Search Results - "Chen, Wangyong"

Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM by Sun, Qian, Chi, Yaqing, Guo, Yang, Liang, Bin, Tao, Ming, Wu, Zhenyu, Guo, Hongxia, Zheng, Qiwen, Chen, Wangyong, Gao, Yulin, Zhao, Peixiong, Li, Xingji, Chen, Jianjun, Luo, Deng, Sun, Hanhan, Fang, Yahao

“…This paper discusses the stuck bits induced by the gate breakdown of PMOS in the sub-20 nm FinFET static random access memory (SRAM) device. After the…”
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Multi-Physics Field Based Simulation on the Response and Saturation Properties of Hg1-xCdxTe Based Photovoltaic Detectors With Composition Gradients by Chen, Jiahui, Chen, Wangyong, Cai, Linlin, Chen, Haifeng, Yang, Pengling, Wang, Dahui, Shen, Manling, Li, Xiangyang, Qiao, Hui

“…In recent years, there has been a growing interest in photovoltaic detectors based on mercury cadmium telluride (Hg 1-x Cd x Te), owing to their exceptional…”
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Performance Optimization of Hg1-xCdxTe Photovoltaic Detectors Under Strong Illumination Considering Temperature and Wavelength Dependencies by Chen, Jiahui, Chen, Wangyong, Cai, Linlin, Yang, Pengling, Wang, Dahui, Shen, Manling, Li, Xiangyang, Qiao, Hui

“…Currently, HgCdTe detectors are advancing towards very long wavelengths and room temperature operation. However, as operating temperatures and illumination…”
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Machine Learning Assisted Device Modeling with Process Variations for Advanced Technology by Lyu, Yaoyang, Chen, Wangyong, Zheng, Mingyue, Yin, Binyu, Li, Jinning, Cai, Linlin

“…Process variations (PV), including global variation (GV) and local variation (LV), have become one of the major issues in advanced technologies, which is…”
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Investigation of degradation under arbitrary bias conditions in HfO2 based nanosheet nFETs by 3D kinetic Monte-Carlo method by Chen, Wangyong, Cai, Linlin, Li, Yun, Wang, Kunliang, Zhang, Xing, Liu, Xiaoyan, Du, Gang

“…A 3D kinetic Monte-Carlo simulator is developed to evaluate the degradation and time-dependent variability of the device subjected to arbitrary bias…”
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Electrothermal Small-Signal Model of Nanosheet FETs With Zero-Temperature-Coefficient Based Parameters Extraction Method by Lyu, Yaoyang, Chen, Wangyong, Cai, Linlin

“…Nanosheet FET (NSFET) is a promising structure for scaling transistors to the sub-5-nm node. However, the self-heating effect (SHE) impacts device performance…”
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Layout Design Correlated With Self-Heating Effect in Stacked Nanosheet Transistors by Cai, Linlin, Chen, Wangyong, Du, Gang, Zhang, Xing, Liu, Xiaoyan

“…With technology node scaling down to 5 nm, the narrow device geometry confines the material thermal conductivity and further aggravates the self-heating effect…”
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Change point detection in temporal networks based on graph snapshot similarity measures by Huang, Xianbin, Chen, Liming, Chen, Wangyong, Hu, Yao

“…This paper addresses the challenge of change point detection in temporal networks, a critical task across various domains, including life sciences and…”
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Insight Into Electromigration Reliability of Buried Power Rail With Alternative Metal Material by Cai, Linlin, Chen, Yutao, Zhang, Haoyu, Lin, Jianwen, Chen, Wangyong

“…As the technology node scales toward 1 nm, the emerging metal materials are being explored as the potential replacements for Cu interconnects. To better…”
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Determining the Zero-Temperature-Coefficient Point From Device Simulation to Circuit for Improving Temperature Variation Immunity by Chen, Wangyong, Zheng, Mingyue, Lyu, Yaoyang, Cai, Linlin

“…Thermal issue emerges as one of the critical reliability concerns in integrated circuit design, especially for advanced technology. To improve the temperature…”
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Self-Heating and Thermal Network Model for Complementary FET by Zhao, Songhan, Cai, Linlin, Chen, Wangyong, He, Yandong, Du, Gang

“…In this article, we investigate the self-heating effect (SHE) of the Complementary FET (CFET) device and propose a cross-coupled thermal network model. For the…”
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Thermal-Aware EM Reliability for Advanced Metal Interconnects of Complementary FET by Cai, Linlin, Zheng, Mingyue, Lyu, Yaoyang, Chen, Wangyong

“…Electromigration (EM) of metal interconnects is the continuous reliability concern for high-density integration beyond 5-nm technology, especially for the…”
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Exploring thermal effects of advanced backside power delivery network beyond 3 nm node by Zhang, Haoyu, Cai, Linlin, Chen, Haifeng, Yin, Binyu, Chen, Wangyong

“…Backside Power Delivery Networks (BSPDNs) address scaling issues by relocating power, boosting efficiency and density. However, thermal effects pose…”
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Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs by Chen, Wangyong, Cai, Linlin, Liu, Xiaoyan, Du, Gang

“…Independent back bias in the ultrathin body and Box (UTBB) fully depleted silicon-on-insulator (FDSOI) serves as the critical knob for exploiting the…”
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Layout based radiation hardening techniques against single-event transient by Liang, Bin, Luo, Deng, Sun, Qian, Chen, Wangyong

“…The single-event transient (SET) is regarded as one of the critical reliability issues for the soft errors in modern circuit designs, especially at the…”
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Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs by Liu, Liqiao, Chen, Wangyong, Liu, Xiaoyan, Du, Gang

“…This article presents an evaluation of the photoelectric characteristic of different structured ultrathin body and buried oxide (UTBB) MOSFETs. The UTBB…”
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Automatic Identification of Near Stationary Traffic States Using Changepoint Detection Method by Chen, Wangyong, Hu, Yao, Hu, Qian, Shen, Qi

“…Near stationary traffic states are of great significance for the calibration of the fundamental diagram and the quantification of capacity variation. In this…”
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Self-Adapting Power Density Sampling for On-Chip Thermal Prediction With Transistor-Level Granularity by Chen, Haifeng, Chen, Wangyong, Chen, Jiahui, Zhang, Haoyu, Cai, Linlin

“…With the rapid increase in chip scale, today's high-performance integrated circuits are facing increasingly complex thermal management challenges. It is often…”
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A hybrid machine learning approach for congestion prediction and warning by Li, Dongxue, Hu, Yao, Wu, Chuliang, Chen, Wangyong, Wang, Feiyun

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Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface by Zheng, Mingyue, Chen, Wangyong, Lyu, Yaoyang, Chen, Haifeng, Chen, Jiahui, Cai, Linlin

“…As technology nodes continue to shrink, the impact of aging problems on devices has become increasingly important. One significant aging problem that affects…”
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