To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment

To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment

The electrical properties affected by the bottom oxide materials and the post-deposition treatment on the ultrathin (down to 1.6 nm) nitride/oxide (N/O) stacks, prepared by rapid thermal chemical vapor deposition (RTCVD) with two-step NH/sub 3//N/sub 2/O post-deposition annealing, for deep submicrom...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 48; no. 12; pp. 2769 - 2776
Main Authors: Chein-Hao Chen, Yean-Kuen Fang, Chih-Wei Yang, Shyh-Fann Ting, Yong-Shiuan Tsair, Ming-Fang Wang, Tuo-Hong Hou, Mo-Chiun Yu, Shih-Chang Chen, Jang, S.M., Yu, D.C.H., Mong-Song Liang
Format: Journal Article
Language:English
Published: New York IEEE 01-12-2001
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Annealing
Electrical properties
Leakage current
MOSFETs
Nitrides
Nitrous oxides
Oxides
Stacks
Voltage
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Summary:The electrical properties affected by the bottom oxide materials and the post-deposition treatment on the ultrathin (down to 1.6 nm) nitride/oxide (N/O) stacks, prepared by rapid thermal chemical vapor deposition (RTCVD) with two-step NH/sub 3//N/sub 2/O post-deposition annealing, for deep submicrometer dual-gate MOSFETs have been studied extensively. N/O stack with NO-grown bottom oxide exhibits fewer flat-band voltage shifts and higher hole and electron mobility, but suffers from worse leakage current than that with conventional O/sub 2/-grown bottom oxide. In post-deposition treatment, increasing NH/sub 3/ nitridation temperature can effectively reduce the equivalent oxide thickness (EOT) and improve leakage current reduction rate, but can result in worse mobility. Furthermore, the subsequent N/sub 2/O annealing eliminates the defects and offers a contrary effect on the N/O stack in comparison with the NH/sub 3/ nitridation step.
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.974702