Search Results - "Chandrasekaran, J"
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Fabrication of Cu/Y-MoO3/p-Si type Schottky barrier diodes by facile spray pyrolysis technique for photodetection application
Published in Sensors and actuators. A. Physical. (01-03-2022)“…The metal-semiconductor interface is a regular multitudinous photoelectric device like Schottky barrier diodes (SBDs) applications. Here we have designed a…”
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Fabrication of WO3 nanorods/RGO hybrid nanostructures for enhanced visible-light-driven photocatalytic degradation of Ciprofloxacin and Rhodamine B in an ecosystem
Published in Journal of alloys and compounds (05-07-2021)“…•A novel RGO/WO3-nanohybrids were synthesized by a facile hydrothermal method.•The bandgap was found to be reduced from 2.80 to 2.32 eV with the incorporation…”
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Fabrication of Illumination-Dependent Cu/p-Si Schottky Barrier Diodes by Sandwiching MoO3 Nanoplates as an Interfacial Layer via JNSP Technique
Published in Journal of electronic materials (01-07-2020)“…Highly oriented ultrathin MoO 3 nanoplate thin films have been synthesized on a large scale using a low-cost spray pyrolysis technique at different substrate…”
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Incorporation of Zn ions on high dielectric HfO2 thin films by spray pyrolysis and fabrication of Al/Zn@HfO2/n-Si Schottky barrier diodes
Published in Sensors and actuators. A. Physical. (01-11-2021)“…[Display omitted] •A nanostructured Zn@HfO2 thin films were through the JNSP technique.•The mesoporous with irregular balls intact nanorods-like structured…”
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Synthesis and characterization of ruthenium-doped CdO nanoparticle and its n-RuCdO/p-Si junction diode application
Published in Journal of alloys and compounds (30-03-2019)“…In the present work, Ru doped CdO nanoparticles were prepared with different doping concentrations by microwave irradiation technique for P-N junction diode…”
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Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure
Published in Sensors and actuators. A. Physical. (01-11-2020)“…[Display omitted] •Highly sensitive MIS type Schottky diode where fabricated with various concentration of Ce.•Incorporation of Ce ions effectively reduce the…”
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Long-lasting stability and low-concentration SO2 gas detection aptitude of Sn-doped alumina sensors
Published in Materials chemistry and physics (15-11-2022)“…The Sn-doping effect on the SO2 gas sensing properties has been investigated by a resistance-based measurement method. During structural analysis, the undoped…”
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Design of zinc vanadate (Zn3V2O8)/nitrogen doped multiwall carbon nanotubes (N-MWCNT) towards supercapacitor electrode applications
Published in Journal of electroanalytical chemistry (Lausanne, Switzerland) (15-01-2021)“…An electrochemically active composite material consisting of zinc vanadate (Zn3V2O8) and nitrogen doped multi wall carbon nanotubes (N-MWNCT) was prepared…”
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The deep investigation of structural and opto-electrical properties of Yb2O3 thin films and fabrication of Al/Yb2O3/p-Si (MIS) Schottky barrier diode
Published in Journal of sol-gel science and technology (01-06-2022)“…The present research explores the fabrication of a metal insulator semiconductor Schottky barrier diode (SBD) with rare earth metal oxide (Yb 2 O 3 ) thin…”
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10
Wick type solar stills: A review
Published in Renewable & sustainable energy reviews (01-04-2013)“…Solar distillation is one of the water purification techniques that produce ultrapure water which is superior to most of the commercial bottled water sources…”
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Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes
Published in Journal of materials science. Materials in electronics (01-02-2018)“…Metal–insulator–semiconductor (MIS) structure of Cu/Zr–WO x /p-Si Schottky diodes with different concentrations (0, 4 and 8 wt%) of Zr content were fabricated…”
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Impact of annealing treatment on structural and dc electrical properties of spin coated tungsten trioxide thin films for Si/WO3/Ag junction diode
Published in Materials science in semiconductor processing (01-12-2016)“…We report on the effect of the thermal annealing on structural and electrical properties of p-Si/n-WO3/Ag junction diode. According to the XRD pattern, the WO3…”
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Influence of high dielectric HfO2 thin films on the electrical properties of Al/HfO2/n-Si (MIS) structured Schottky barrier diodes
Published in Physica. B, Condensed matter (01-10-2020)“…The presence of high dielectric material between the metal and semiconductor interface played a significant role in many electronic device applications. In…”
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14
Experimental and quantum chemical studies on SHG, Z-scan and optical limiting investigation of 2-amino-5-bromopyridinium trifluoroacetate single crystal for optoelectronic applications
Published in The Journal of physics and chemistry of solids (01-01-2020)“…The 2-amino-5-bromopyridinium trifluoroacetate (2A5BPTFA) crystal has been successfully grown by solvent slow evaporation technique. The grown crystal is found…”
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Impact of Annealing Temperature on Spin Coated V2O5 Thin Films as Interfacial Layer in Cu/V2O5/n-Si Structured Schottky Barrier Diodes
Published in Journal of inorganic and organometallic polymers and materials (01-09-2019)“…In this paper, we report the influence of thermal annealing on structural, electrical properties V 2 O 5 thin films and their application of SBD’s. V 2 O 5…”
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Structural, optical and electrical properties of Ru doped MoO3 thin films and its P–N diode application by JNS pyrolysis technique
Published in Journal of materials science. Materials in electronics (01-11-2016)“…We report that the jet nebulizer spray coating is a promising route to acquire ruthenium doped molybdenum trioxide (RuMoO 3 ) thin films for the P–N diode…”
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MoO3 overview: hexagonal plate-like MoO3 nanoparticles prepared by precipitation method
Published in Journal of materials science. Materials in electronics (01-04-2018)“…MoO 3 nanoparticles are synthesized by precipitation method. The optical, structure and morphology of MoO 3 nanoparticles are investigated by UV–Visible…”
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Fabrication of ON/OFF switching response based on n-Ni-doped MoO3/p-Si junction diodes using Ni-MoO3 thin films as n-type layer prepared by JNS pyrolysis technique
Published in Applied physics. A, Materials science & processing (01-03-2020)“…The influence of nickel (Ni) doping concentrations on structural, optical, electrical and diode properties of molybdenum trioxide (MoO 3 ) thin films has been…”
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Synthesis, characterization and gas sensing performance of V2O5 nano-structure on PET substrate
Published in Journal of materials science. Materials in electronics (01-02-2019)“…VO 2 micro rods and V 2 O 5 nano rod (NR) were fabricated through wet chemical method by changing annealing temperature. The influence of annealing-induced on…”
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Structural, optical, thermal, mechanical, dielectric and laser damage threshold studies of a succinate salt of creatinine for nonlinear optical applications
Published in Materials letters (15-12-2016)“…In this work, the structural, optical, mechanical, dielectric, thermal and laser-induced damage threshold (LDT) studies of a promising organic NLO material…”
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