Search Results - "Chauveau, J. M"

Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions by Le Biavan, N., Hugues, M., Montes Bajo, M., Tamayo-Arriola, J., Jollivet, A., Lefebvre, D., Cordier, Y., Vinter, B., Julien, F.-H., Hierro, A., Chauveau, J.-M.

“…We have developed a method to grow and characterize the state of the art non-polar ZnO/(Zn,Mg)O multi-quantum wells on m-plane ZnO substrates as a prerequisite…”
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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells by Jollivet, A., Hinkov, B., Pirotta, S., Hoang, H., Derelle, S., Jaeck, J., Tchernycheva, M., Colombelli, R., Bousseksou, A., Hugues, M., Le Biavan, N., Tamayo-Arriola, J., Montes Bajo, M., Rigutti, L., Hierro, A., Strasser, G., Chauveau, J.-M., Julien, F. H.

“…This paper reports on the demonstration of quantum cascade detectors (QCDs) based on ZnO/ZnMgO quantum wells (QWs) grown by molecular beam epitaxy on an…”
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Use of interface phonon-polaritons for the alloy determination in ZnO/(Zn,Mg)O multiple quantum wells by Montes Bajo, M., Tamayo-Arriola, J., Le Biavan, N., Martínez Castellano, E., Lefebvre, D., Hugues, M., Chauveau, J.-M., Hierro, A.

“…[Display omitted] •ZnO/ZnMgO quantum wells are analyzed by polarized reflectance spectroscopy.•Sharp dips are observed in the spectra: interface phonon…”
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Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells by Tabares, G., Hierro, A., Vinter, B., Chauveau, J.-M.

“…Light polarization-sensitive UV photodetectors (PSPDs) using non-polar a-plane ZnMgO/ZnO multiple quantum wells grown both on sapphire and ZnO substrates have…”
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Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a -plane ZnO substrates by Chauveau, J.-M., Teisseire, M., Kim-Chauveau, H., Deparis, C., Morhain, C., Vinter, B.

“…We report on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells (QW) homoepitaxially grown by molecular beam epitaxy on a -plane ZnO substrates. We…”
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Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO by Neumann, M. D., Esser, N., Chauveau, J.-M., Goldhahn, R., Feneberg, M.

“…The anisotropic optical properties of wurtzite Mg x Zn1− x O thin films ( 0 ≤ x ≤ 0.45 ) grown on m-plane ZnO substrates by plasma assisted molecular beam…”
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Transport of indirect excitons in ZnO quantum wells by Kuznetsova, Y Y, Fedichkin, F, Andreakou, P, Calman, E V, Butov, L V, Lefebvre, P, Bretagnon, T, Guillet, T, Vladimirova, M, Morhain, C, Chauveau, J-M

“…We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells…”
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Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography by Di Russo, E, Moyon, F, Gogneau, N, Largeau, L, Giraud, E, Carlin, J.-F, Grandjean, N, Chauveau, J. M, Hugues, M, Blum, I, Lefebvre, W, Vurpillot, F, Blavette, D, Rigutti, L

“…Ternary semiconductor alloys based on the A y B1–y C stoichiometry are widely employed in electronic devices, and their composition plays a key role in band…”
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Residual and nitrogen doping of homoepitaxial nonpolar m -plane ZnO films grown by molecular beam epitaxy by Taïnoff, D., Al-Khalfioui, M., Deparis, C., Vinter, B., Teisseire, M., Morhain, C., Chauveau, J.-M.

“…We report the homoepitaxial growth by molecular beam epitaxy of high quality nonpolar m-plane ZnO and ZnO:N films over a large temperature range. The…”
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Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy by Xia, Y., Brault, J., Vennéguès, P., Nemoz, M., Teisseire, M., Leroux, M., Chauveau, J.-M.

“…Gallium nitride (GaN) epitaxial layers have been grown on O face (0001¯) zinc oxide (ZnO) substrates by ammonia source molecular beam epitaxy. By adjusting the…”
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Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy by Cordier, Y., Moreno, J.-C., Baron, N., Frayssinet, E., Chauveau, J.-M., Nemoz, M., Chenot, S., Damilano, B., Semond, F.

“…The growth of GaN based structures on Si(1 1 0) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural,…”
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Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates by Béaur, L., Bretagnon, T., Brimont, C., Guillet, T., Gil, B., Tainoff, D., Teisseire, M., Chauveau, J.-M.

“…We report growth of high quality ZnO / Zn 0.8 Mg 0.2 O quantum wells on M-plane oriented ZnO substrates. The optical properties are studied by reflectance…”
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Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells by Tabares, G., Hierro, A., Lopez-Ponce, M., Muñoz, E., Vinter, B., Chauveau, J.-M.

“…Homoepitaxial ZnO/(Zn,Mg)O multiple quantum wells (MQWs) grown with m- and r-plane orientations are used to demonstrate Schottky photodiodes sensitive to the…”
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The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates by KIM-CHAUVEAU, H, DE MIERRY, P, CHAUVEAU, J.-M, DUBOZ, J.-Y

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Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates by Chauveau, J.-M., Xia, Y., Ben Taazaet-Belgacem, I., Teisseire, M., Roland, B., Nemoz, M., Brault, J., Damilano, B., Leroux, M., Vinter, B.

“…We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (101¯2) R-plane ZnO substrates. We…”
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Residual strain in nonpolar a-plane Zn1−xMgxO (<x<0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells by Chauveau, J.-M., Vives, J., Zuniga-Perez, J., Laügt, M., Teisseire, M., Deparis, C., Morhain, C., Vinter, B.

“…We investigate the dependence on Mg content of the lattice parameters and the surface morphology of nonpolar a-(112¯0) Zn1−xMgxO (x≤0.55) grown by molecular…”
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Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy by Chauveau, J.-M., Buell, D.A., Laügt, M., Vennéguès, P., Teisseire-Doninelli, M., Berard-Bergery, S., Deparis, C., Lo, B., Vinter, B., Morhain, C.

“…Zinc oxide (ZnO) has recently attracted considerable attention because of its unique physical properties and its potential applications in the blue and UV…”
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Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes by KIM-CHAUVEAU, H, FRAYSSINET, E, CHARASH, R, VAJPEYI, A, LAMY, J.-M, AKHTER, M, MAASKANT, P. P, CORBETT, B, HANGLEITER, A, WIECK, A, DAMILANO, B, DE MIERRY, P, BODIOU, L, NGUYEN, L, VENNEGUES, P, CHAUVEAU, J.-M, CORDIER, Y, DUBOZ, J. Y

“…We present the growth optimization and the doping by the metal organic chemical vapor deposition of lattice-matched Al0.82In0.18N bottom optical confinement…”
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Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells by Chauveau, J.-M., Trampert, A., Ploog, K. H., Tournié, E.

“…By using transmission electron microscopy on as-grown and annealed GaInNAs/GaAs heterostructures, we demonstrate that annealing induces a correlated behavior…”
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Growth and characterization of A-plane ZnO and ZnCoO based heterostructures by Chauveau, J.-M., Morhain, C., Lo, B., Vinter, B., Vennéguès, P., Laügt, M., Buell, D., Tesseire-Doninelli, M., Neu, G.

“…Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the…”
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