Search Results - "Chen, Kevin Jing"

Adaptive Level-Shift Gate Driver with Indirect Gate Oxide Health Monitoring for Suppressing Crosstalk of SiC MOSFETs by Tang, Ho-Tin, Chung, Henry Shu-Hung, Chen, Kevin Jing

“…An adaptive level-shift gate driver with indirect gate oxide health monitoring for suppressing crosstalk of bridge-leg configured SiC MOSFETs is proposed. This…”
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Compact, Flexible, and Transparent Antennas Based on Embedded Metallic Mesh for Wearable Devices in 5G Wireless Network by Qiu, Haochuan, Liu, Houfang, Jia, Xiufeng, Jiang, Zhou-Ying, Liu, Yan-Hua, Xu, Jianlong, Lu, Tianqi, Shao, Minghao, Ren, Tian-Ling, Chen, Kevin Jing

“…Compact, transparent, and flexible 5G multiple-input multiple-output (MIMO) and millimeter wave (mmW) array antennas with Ni-based embedded metallic mesh (EMM)…”
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Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET by Hua, Mengyuan, Wei, Jin, Bao, Qilong, Zheng, Zheyang, Zhang, Zhaofu, He, Jiabei, Chen, Kevin Jing

“…Under reverse-bias stress (i.e., OFF-state stress with V GS <; V TH ) with high drain voltage, ultraviolet (UV) illumination and larger negative gate bias are…”
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Device Technology for GaN Mixed-Signal Integrated Circuits by Chen, Kevin Jing, Kwan, Alex Man Ho

“…A device technology platform for implementing GaN mixed-signal integrated circuits is presented. High-performance GaN enhancement-/depletion-mode (E/D-mode)…”
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Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation by Lu, Jun-Yong, Deng, Dong-Mei, Wang, Yong, Chen, Kevin Jing, Lau, Kei-May, Zhang, Tong-Yi

“…In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was…”
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AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process by Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Owen, Man Hon Samuel, Liu, Wei, Chi, Dong Zhi, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia

“…This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal--oxide--semiconductor high-electron-mobility transistors (MOS-HEMTs)…”
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Microwave Performance Dependence of BST Thin Film Planar Interdigitated Varactors on Different substrates by Jinwen Zhang, Hualiang Zhang, Kevin Jing Chen, Sheng Guo Lu, Zhankui Xu

“…This paper investigated the RF and microwave characterization dependence of BST (BaSrTiO 3 ) planar interdigitated (PID) varactors on different substrates,…”
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GaN smart power chip technology by Chen, K.J.

“…Wide-bandgap GaN-based semiconductor materials are attracting considerable attention as the preferred material for power electronics applications, owning to…”
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Fluorine plasma ion implantation technology: a new dimension in gan device processing by Chen, K.J.

“…The recent discovery of the potential and charge modulation by fluorine ions incorporated in III-nitride heterojunction FETs has opened up numerous new…”
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High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs) by Chen, K.J., Maezawa, K., Yamamoto, M.

“…High-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHEMT) are reported in this paper. Based…”
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