Search Results - "Chang, Sil Yang"
-
1
Change of salivary stress marker concentrations during pregnancy: Maternal depressive status suppress changes of those levels
Published in The journal of obstetrics and gynaecology research (01-08-2011)“…Aim: The aim of the present study was to show changes in salivary cortisol and chromogranin A/protein concentrations as stress markers during pregnancy and to…”
Get full text
Journal Article -
2
The influence of carbon content in carbon-doped silicon oxide film by thermal treatment
Published in Thin solid films (01-07-2003)“…Carbon-doped silicon oxide (SiOC) low- k dielectric film was deposited on a p-type Si(100) substrate with mixture of bis-trimethylsilylmethane (BTMSM) and…”
Get full text
Journal Article Conference Proceeding -
3
Studies on the low dielectric SiOC(–H) thin films deposited using MTMS and oxygen as precursors by UV source assisted PECVD
Published in Surface & coatings technology (21-11-2005)“…Low- k SiOC(–H) films were deposited on a p-type Si(100) substrate using ultraviolet (UV) source assisted plasma-enhanced chemical vapor deposition with a…”
Get full text
Journal Article Conference Proceeding -
4
Effects of 4-hydroxy-2-nonenal, a major lipid peroxidation-derived aldehyde, and N-acetylcysteine on the cyclooxygenase-2 expression in human uterine myometrium
Published in Gynecologic and obstetric investigation (01-01-2011)“…Chorioamnionitis is one of the important causes of preterm labor. Preterm labor with chorioamnionitis is associated with oxidative stress. We reported that…”
Get more information
Journal Article -
5
Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor
Published in Thin solid films (26-05-2006)“…Carbon-doped silicon oxide (SiOC(-H)) films with low dielectric constant were deposited on a p-type Si(100) substrate using inductively coupled plasma chemical…”
Get full text
Journal Article -
6
The characteristics of dielectric properties of SiOC film with the variation of bonding angle on the Si-O-C structure
Published in The 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts (2003)“…Summary form only given, as follows. Carbon doped silicon oxide (SiOC) with low dielectric films were deposited on a p-type Si(100) substrate using a mixture…”
Get full text
Conference Proceeding
-
7
The characteristics of carbon-doped silicon oxide films with nano-pore structure deposited using UV-assisted PECVD
Published in Thin solid films (26-05-2006)“…SiOC(–H) films with low dielectric constant were deposited on p-type Si(100) substrate using ultraviolet (UV)-source assisted plasma-enhanced chemical vapor…”
Get full text
Journal Article -
8
The effect of the CH4 plasma treatment on deposited SiOC(–H) films with low dielectric constant prepared by using TMS/O2 PECVD
Published in Thin solid films (22-03-2005)“…The low dielectric SiOC(–H) films can be damaged by oxygen plasma during photoresist stripping. In this work, we have studied the CH4 plasma treatment to…”
Get full text
Journal Article -
9
The characteristics of carbon-doped silicon oxide films with nano-pore structure deposited using UV-assisted PECVD
Published in Thin solid films (2006)Get full text
Conference Proceeding -
10
Electrical Properties of Low-Dielectric-Constant SiOC(–H) Films Prepared by Plasma-Enhanced Chemical Vapor Deposition from Methyltriethoxysilane and O 2
Published in Japanese Journal of Applied Physics (01-10-2006)“…SiOC(–H) films were deposited on a p -type Si(100) substrate by plasma-enhanced chemical vapor deposition (PECVD) from methyltriethoxysilane (MTES) and oxygen…”
Get full text
Journal Article -
11
Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor
Published in Thin solid films (2006)Get full text
Conference Proceeding