Search Results - "Chen, C.E.C."

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    VB-1 characteristics of p-channel MOSFETs in LPCVD polysilicon and effect of grain boundary passivation on device performance

    VB-1 characteristics of p-channel MOSFETs in LPCVD polysilicon and effect of grain boundary passivation on device performance by Malhi, S.D.S., Shah, R.R., Chatterjee, P.K., Lam, H.W., Pinizzoto, R.F., Chen, C.E.C., Shichijo, H., Bellavance, D.W.

    Published in IEEE transactions on electron devices (01-11-1983)
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    p-Channel MOSFET's in LPCVD PolySilicon

    p-Channel MOSFET's in LPCVD PolySilicon by Malhi, S.D.S., Chatterjee, P.K., Pinizzotto, R.F., Lam, H.W., Chen, C.E.C., Shichijo, H., Shah, R.R., Bellavance, D.W.

    Published in IEEE electron device letters (01-10-1983)
    “…p-channel MOSFET's have been fabricated in LPCVD polysilicon. A 5000-Å n + poly acts as the gate electrode on which a 500-Å thermal oxide is grown to act as…”
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