Search Results - "Chang, Leland"
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An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches
Published in IEEE journal of solid-state circuits (01-04-2008)“…An eight-transistor (8T) cell is proposed to improve variability tolerance and low-voltage operation in high-speed SRAM caches. While the cell itself can be…”
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Journal Article Conference Proceeding -
2
Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs)
Published in IEEE transactions on very large scale integration (VLSI) systems (01-09-2013)“…The theoretical lower limit of subthreshold swing in mosfets (60 mV/decade) significantly restricts low-voltage operation since it results in a low ON -to- OFF…”
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3
POSTER: Design Space Exploration for Performance Optimization of Deep Neural Networks on Shared Memory Accelerators
Published in 2017 26th International Conference on Parallel Architectures and Compilation Techniques (PACT) (01-09-2017)“…The growing prominence and computational challenges imposed by Deep Neural Networks (DNNs) has fueled the design of specialized accelerator architectures and…”
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Conference Proceeding -
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Extremely scaled silicon nano-CMOS devices
Published in Proceedings of the IEEE (01-11-2003)“…Silicon-based CMOS technology can be scaled well into the nanometer regime. High-performance, planar, ultrathin-body devices fabricated on silicon-on-insulator…”
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CMOS circuit performance enhancement by surface orientation optimization
Published in IEEE transactions on electron devices (01-10-2004)“…With the advent of novel device structures that can be easily fabricated outside of the traditional (100) plane, it may be advantageous to change the crystal…”
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6
Sub-50 nm P-channel FinFET
Published in IEEE transactions on electron devices (01-05-2001)“…High-performance PMOSFETs with sub-50-nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel…”
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7
Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs
Published in IEEE transactions on electron devices (01-12-2002)“…The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum…”
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A 4R2W register file for a 2.3GHz wire-speed POWER™ processor with double-pumped write operation
Published in 2011 IEEE International Solid-State Circuits Conference (01-02-2011)“…In multi-ported register files, memory cell size grows quadratically with the total number of ports due to wordline and bitline wiring. Reducing the number of…”
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Conference Proceeding -
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FinFET scaling to 10 nm gate length
Published in Digest. International Electron Devices Meeting (2002)“…While the selection of new "backbone" device structure in the era of post-planar CMOS is open to a few candidates, FinFET and its variants show great potential…”
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Conference Proceeding -
10
Operational Amplifier Based Test Structure for Quantifying Transistor Threshold Voltage Variation
Published in IEEE transactions on semiconductor manufacturing (01-02-2009)“…A new test structure has been developed, which is comprised of MOSFET arrays and an on-chip operational amplifier feedback loop for measuring threshold voltage…”
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Journal Article -
11
Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational Systems
Published in IEEE transactions on electron devices (01-01-2013)“…The goal of neuromorphic engineering is to build electronic systems that mimic the ability of the brain to perform fuzzy, fault-tolerant, and stochastic…”
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12
Efficient AI System Design With Cross-Layer Approximate Computing
Published in Proceedings of the IEEE (01-12-2020)“…Advances in deep neural networks (DNNs) and the availability of massive real-world data have enabled superhuman levels of accuracy on many AI tasks and ushered…”
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13
BiScaled-DNN: Quantizing Long-tailed Datastructures with Two Scale Factors for Deep Neural Networks
Published in 2019 56th ACM/IEEE Design Automation Conference (DAC) (01-06-2019)“…Fixed-point implementations (FxP) are prominently used to realize Deep Neural Networks (DNNs) efficiently on energy-constrained platforms. The choice of…”
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Conference Proceeding -
14
Operational amplifier based test structure for transistor threshold voltage variation
Published in 2008 IEEE International Conference on Microelectronic Test Structures (01-03-2008)“…A new test structure has been developed, which is comprised of MOSFET arrays and an on-chip operational amplifier feedback loop for measuring threshold voltage…”
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Conference Proceeding -
15
A 7-nm Four-Core Mixed-Precision AI Chip With 26.2-TFLOPS Hybrid-FP8 Training, 104.9-TOPS INT4 Inference, and Workload-Aware Throttling
Published in IEEE journal of solid-state circuits (01-01-2022)“…Reduced precision computation is a key enabling factor for energy-efficient acceleration of deep learning (DL) applications. This article presents a 7-nm…”
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Power-Limited Inference Performance Optimization Using a Software-Assisted Peak Current Regulation Scheme in a 5-nm AI SoC
Published in IEEE journal of solid-state circuits (18-10-2024)“…Discrete AI inference cards, operating under form-factor and system-defined peak power constraints, must serve diverse inference requests with widely varying…”
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17
Moore's law lives on [CMOS transistors]
Published in IEEE circuits and devices magazine (01-01-2003)“…We discuss several device structures suitable for scaling CMOS devices well into the nano-CMOS era, perhaps down below 10 nm physical gate length. The…”
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Journal Article -
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A Low Ripple Switched-Capacitor Voltage Regulator Using Flying Capacitance Dithering
Published in IEEE journal of solid-state circuits (01-04-2016)“…In this work, a switched-capacitor voltage regulator (SCVR) that dithers flying capacitance to reduce output voltage ripple is presented, and the benefits of…”
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DeepTools: Compiler and Execution Runtime Extensions for RaPiD AI Accelerator
Published in IEEE MICRO (01-09-2019)“…The ubiquitous adoption of systems specialized for AI requires bridging two seemingly conflicting challenges—the need to deliver extreme processing…”
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A 512kb 8T SRAM Macro Operating Down to 0.57V With an AC-Coupled Sense Amplifier and Embedded Data-Retention-Voltage Sensor in 45nm SOI CMOS
Published in IEEE journal of solid-state circuits (01-01-2011)“…An 8T SRAM fabricated in 45 nm SOI CMOS exhibits voltage scalable operation from 1.2 V down to 0.57 V with access times from 400 ps to 3.4 ns. Timing variation…”
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