Search Results - "Chauvat, M.P."

Epitaxial Growth of Sputtered Ultra-Thin NbN Layers and Junctions on Sapphire by Villegier, J.-C., Bouat, S., Cavalier, P., Setzu, R., Espiau de Lamaestre, R., Jorel, C., Odier, P., Guillet, B., Mechin, L., Chauvat, M.P., Ruterana, P.

“…High crystalline quality of ultra-thin NbN layers and of NbN-MgO-NbN tri-layers, epitaxially grown by DC-magnetron sputtering in the superconducting B1-cubic…”
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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer by Chauhan, Prerna, Hasenöhrl, S., Minj, A., Chauvat, M.P., Ruterana, P., Kuzmík, J.

“…[Display omitted] •This research provides understanding towards indium-incorporation in InAlN layer.•AlON interlayer formed due to the nitridation of sapphire…”
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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer by Chauhan, Prerna, Hasenöhrl, S., Minj, A., Chauvat, M.P., Ruterana, Pierre, Kuzmík, J.

“…InAlN as a functional inorganic material is a promising alternative to the commonly used InGaN in tunnel diodes and optoelectronic devices, due to its tunable…”
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Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures by Fialho, M., Magalhães, S., Rodrigues, J., Chauvat, M.P., Ruterana, P., Monteiro, T., Lorenz, K., Alves, E.

“…AlxGa1−xN (x = 0.20, 0.50, 0.63) films grown on (0001) sapphire substrates by metal organic chemical vapor phase deposition were implanted with Tb ions at…”
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P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600nm by Valdueza-Felip, S., Ajay, A., Redaelli, L., Chauvat, M.P., Ruterana, P., Cremel, T., Jiménez-Rodríguez, M., Kheng, K., Monroy, E.

“…We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1−xN homojunctions (x=0.10–0.40) synthesized by…”
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SrTiO3 surface micro-structuring with swift heavy ions in grazing incidence geometry by Rahali, R., Lebius, H., Benyagoub, A., Gardes, E., Guillous, S., Monnet, I., Sall, M., Chauvat, M.P., Marie, D., Grygiel, C.

“…In this work, we present first experimental results on the micro-structuration of monocrystalline strontium titanate (100)-SrTiO3. A self-organized structure…”
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P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm by Valdueza-Felip, S., Ajay, A., Redaelli, L., Chauvat, M.P., Ruterana, P., Cremel, T., Jiménez-Rodríguez, M., Kheng, K., Monroy, E.

“…We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x=0.10-.0.40) synthesized by…”
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The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells by CHERY, N., NGO, T.H., CHAUVAT, M.P., DAMILANO, B., COURVILLE, A., DE MIERRY, P., GRIEB, T., MEHRTENS, T., KRAUSE, F.F., MÜLLER‐CASPARY, K., SCHOWALTER, M., GIL, B., ROSENAUER, A., RUTERANA, P.

“…Summary In this work, we analyse the microstructure and local chemical composition of green‐emitting InxGa1–xN/GaN quantum well (QW) heterostructures in…”
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PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire by Lahourcade, L., Renard, J., Kandaswamy, P.K., Gayral, B., Chauvat, M.P., Ruterana, P., Monroy, E.

“…We report on the plasma-assisted molecular-beam epitaxial growth of (112¯2)-oriented GaN/AlN nanostructures on (11¯00) m-plane sapphire. Moderate N-rich…”
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