Search Results - "Changhua Cao"

A 50-GHz Phase-Locked Loop in 0.13- \mu m CMOS by Changhua Cao, Yanping Ding, O, K.K.

“…A 50-GHz charge pump phase-locked loop (PLL) utilizing an LC-oscillator-based injection-locked frequency divider (ILFD) was fabricated in 0.13-mum logic CMOS…”
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Millimeter-wave voltage-controlled oscillators in 0.13-μm CMOS technology by CHANGHUA CAO, O, Kenneth K

“…This paper describes the design of CMOS millimeter-wave voltage controlled oscillators. Varactor, transistor, and inductor designs are optimized to reduce the…”
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A 140-GHz fundamental mode voltage-controlled oscillator in 90-nm CMOS technology by Changhua Cao, O, K.K.

“…Fundamental mode voltage-controlled oscillators in F-band (90-140GHz) were fabricated using the UMC 90-nm logic CMOS process. The maximum operating frequencies…”
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Evaluation of supraspinatus muscle changes in the shoulder joint of stroke patients with hemiplegic and shoulder subluxation using ultrasonography: comparison between affected and unaffected sides by Liu, Shan, Cao, Changhua, Xie, Hualong, Huang, Qiuchen, Ge, Meng, Yin, Lu, Chen, Lei, Qu, Minghui, Huo, Ming, Onoda, Ko, Maruyama, Hitoshi

“…[Purpose] The shoulder joint has a very unstable structure yet a significantly wide range of motion. Weakness of the muscles around the shoulder joint may…”
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Progress and Challenges Towards Terahertz CMOS Integrated Circuits by Eunyoung Seok, Dongha Shim, Chuying Mao, Ruonan Han, Sankaran, Swaminathan, Changhua Cao, Knap, Wojciech, Kenneth, K O

“…Key components of systems operating at high millimeter wave and sub-millimeter wave/terahertz frequencies, a 140-GHz fundamental mode voltage controlled…”
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A power efficient 26-GHz 32:1 static frequency divider in 130-nm bulk CMOS by Changhua Cao, O, K.K.

“…A 32:1 static frequency divider consisting of five stages of 2:1 dividers using current mode logic (CML) was fabricated in a 130-nm bulk complementary…”
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A 24-GHz Transmitter With On-Chip Dipole Antenna in 0.13-μm CMOS by CHANGHUA CAO, YANPING DING, XIUGE YANG, LIN, Jau-Jr, WU, Hsin-Ta, VERMA, Ashok K, LIN, Jenshan, MARTIN, Frederick, O, Kenneth K

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Evaluation of supraspinatus muscle changes in the shoulder joint of stroke patients with hemiplegic and shoulder subluxation using ultrasonography : comparison between affected and unaffected sides by SHAN LIU, CHANGHUA CAO, HUALONG XIE, QIUCHEN HUANG, MENG GE, LU YIN, LEI CHEN, MINGHUI QU, MING HUO, KO ONODA, HITOSHI MARUYAMA

“…[Abstract.] [Purpose] The shoulder joint has a very unstable structure yet a significantly wide range of motion. Weakness of the muscles around the shoulder…”
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Multi-Level Amplitude Modulation of a 16.8-GHz Class-E Power Amplifier With Negative Resistance Enhanced Power Gain for 400-Mbps Data Transmission by Hsin-Ta Wu, Ruonan Han, Lerdsitsomboon, Wuttichai, Changhua Cao, Kenneth, K O

“…Multi-level modulation of a 16.8-GHz class-E power amplifier with negative resistance enhanced power gain is demonstrated in a 130-nm CMOS process. The circuit…”
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Millimeter-wave voltage-controlled oscillators in 0.13-/spl mu/m CMOS technology by Changhua Cao, O, K.K.

“…This paper describes the design of CMOS millimeter-wave voltage controlled oscillators. Varactor, transistor, and inductor designs are optimized to reduce the…”
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Towards terahertz operation of CMOS by Sankaran, S., Chuying Mao, Eunyoung Seok, Dongha Shim, Changhua Cao, Ruonan Han, Arenas, D.J., Tanner, D.B., Hill, S., Chih-Ming Hung, O, K.K.

