Search Results - "Chawanda, A"

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range by Gora, V.E., Auret, F.D., Danga, H.T., Tunhuma, S.M, Nyamhere, C., Igumbor, E., Chawanda, A

“…•Impact of palladium silicidation on barrier height inhomogeneity.•No correlation between electrically active defects and barrier inhomogeneities.•Limitation…”
Get full text

Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide by Gora, V.E., Chawanda, A., Nyamhere, C., Auret, F.D., Mazunga, F., Jaure, T., Chibaya, B., Omotoso, E., Danga, H.T., Tunhuma, S.M.

“…We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC…”
Get full text

Analysis of temperature dependent I – V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant by Mtangi, W., Auret, F.D., Nyamhere, C., Janse van Rensburg, P.J., Chawanda, M. Diale, A.

“…Temperature dependent current–voltage ( I – V ) and Hall measurements were performed on Pd/ZnO Schottky barrier diodes in the range 20–300 K. The apparent…”
Get full text

Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range by Mtangi, W., van Rensburg, P.J. Janse, Diale, M., Auret, F.D., Nyamhere, C., Nel, J.M., Chawanda, A.

“…Current–voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60–320 K temperature range. The zero bias barrier height, ϕ bo and…”
Get full text

Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0) by Chawanda, A., Nyamhere, C., Auret, F.D., Mtangi, W., Diale, M., Nel, J.M.

“…Platinum (Pt) and titanium (Ti) Schottky barrier diodes were fabricated on bulk grown (1 0 0) Sb-doped n-type germanium using the electron beam whereas nickel…”
Get full text

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) by Chawanda, A., Coelho, S.M.M., Auret, F.D., Mtangi, W., Nyamhere, C., Nel, J.M., Diale, M.

“…► Ir/n-Ge (1 0 0) Schottky diodes were characterized using I– V, C– V and SEM techniques under various annealing conditions. ► The variation of the electrical…”
Get full text

The dependence of barrier height on temperature for Pd Schottky contacts on ZnO by Mtangi, W., Auret, F.D., Nyamhere, C., Janse van Rensburg, P.J., Chawanda, A., Diale, M., Nel, J.M., Meyer, W.E.

“…Temperature dependent current–voltage ( I– V) and capacitance–voltage ( C– V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range…”
Get full text

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO by Mtangi, W., Nel, J.M., Auret, F.D., Chawanda, A., Diale, M., Nyamhere, C.

“…We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors…”
Get full text

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements by Mtangi, W., Auret, F.D., Chawanda, A., Janse van Rensburg, P.J., Coelho, S.M.M., Nel, J.M., Diale, M., van Schalkwyk, L., Nyamhere, C.

“…► Highly rectifying Pd/ZnO contacts have been fabricated. ► The rectification behaviour decrease with annealing temperature. ► The surface donor concentration…”
Get full text

Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation by Nyamhere, C., Das, A.G.M., Auret, F.D., Chawanda, A., Pineda-Vargas, C.A., Venter, A.

“…Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons…”
Get full text

Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process by Chawanda, A., Nyamhere, C., Auret, F.D., Mtangi, W., Hlatshwayo, T.T., Diale, M., Nel, J.M.

“…Palladium (Pd) and cobalt (Co) Schottky barrier diodes were fabricated on n-Ge (1 0 0). The Pd-Schottky contacts were deposited by resistive evaporation while…”
Get full text

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1) by Chawanda, A., Roro, K.T., Auret, F.D., Mtangi, W., Nyamhere, C., Nel, J., Leach, L.

“…We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type…”
Get full text

A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS) by Nyamhere, Cloud, Auret, F.D., Das, A.G.M., Chawanda, A.

“…We have measured the electrical characteristics of electron irradiation-induced defects in n-type (1 1 0), (1 1 1) and (1 0 0) germanium doped with antimony…”
Get full text

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) by Nyamhere, C., Das, A.G.M., Auret, F.D., Chawanda, A., Mtangi, W., Odendaal, Q., Carr, A.

“…We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with…”
Get full text

Microstructural and surface characterization of thin gold films on n-Ge (1 1 1) by Nel, J.M., Chawanda, A., Auret, F.D., Jordaan, W., Odendaal, R.Q., Hayes, M., Coelho, S.

“…Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (1 1 1) wafers. The films were annealed between 300 and 600 °C. These resulting thin…”
Get full text

Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition by Nyamhere, Cloud, Chawanda, A., Das, A.G.M., Auret, F.D., Hayes, M.

“…When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon…”
Get full text

Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2MeV proton irradiation by Nyamhere, C., Das, A.G.M., Auret, F.D., Chawanda, A., Pineda-Vargas, C.A., Venter, A.

Get full text

Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide by Gora, V.E., Chawanda, A., Nyamhere, C., Auret, F.D., Mazunga, F., Jaure, T., Chibaya, B., Omotoso, E., Danga, H.T., Tunhuma, S.M.

Get full text

Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) by Nyamhere, C., Das, A.G.M., Auret, F.D., Chawanda, A., Mtangi, W., Odendaal, Q., Carr, A.

Get full text

A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS) by NYAMHERE, Cloud, AURET, F. D, DAS, A. G. M, CHAWANDA, A

Get full text