Effect of Base Width and Implantation Dose on Performance of 3-Terminal Magnetotransistor

This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (FL) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 termin...

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Bibliographic Details
Published in:	2007 International Symposium on Integrated Circuits pp. 41 - 44
Main Authors:	Woradet, J., Phetchakul, T., Chareankid, S., Pengchan, W., Klunngien, N., Hruanun, C., Poyai, A.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-09-2007
Subjects:	Boron Charge carrier processes Electron emission Lorentz covariance Magnetic circuits Magnetic devices Magnetic fields Magnetic sensors Microelectronics Packaging
Online Access:	Get full text
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Summary:	This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (FL) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 terminals, i.e., emitter, collector and base. The base width (L) is varied (10, 20 and 30 mum) where the spacing between collector and base is fixed at 40 mum. The emitter and collector regions are doped with boron (BF 2 ) at the dose of 3times10 15 , 5times10 15 and 1times10 16 ions/cm 2 . It is found that the sensitivity is increased when increasing L and the implantation dose. It is also demonstrated that the linear relationship between the output voltage of the magnetotransistor circuit and magnetic field can be obtained.
ISBN:	9781424407965 1424407966
ISSN:	2325-0631
DOI:	10.1109/ISICIR.2007.4441791