Search Results - "Chen, Kevin J."

GaN-on-Si Power Technology: Devices and Applications by Chen, Kevin J., Haberlen, Oliver, Lidow, Alex, Chun Lin Tsai, Ueda, Tetsuzo, Uemoto, Yasuhiro, Yifeng Wu

“…In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power…”
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Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment by Zhang, Zhaofu, Qian, Qingkai, Li, Baikui, Chen, Kevin J

“…Interface engineering is a key strategy to deal with the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure, since the properties of this…”
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An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration by Ruiliang Xie, Hanxing Wang, Gaofei Tang, Xu Yang, Chen, Kevin J.

“…Compared with the state-of-the-art Si-based power devices, enhancement-mode Gallium Nitride (E-mode GaN) transistors have better figures of merit and exhibit…”
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Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations by Hanxing Wang, Jin Wei, Ruiliang Xie, Cheng Liu, Gaofei Tang, Chen, Kevin J.

“…The systematic characterization of a 650-V/13-A enhancement-mode GaN power transistor with p-GaN gate is presented. Critical device parameters such as…”
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Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film by Sen Huang, Qimeng Jiang, Shu Yang, Chunhua Zhou, Chen, K. J.

“…An effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) is presented. This technique features an AlN thin film grown by…”
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Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy by Yang, Song, Huang, Sen, Wei, Jin, Zheng, Zheyang, Wang, Yuru, He, Jiabei, Chen, Kevin J.

“…In this work, the deep-level transient spectroscopy (DLTS) is conducted to investigate the gate stack of the <inline-formula> <tex-math notation="LaTeX">{p}…”
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Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride by Chen, Junting, Zhao, Junlei, Feng, Sirui, Zhang, Li, Cheng, Yan, Liao, Hang, Zheng, Zheyang, Chen, Xiaolong, Gao, Zhen, Chen, Kevin J., Hua, Mengyuan

“…Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability…”
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Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices by Chunhua Zhou, Qimeng Jiang, Sen Huang, Chen, K. J.

“…Vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by…”
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GaN power IC technology on p -GaN gate HEMT platform by Wei, Jin, Tang, Gaofei, Xie, Ruiliang, Chen, Kevin J.

“…GaN power ICs provide an elegant solution for high-frequency power switching applications. This paper will first discuss the GaN power integration platform,…”
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Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping by Maojun Wang, Chen, K J

“…Kink effects are studied in conventional AlGaN/GaN high-electron-mobility transistors by measuring their current-voltage characteristics with various bias…”
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Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications by Jin Wei, Huaping Jiang, Qimeng Jiang, Chen, Kevin J.

“…A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce…”
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Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal--Insulator--Semiconductor High-Electron Mobility Transistors by Huang, Sen, Yang, Shu, Roberts, John, Chen, Kevin J

“…The threshold voltage ($V_{\text{th}}$) instability in GaN-based metal--insulator--semiconductor high-electron mobility transistors (MIS-HEMTs) with 15-nm…”
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High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure by Sen Huang, Xinyu Liu, Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Qilong Bao, Ke Wei, Yingkui Zheng, Chao Zhao, Hongwei Gao, Qian Sun, Zhaofu Zhang, Chen, Kevin J.

“…Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal- insulator-semiconductor high-electron-mobility…”
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Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs by Zhikai Tang, Sen Huang, Xi Tang, Baikui Li, Chen, Kevin J.

“…We investigate in detail the influence of AlN passivation on dynamic ON-resistance (R ON ) and electric field (E-field) distribution in high-voltage AlGaN/GaN…”
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Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor by Wei, Jin, Liu, Shenghou, Li, Baikui, Tang, Xi, Lu, Yunyou, Liu, Cheng, Hua, Mengyuan, Zhang, Zhaofu, Tang, Gaofei, Chen, Kevin J.

“…A low on-resistance normally-off GaN double-channel metal-oxide-semiconductor high-electron-mobility transistor (DC-MOS-HEMT) is proposed and demonstrated in…”
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Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique by Maojun Wang, Chen, Kevin J

“…AlGaN/GaN high-electron mobility transistor's (HEMT's) off-state breakdown is investigated using drain-current injection techniques with different injection…”
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O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors by Huang, Sen, Liu, Xinyu, Wei, Ke, Liu, Guoguo, Wang, Xinhua, Sun, Bing, Yang, Xuelin, Shen, Bo, Liu, Cheng, Liu, Shenghou, Hua, Mengyuan, Yang, Shu, Chen, Kevin J.

“…High quality Al2O3 film grown by atomic layer deposition (ALD), with ozone (O3) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN…”
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Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode by Li, Baikui, Tang, Xi, Chen, Kevin J.

“…In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high…”
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Effectiveness of controlling COVID-19 epidemic by implementing soft lockdown policy and extensive community screening in Taiwan by Chan, Ta-Chien, Chou, Ching-Chi, Chu, Yi-Chi, Tang, Jia-Hong, Chen, Li-Chi, Lin, Hsien-Ho, Chen, Kevin J., Chen, Ran-Chou

“…Strict and repeated lockdowns have caused public fatigue regarding policy compliance and had a large impact on several countries’ economies. We aimed to…”
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Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement by Yang, Shu, Zhou, Chunhua, Jiang, Qimeng, Lu, Jianbiao, Huang, Baoling, Chen, Kevin J.

“…Thermally stimulated current (TSC) spectroscopy and high-voltage back-gating measurement are utilized to study GaN buffer traps specific to AlGaN/GaN lateral…”
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