Search Results - "Chen, Nuo Fu"

Metal-to-insulator transition in platinum group compounds by Xia, Yu-Xuan, He, Jian-Gang, Chen, Nuo-Fu, Chen, Ji-Kun

“…The metal-to-insulator transition (MIT) as usually achieved in 3d-orbital transitional metal (TM) compounds opens up a new paradigm in correlated electronics…”
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Batch synthesis of rare-earth nickelates electronic phase transition perovskites via rare-earth processing intermediates by Li, Xiao-Yu, Li, Zi-Ang, Yan, Feng-Bo, Zhang, Hao, Wang, Jia-Ou, Ke, Xin-You, Jiang, Yong, Chen, Nuo-Fu, Chen, Ji-Kun

“…The rare-earth nickelates (RENiO 3 ) exhibit an exceptional complex electronic phase diagram and multiple electronic phase transitions that enrich promising…”
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(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit by Song, Shu-Lin, Chen, Nuo-Fu, Zhou, Jian-Ping, Li, Yan-Li, Chai, Chun-Lin, Yang, Shao-Yan, Liu, Zhi-Kai

“…(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found…”
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Properties of high k gate dielectric gadolinium oxide deposited on Si (100) by dual ion beam deposition (DIBD) by Zhou, Jian-Ping, Chai, Chun-Lin, Yang, Shao-Yan, Liu, Zhi-Kai, Song, Shu-Lin, Li, Yan-Li, Chen, Nuo-Fu

“…Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an…”
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Anomalous temperature dependence of photoluminescence from stoichiometric GD2O3-x film by ZHOU, Jian-Ping, CHAI, Chun-Lin, YANG, Shao-Yan, LIU, Zhi-Kai, SONG, Shu-Lin, CHEN, Nuo-Fu

“…A stoichiometric Gd2O3-x thin film has been grown on a silicon (100) substrate with a low-energy dual ion-beam epitaxial technique. Gd7O3-x shares Gd2O3…”
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HETEROJUNCTION SILICON PHOTOCONVERTERS OBTAINED BY THE EVAPORATION METHOD IN A VACUUM by Olimov, Shoirbek, Nuo-fu, Chen, Kasimakhunova, A.M., Ali Shah, Syed Jawad, Yousaf, Khurram, Abbas, Numan, Quan-li, Tao, Xiu-Yu, Yang

“…This study focuses on manufacturing technology of heterojunction solar cells based on p-type silicon. The preparation of initial components, processes of…”
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Mn implanted GaAs by low energy ion beam deposition by Song, Shu-Lin, Chen, Nuo-Fu, Zhou, Jian-Ping, Yin, Zhi-Gang, Li, Yan-Li, Yang, Shao-Yan, Liu, Zhi-Kai

“…High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn–Ga binary particles by mass-analyzed dual ion beam…”
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Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates by Chen, Nuo Fu, Zhong, Xingru, Lin, Lanying, Zhang, Mian, Wang, Yunsheng, Bai, Xiwei, Zhao, Jing

“…Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated…”
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Fabrication of GdSi2 film by low-energy ion-beam implantation by LI, Yan-Li, CHEN, Nuo-Fu, ZHOU, Jian-Ping, SONG, Shu-Lin, YANG, Shao-Yan, LIU, Zhi-Kai

“…Single-phase gadolinium disilicide was fabricated by a low-energy ion-beam implantation technique. Auger electron spectroscopy and X-ray photoelectron…”
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GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique by ZHOU, Jian-Ping, CHEN, Nuo-Fu, ZHANG, Fu-Qiang, SONG, Shu-Lin, CHAI, Chun-Lin, YANG, Shao-Yan, LIU, Zhi-Kai, LIN, Lan-Ying

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Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer by Tao, Quanli, Chen, NuoFu, Wang, Congjie, Dayan, Ma, Bai, Yiming, Chen, Jikun

“…The highly crystallized Ge films have been fabricated by magnetron sputtering and thermal annealing on silicon substrate with a graphite buffer layer which can…”
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Effect of the oxygen concentration on the properties of Gd2O3 thin films by LI, Yan-Li, CHEN, Nuo-Fu, ZHOU, Jian-Ping, SONG, Shu-Lin, LIU, Li-Feng, YIN, Zhi-Gang, CAI, Chun-Lin

“…Gd2O3 thin films were deposited on Si (100) substrates at 650 C by a magnetron sputtering system under different Ar/O2 ratios of 6:1, 4:1 and 2:1. The effect…”
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Net-like ferromagnetic MnSb film deposited on porous silicon substrates by Dai, Ruixuan, Chen, NuoFu, Zhang, X.W., Peng, Changtao

“…MnSb films were deposited on porous silicon substrates by physical vapor deposition (PVD) technique. Modulation effects due to the substrate on microstructure…”
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InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy by FUBAO GAO, NUOFU CHEN, LEI LIU, ZHANG, X. W, JINLIANG WU, ZHIGANG YIN

“…The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with…”
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Analysis of leakage current in GaAs micro-solar cell arrays by Wang, YanShuo, Chen, NuoFu, Zhang, XingWang, Bai, YiMing, Wang, Yu, Huang, TianMao, Zhang, Han, Shi, HuiWei

“…The output characteristics of micro-solar cell arrays are analyzed on the basis of a modified model in which the shunt resistance between cell lines results in…”
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The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N by Zhang, Fuqiang, Chen, NuoFu, Liu, Xianglin, Liu, Zhikai, Yang, Shaoyan, Chai, Chunlin

“…Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al 2O 3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is…”
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Fabrication of GdSi 2 film by low-energy ion-beam implantation by Li, Yan-li, Chen, Nuo-fu, Zhou, Jian-ping, Song, Shu-lin, Yang, Shao-yan, Liu, Zhi-kai

“…Single-phase gadolinium disilicide was fabricated by a low-energy ion-beam implantation technique. Auger electron spectroscopy and X-ray photoelectron…”
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Anomalous temperature dependence of photoluminescence from stoichiometric GD 2O 3− x film by Zhou, Jian-Ping, Chai, Chun-Lin, Yang, Shao-Yan, Liu, Zhi-Kai, Song, Shu-Lin, Chen, Nuo-Fu

“…A stoichiometric Gd 2O 3− x thin film has been grown on a silicon (1 0 0) substrate with a low-energy dual ion-beam epitaxial technique. Gd 2O 3− x shares Gd…”
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MnSi ∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique by Yang, Junling, Chen, NuoFu, Liu, Zhikai, Yang, Shaoyan, Chai, Chunlin, Liao, Meiyong, He, Hongjia

“…Semiconducting manganese silicide, Mn 27Si 47 and Mn 15Si 26, were obtained using mass-analyzed low energy dual ion beam epitaxy technique. Auger electron…”
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Effects of point defects on lattice parameters of semiconductors by Chen, N, Wang, Y, He, H, Lin, L

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