Numerical Study of Low Gain Avalanche Detector Performance

Numerical Study of Low Gain Avalanche Detector Performance

In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multipl...

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Bibliographic Details
Published in:2018 International Conference on Communications and Electrical Engineering (ICCEE) pp. 1 - 5
Main Authors: Bendib, Toufik, Lakehal, Brahim, Kouda, Souhil, Abdi, Mohamed.Amir, Dendouga, Abedelghani, Chebaki, Elassad, Aouf, Anouar.Essadat, Meddour, Faycal, Barra, Samir
Format: Conference Proceeding
Language:English
Published: IEEE 01-12-2018
Subjects:
Boron
breakdown
Breakdown voltage
detector modeling
Detectors
Electric fields
gain
Implants
LGAD
noise
Numerical models
numerical simulation
Temperature dependence
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Summary:In this paper, we present a new ultra fast detector called Low Gain Avalanche Detector (LGAD) with low internal gain. The LGAD is fabricated with conventional APD technology with a modified doping profile, in the multiplication region, which affects the device performance such as: breakdown, multiplication gain and noise factor. For this reason, a numerical method based on Newton-Raphson calculation is proposed to estimate the electrostatic potential and electric field models of low gain avalanche detectors (LGADs) in order to investigate their performances. These models have been validated by their agreement with TCAD numerical simulation results. The effect of Boron doping profile, with different doses in the multiplication region, on the LGAD electrical performance is studied for various device structures in order to extend the device capability to its limit. In addition, LGAD devices are simulated for different temperature considering the effect of the temperature on the multiplication gain.
DOI:10.1109/CCEE.2018.8634532