Search Results - "Changhwan Shin"

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching by Jo, Jaesung, Shin, Changhwan

“…We demonstrate a nearly hysteresis-free sub60-mV/decade subthreshold swing (SS) operation in a p-type bulk metal-oxide-semiconductor field-effect transistor…”
Get full text

Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V by Ko, Eunah, Lee, Jae Woo, Shin, Changhwan

“…In this letter, an n-type short-channel negative capacitance FinFET (NC-FinFET) with a hysteresis window of 0.48 V, an on-/off-current ratio of 10 7 , and a…”
Get full text

Recent Studies on Supercapacitors with Next-Generation Structures by Sung, Juho, Shin, Changhwan

“…Supercapacitors have shown great potential as a possible solution to the increasing global demand for next-generation energy storage systems. Charge…”
Get full text

Adjusting the Operating Voltage of an Nanoelectromechanical Relay Using Negative Capacitance by Choe, Kihun, Shin, Changhwan

“…The operating voltage of a nanoelectromechanical (NEM) relay can be scaled down significantly using negative capacitance (NC), which is a unique property of…”
Get full text

Impact of Equivalent Oxide Thickness on Threshold Voltage Variation Induced by Work-Function Variation in Multigate Devices by Lee, Youngtaek, Shin, Changhwan

“…Using 3-D technology computer aided design simulation, we investigated the impact of equivalent oxide thickness (EOT) on threshold voltage (VTH) variation…”
Get full text

Steep Slope Silicon-On-Insulator Feedback Field-Effect Transistor: Design and Performance Analysis by Lee, Changhoon, Ko, Eunah, Shin, Changhwan

“…Feedback field-effect transistor (FBFET), an alternative switching device, has received attention due to its ideal steep switching feature. By utilizing the…”
Get full text

Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices by Jo, Jaesung, Choi, Woo Young, Park, Jung-Dong, Shim, Jae Won, Yu, Hyun-Yong, Shin, Changhwan

“…Because of the “Boltzmann tyranny” (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal–oxide–semiconductor (MOS) devices is…”
Get full text

Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET by SHIN, Changhwan, XIN SUN, LIU, Tsu-Jae King

“…A study of random-dopant-fluctuation (RDF) effects on the trigate bulk MOSFET versus the planar bulk MOSFET is performed via atomistic 3D device simulation for…”
Get full text

Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers by Ko, Eunah, Lee, Hyunjae, Park, Jung-Dong, Shin, Changhwan

“…The effect of a triple metal-gate (TMG) on the performance and on the ambipolar current in a TMG vertical tunnel field-effect transistor with triple metal-gate…”
Get full text

3-D Quasi-Atomistic Model for Line Edge Roughness in Nonplanar MOSFETs by Oh, Sangheon, Shin, Changhwan

“…As the physical sizes of devices have been scaled down, the negative impact of process-induced random variation on device performance has increased; therefore,…”
Get full text

Current-Voltage Model for Negative Capacitance Field-Effect Transistors by Lee, Hyunjae, Yoon, Youngki, Shin, Changhwan

“…In this letter, a semi-analytical current-voltage model for a negative capacitance field-effect transistor (NCFET) with a ferroelectric material (i.e., BaTiO 3…”
Get full text

Study of High-k/Metal-Gate Work-Function Variation Using Rayleigh Distribution by NAM, Hyohyun, SHIN, Changhwan

“…By using a Monte Carlo simulation for the stochastic distribution of grain sizes, the work-function variation (WFV) in high-k/metal-gate (HK/MG) is…”
Get full text

Impact of Current Flow Shape in Tapered (Versus Rectangular) FinFET on Threshold Voltage Variation Induced by Work-Function Variation by Nam, Hyohyun, Shin, Changhwan

“…Depending on the real fin shape in a FinFET (i.e., rectangular versus tapered fin), the impact of the current flow shape in both rectangular and tapered…”
Get full text

Experimental observation of zero DIBL in short-channel hysteresis-free ferroelectric-gated FinFET by Shin, Jaemin, Shin, Changhwan

“…•Hysteresis-free & steep-switching ferroelectric-gated FinFET.•Negative DIBL effect in the ferroelectric-gated FinFET.•Zero DIBL is experimentally observed in…”
Get full text

Time-resolved electrical characteristics of ferroelectric-gated fully depleted silicon on insulator devices by Yoon, Chankeun, Shin, Changhwan

“…•Gate voltages with various sweep rates were applied to FDSOI device and ferroelectric-gated FDSOI devices.•Input transfer characteristics of baseline FDSOI is…”
Get full text

Impact of Interface Traps and Surface Roughness on the Device Performance of Stacked-Nanowire FETs by Park, Jinyoung, Shin, Changhwan

“…In stacked-nanowire field-effect transistors (stacked-NW FETs), the effect of nanowire surface roughness (NWSR) and random interface traps (RIT) on device…”
Get full text

Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications by Choi, Yejoo, Shin, Jaemin, Min, Jinhong, Moon, Seungjun, Chu, Daeyoung, Han, Donghwan, Shin, Changhwan

“…The effect of W and WO 3 electrodes on the ferroelectric characteristics of HZO (Zr-doped HfO 2 )-based MFM (metal-ferroelectric-metal) capacitors was…”
Get full text

Machine Learning (ML)-based model to characterize the line edge roughness (LER)-induced random variation in FinFET by Lim, Jaehyuk, Shin, Changhwan

“…ML (Machine Learning)-based artificial neural network (ANN) model is proposed to estimate the LER (line edge roughness)-induced performance variation in…”
Get full text

Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages by Lee, Dongwoo, Shin, Changhwan

“…Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and…”
Get full text

Improved remnant polarization of Zr-doped HfO2 ferroelectric film by CF4/O2 plasma passivation by Choi, Yejoo, Park, Hyeonjung, Han, Changwoo, Min, Jinhong, Shin, Changhwan

“…In this work, the impact of fluorine (CF 4 ) and oxygen (O 2 ) plasma passivation on HfZrO x (HZO) based ferroelectric capacitor was investigated. By the…”
Get full text