Search Results - "Chand, Nisarga"

Exploring the applications and security threats of Internet of Thing in the cloud computing paradigm: A comprehensive study on the cloud of things by Nag, Anindya, Hassan, Md. Mehedi, Das, Ayontika, Sinha, Anurag, Chand, Nisarga, Kar, Anwesha, Sharma, Vandana, Alkhayyat, Ahmed

“…The term “Internet of Things” (IoT) represents a vast interconnected network comprising ordinary objects enhanced with electronics like sensors, actuators, and…”
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Synergy of 6G technology and IoT networks for transformative applications by Das, Moupriya, Nag, Anindya, Hassan, Md. Mehedi, Santra, Arkya, Chand, Nisarga, Yasmin, Farhana, Sinha, Anurag, Bairagi, Anupam Kumar, Alkhayyat, Ahmed

“…Summary The rapid growth of Wi‐Fi networking and intelligent systems, fueled by the emergence of the Internet of Things (IoT), has enabled significant…”
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Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier by Chand, Nisarga, Adak, Sarosij, Swain, S.K., Biswal, Sudhansu Mohan, Sarkar, A.

“…•DC and SCEs performances are investigated for enhancement-mode HEMT with variation of AlGaN back barrier thickness.•2D Sentaurus TCAD hydrodynamic simulation…”
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A Review of Machine Learning Methods for IoT Network-Centric Anomaly Detection by Nag, Anindya, Hassan, Md. Mehedi, Mandal, Dishari, Chand, Nisarga, Islam, Md Babul, Meena, V. P., Benedetto, Francesco

“…Anomaly detection in IoT infrastructure is a growing idea in the IoT area. The IoT enables the linking of many devices through the use of wireless and mobile…”
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Comparative study on Analog & RF Parameter of InAlN/AlN/GaN Normally off HEMTs with and without AlGaN Back Barrier by Chand, Nisarga, Swain, Sanjit Kumar, Biswal, Sudhansu Mohan, Sarkar, Angsuman, Adak, Sarosij

“…In this work, we have made a relative assessment of lattice-matched In 0.17 Al 0.83 N/AlN/GaN normally off HEMT device with AlGaN back-barrier (BB) and without…”
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Effect of AlGaN Back Barrier on InAlN/AlN/GaN E-Mode HEMTs by Adak, Sarosij, Chand, Nisarga, Swain, Sanjit Kumar, Sarkar, Angsuman

“…This paper reports the effect of AlGaN back barrier on the performance of lattice matched In 0.17 Al 0.83 N/AlN/GaN Recess Gate E HEMT Device. The use of AlGaN…”
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Analysis of Different Characteristics of SOI-TFET with Ge Material as Source Pocket by Sinha, Sanjeet Kumar, Tripathi, Suman Lata, Chatterjee, Goutam, Chand, Nisarga

“…For high performance device application SGOI is a better alternative to Si substrate because of its much attractive property. TFET has been proposed as…”
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