Fang, Zhong, He, Yong, Chen, Zhequan, Shi, Yunlei, Jiao, Junjie, Pan, Xuchao
Format: Journal Article
Language:English
Published: Switzerland MDPI AG 13-12-2021
MDPI
Subjects:
Absorption
Adhesive bonding
Arrays
Bolometers
Circuits
Design
Efficiency
heterogeneous integration
Infrared imaging
Infrared radiation
micro-bolometer
Multi Quantum Wells
Performance evaluation
Pixels
Sensors
SiGe/Si MQWs
Silicon germanides
Silicon nitride
Simulation
Thermal bridges
Thermal conductivity
Time constant
SiGe/Si MQWs
heterogeneous integration
adhesive bonding
micro-bolometer
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Summary:The micro-bolometer is important in the field of infrared imaging, although improvements in its performance have been limited by traditional materials. SiGe/Si multi-quantum-well materials (SiGe/Si MQWs) are novelty thermal-sensitive materials with a significantly high TCR and a comparably low 1/f noise. The application of such high-performance monocrystalline films in a micro-bolometer has been limited by film integration technology. This paper reports a SiGe/Si MQWs micro-bolometer fabrication with heterogeneous integration. The integration with the SiGe/Si MQWs handle wafer and dummy read-out circuit wafer was achieved based on adhesive wafer bonding. The SiGe/Si MQWs infrared-absorption structure and thermal bridge were calculated and designed. The SiGe/Si MQWs wafer and a 320 × 240 micro-bolometer array of 40 µm pitch L-type pixels were fabricated. The test results for the average absorption efficiency were more than 90% at the wavelength of 8-14 µm. The test pixel was measured to have a thermal capacity of 1.043 × 10 J/K, a thermal conductivity of 1.645 × 10 W/K, and a thermal time constant of 7.25 ms. Furthermore, the total TCR value of the text pixel was measured as 2.91%/K with a bias voltage of 0.3 V. The SiGe/Si MQWs micro-bolometer can be widely applied in commercial fields, especially in early medical diagnosis and biological detection.
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ISSN:2072-666X
2072-666X
DOI:10.3390/mi12121553