Search Results - "Charley, A. L."

Wafer-scale characterization for two-dimensional material layers by Moussa, A., Bogdanowicz, J., Groven, B., Morin, P., Beggiato, M., Saib, M., Santoro, G., Abramovitz, Y., Houchens, K., Ben Nissim, S., Meir, N., Hung, J., Urbanowicz, A., Koret, R., Turovets, I., Lee, B., Lee, W.T., Lorusso, G. F., Charley, A.-L.

“…Abstract Logic devices based on two-dimensional (2D) channel materials require highly crystalline monolayers. Despite various laboratory-scale metrology…”
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AFM characterization of anti-sticking layers used in nanoimprint by Tallal, J., Gordon, M., Berton, K., Charley, A.L., Peyrade, D.

“…Resist pull-off during mold-substrate separation is one of the major limiting factor for high resolution replication using nanoimprint lithography (NIL)…”
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Inspection and metrology challenges for 3 nm node devices and beyond by Shohjoh, T., Ikota, M., Isawa, M., Lorusso, G. F., Horiguchi, N., Briggs, B., Mertens, H., Bogdanowicz, J., De Bisschop, P., Charley, A.-L.

“…We report on non-destructive inspection and metrology potential of high-voltage (HV) critical dimension scanning electron microscopy (CD-SEM) for 3 nm node…”
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Three-Layer BEOL Process Integration with Supervia and Self-Aligned-Block Options for the 3 nm Node by Vega-Gonzalez, V., Bekaert, J., Kesters, E., Le, Q. T., Lorant, C., Varela P., O., Teugels, L., Heylen, N., El-Mekki, Z., van der Veen, M., Webers, T., Wilson, C. J., Vats, H., Rynders, L., Cupak, M., Uk-Lee, J., Drissi, Y., Halipre, L., Charley, A.-L., Verdonck, P., Witters, T., Gompel, S. V., Briggs, B., Kimura, Y., Jourdan, N., Ciofi, I., Gupta, A., Contino, A., Boccardi, G., Lariviere, S., Dupas, L., De-Wachter, B., Vancoille, E., Decoster, S., Lazzarino, F., Ercken, M, Debacker, P., Kim, R., Trivkovic, D., Croes, K., Leray, P., Dillemans, L., Chen, Y.-F., Tokei, Z., Versluijs, J., Lesniewska, A., Paolillo, S., Baert, R., Puliyalil, H.

“…The integration of a three-layer BEOL process which includes an intermediate 21 nm pitch level, relevant for the 3 nm technology node, is demonstrated. A full…”
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Supervia Process Integration and Reliability Compared to Stacked Vias Using Barrierless Ruthenium by Vega-Gonzalez, V., Puliyalil, H., Versluijs, J., Lesniewska, A., Varela-Pereira, O., Baert, R., Paolillo, S., Decoster, S., Schleicher, F., Montero, D., Bekaert, J., Kesters, E., Le, Q. T., Lorant, C., Teugels, L., Heylen, N., Jourdan, N., El-Mekki, Z., van der Veen, M., Ciofi, I., Briggs, B., Heijlen, J., Dupas, L., De-Wachter, B., Vancoille, E., Webers, T., Vats, H., Rynders, L., Cupak, M., Uk-Lee, J., Drissi, Y., Halipre, L., Charley, A.-L., Verdonck, P., Witters, T., Gompel, S. V., Kimura, Y., Demonie, I., Lazzarino, F., Ercken, M, Kim, R., Trivkovic, D., Croes, K., Leray, P., Jaysankar, M., Wilson, C., Muroch, G., Tokei, Z.

“…The integration of high-aspect-ratio (AR) supervias (SV) into a 3 nm node test vehicle, bypassing an intermediate 21 nm pitch layer, is demonstrated…”
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Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations by Vega-Gonzalez, V., Montero, D., Versluijs, J., Pedreira, O. Varela, Jourdan, N., Puliyalil, H., Chehab, B., Peissker, T., Haider, A., Batuk, D., Martinez, G. T., Geypen, J., Le, Q. T., Bazzazian, N., Heylen, N., van der Veen, M., El-Mekki, Z., Webers, T., Vats, H., Rynders, L., Cupak, M., Uk-Lee, J., Drissi, Y., Halipre, L., Gillijns, W., Charley, A.-L., Verdonck, P., Witters, T., Gompel, S. V., Kimura, Y., Ciofi, I., De Wachter, B., Swerts, J., Grieten, E., Ercken, M., Kim, R., Croes, K., Leray, P., Jaysankar, M., Nagesh, N., Ramakers, L., Murdoch, G., Park, S., Tokei, Z., Dentoni-Litta, E., Horiguchi, N.

“…The integration of high aspect-ratio (AR) vias or supervias (SV) with a min CD bottom = 10.5 nm and a max AR = 5.8 is demonstrated, allowing a comparison…”
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Imaging of Overlay and Alignment Markers Under Opaque Layers Using Picosecond Laser Acoustic Measurements : AM: Advanced Metrology by Mehendale, M., Antonelli, A., Mair, R., Mukundhan, P., Bogdanowicz, J., Charley, A.L., Leray, P., Yasin, F., Crotti, D.

“…Optically opaque materials present a series of challenges for alignment and overlay in the semi-damascene process flow or after the processing of the magnetic…”
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Characterization of Sub-micron Metal Line Arrays Using Picosecond Ultrasonics by Mehendale, M., Kotelyanskii, M., Mair, R., Mukundhan, P., Bogdanowicz, J., Teugels, L., Charley, A.L., Kuszewski, P.

“…Characterization of patterned nanostructures in modern nanoelectronic memory and logic devices using traditional optical critical dimension (OCD) metrology…”
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Hyper high numerical aperature achromatic interferometer for immersion lithography at 193 nm by Charley, A. L., Lagrange, A., Lartigue, O., Simon, J., Thony, P., Schiavone, P.

“…An apparatus for immersion interferometric lithography is described here where the interfering beams are created by illuminating a first diffraction grating…”
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New Concepts in Sample Controlled Thermal Analysis:  Resolution in the Time and Temperature Domains by Parkes, G. M. B, Barnes, P. A, Charsley, E. L

“…This paper describes the concepts of resolution in the time and temperature domains and illustrates the principles using two new sample controlled thermal…”
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Hyper high numerical aperature achromatic interferometerfor immersion lithography at 193 nm by Charley, A. L., Lagrange, A., Lartigue, O., Simon, J., Thony, P., Schiavone, P.

“…An apparatus for immersion interferometric lithography is described here where the interfering beams are created by illuminating a first diffraction grating…”
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