Search Results - "Chelly, Avraham"

Broad review of four-point probe correction factors: Enhanced analytical model using advanced numerical and experimental cross-examination by Chelly, Avraham, Glass, Simcha, Belhassen, Jeremy, Karsenty, Avi

“…[Display omitted] •Extensive review of the four-point probe correction factors.•Improved analytical model based on numerical and experimental…”
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Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process by Karsenty, Avraham, Chelly, Avraham

“…Nanoscale Gate-Recessed Channel (GRC) Fully Depleted- (FD-) SOI MOSFET device with a silicon channel thickness (tSi) as low as 2.2 nm was first tested at room…”
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Review of Selected Quantum Measurements Applied to Embedded Quantum Well in Nanoscale Transistor by Belhassen, Jeremy, Chelly, Avraham

“…The fabrication of nanoelectronic and nanophotonic devices based on embedded quantum structures has become feasible over the last decades, and the field is…”
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Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs by Karsenty, Avraham, Chelly, Avraham

“…Ultrathin body (UTB) and nanoscale body (NSB) SOI MOSFET devices, having a channel thickness (tSI) ranging from 46 nm (UTB scale) down to 1.6 nm (NSB scale),…”
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Spatial-dependence cross-examination method of the Seebeck effect applied to Ge surface by Chelly, Avraham, Belhassen, Jeremy, Karsenty, Avi

“…[Display omitted] •Spatial-dependent Visualization Monitoring Method for Thermo-Electrical effects.•Cross-Examination of Analytical, Numerical and Experimental…”
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Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology by Abraham, Doron, Chelly, Avraham, Elbaz, David, Schiff, Shimron, Nabozny, Michah, Zalevsky, Zeev

“…An analytical model of the silicon on insulator photoactivated modulator (SOI-PAM) device is presented in order to describe the concept of this novel device in…”
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Seebeck coefficient’s comparative evaluation by cross-examination of time-dependent analytical model, numerical simulation and experimental measurement applied to germanium surface by Chelly, Avraham, Belhassen, Jeremy, Karsenty, Avi

“…[Display omitted] •Time-dependent Visualization Monitoring Method for Thermo-Electrical effects.•Seebeck Coefficient (SC) evaluation generic model, applied to…”
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Shrink effects on nanoscale MOS capacitor in visible and NIR spectral Ranges by Belhassen, Jeremy, Chelly, Avraham, Karsenty, Avi

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Nanoscale Silicon-on-Insulator Photo-Activated Modulator Building Block for Optical Communication by Zev, Ariel, Karsenty, Avi, Chelly, Avraham, Zalevsky, Zeev

“…The constantly growing use of real-time computing generates constant urge for much faster processors than those which are currently available in the market…”
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Advanced Surface Probing Using a Dual-Mode NSOM-AFM Silicon-Based Photosensor by Karelits, Matityahu, Lozitsky, Emanuel, Chelly, Avraham, Zalevsky, Zeev, Karsenty, Avi

“…A feasibility analysis is performed for the development and integration of a near-field scanning optical microscope (NSOM) tip-photodetector operating in the…”
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Zigzag-shaped nickel nanowires via organometallic template-free route by Shviro, Meital, Paszternák, András, Chelly, Avraham, Zitoun, David

“…In this manuscript, the formation of nickel nanowires of 10–20 nm in diameter (average size: several tens to hundreds of μm long and 1.0–1.5 μm wide) at low…”
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Influence of Ge nanocrystals and radiation defects on C–V characteristics in Si-MOS structures by Levy, Shai, Shlimak, Issai, Chelly, Avraham, Zalevsky, Zeev, Lu, Tiecheng

“…Metal–oxide-semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO2 layer were studied for their capacitance…”
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Fabrication of vertically positioned silicon on insulator photo-activated modulator by Abraham, Doron, Zalevsky, Zeev, Chelly, Avraham, Shappir, Joseph

“…In this paper we present the fabrication process and the experimental proof of principle of a vertical Silicon On Insulator Photo Activated Modulator (vertical…”
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Hybrid optical and electrical reconfigurable logic gates based on silicon on insulator technology by Abraham, Doron, Chelly, Avraham, Shappir, Joseph, Zalevsky, Zeev

“…In this paper we present the first measurements of optically reconfigurable and enabled logic gates based upon the original concept of Silicon-On-Insulator…”
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Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs by Karsenty, Avraham, Chelly, Avraham

“…The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel…”
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Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions by Karsenty, Avraham, Chelly, Avraham

“…The saturation regime of two types of fully depleted (FD) SOI MOSFET devices was studied. Ultrathin body (UTB) and gate recessed channel (GRC) devices were…”
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Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs by Karsenty, Avraham, Chelly, Avraham

“…Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm,…”
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Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs by Ciprut, A., Karsenty, Avraham, Chelly, Avraham

“…TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on…”
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Nanoscale thick FDSOI MOSFETs: A simple model of abnormal electrical behavior at low temperature by Karsenty, Avi, Chelly, Avraham

“…Two kinds of Fully Depleted Silicon-On-Insulator (FD-SOI) MOSFETs were electrically measured at 300K and at 77K and compared. Both the devices, Ultra-Thin Body…”
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Modeling and simulations of MOSQWell transistor future building block for optical communication by Bendayan, Michael, Karsenty, Avi, Chelly, Avraham

“…A new type of silicon MOSFET transistor, coupling both electronic and optical properties, is developed in order to overcome the indirect silicon bandgap…”
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