“…This paper reports a new polysilicon gate separated Schottky barrier diode structure (PGS SBD) which enables operation of receivers at frequencies higher than…”
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A 50-GHz Phase-Locked Loop in 130-nm CMOS by Changhua Cao, Yanping Ding, O, K.K.

“…A 50-GHz charge pump phase locked loop (PLL) utilizing an LC-oscillator based injection locked divider is fabricated in a 130-nm logic CMOS process. The PLL…”
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An 18-GHz, 10.9-dBm fully-integrated power amplifier with 23.5% PAE in 130-nm CMOS by Changhua Cao, Haifeng Xu, Yu Su, O, K.K.

“…An 18-GHz fully integrated class-E power amplifier with 10.9-dBm saturated output power, and 23.5-% maximum PAE is fabricated in the UMC 130-nm digital CMOS…”
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A Fast Locking 5.8-7.2-GHz Fractional-N Synthesizer With Sub-2-us Settling in 22-nm FDSOI by Prinzie, Jeffrey, Andrabi, Shuja, Beghein, Christophe, Cao, Changhua, Chen, Hsinhua, Guo, Xiaochuan, Strange, Jon, Tenbroek, Bernard

“…This letter presents a fast frequency hopping all-digital fractional-N synthesizer with linear frequency tuning word estimation and aggressive type-I and…”
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A 410GHz CMOS Push-Push Oscillator with an On-Chip Patch Antenna by Seok, Eunyoung, Cao, Changhua, Shim, Dongha, Arenas, Daniel J., Tanner, David B., Hung, Chih-Ming, Kenneth, K. O

“…The uses of terahertz systems (300 GHz to 3 THz) in radars, remote sensing, advanced imaging, and bio-agent and chemical detection have been extensively…”
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Millimeter-wave voltage-controlled oscillators in 0.13-[micro]m CMOS technology by Cao, Changhua, K.K, O

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21.4 An LTE-A Multimode Multiband RF Transceiver with 4RX/2TX Inter-Band Carrier Aggregation, 2-Carrier 4×4 MIMO with 256QAM and HPUE Capability in 28nm CMOS by Tang, Chih-Chun, Lee, Yi-Bin, Sun, Chih-Hao Eric, Lin, Cheng-Chieh, Syu, Jin-Siang, Wu, Min-Hua, Chen, YangChuan, Chueh, Tzu-Chan, Bryant, Carl, Collados, Manel, Hassan, Mohammed, Ramos, Joao, Hsieh, Yu-Lin, Chen, Hsin-Hung, Guo, Xiaochuan, Chen, Hsinhua, Cao, Changhua, Li, Daniel, Strange, Jon, Wang, Caiyi, Dehng, Guang-Kaai

“…With the increasing popularity of social media, artificial intelligence (AI) and mobile computing, higher data-rate wireless communication is required. In the…”
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Millimeter-Wave CMOS Voltage-Controlled Oscillators by Changhua Cao, Eunyoung Seok, Kenneth, K.O.

“…The design of millimeter-wave CMOS voltage-controlled oscillators (VCOs) is reviewed. A low parasitic cross-coupled transistor layout is developed, and used to…”
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A 90-GHz voltage-controlled oscillator with a 2.2-GHz tuning range in a 130-nm CMOS technology by Changhua Cao, O, K.K.

“…A 90-GHz LC-resonator based voltage-controlled oscillator (VCO) is fabricated in a 130-nm foundry CMOS process. The core transistor structure has been…”
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2.5 A high-efficiency multiband Class-F power amplifier in 0.153µm bulk CMOS for WCDMA/LTE applications by Jenwei Ko, Xiaochuan Guo, Changhua Cao, Rajapandian, Saravanan, Solti Peng, Jing Li, Wenchang Lee, Baskaran, Narayanan, Caiyi Wang

“…Tthis class-F PA achieves the highest efficiency among the published CMOS PAs in Fig. 2.5.6 and closes the performance gap between CMOS and GaAs PAs,…”
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