Search Results - "Chan, Bor"

Synthesis and properties of thio-containing poly(ether ether ketone)s by Wang, Yen-Zen, Lin, Chih-Hung, Chan, Bor-Wen, Hsieh, Kuo-Huang

“…A series of thio‐containing poly(ether ether ketone) (PEESK) polymers was synthesized by the introduction of thio groups from 4,4′ thiodiphenol (TDP) into the…”
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Towards real-time simulation of cardiac electrophysiology in a human heart at high resolution by Richards, David F., Glosli, James N., Draeger, Erik W., Mirin, Arthur A., Chan, Bor, Fattebert, Jean-luc, Krauss, William D., Oppelstrup, Tomas, Butler, Chris J., Gunnels, John A., Gurev, Viatcheslav, Kim, Changhoan, Magerlein, John, Reumann, Matthias, Wen, Hui-Fang, Rice, John Jeremy

“…We have developed the capability to rapidly simulate cardiac electrophysiological phenomena in a human heart discretised at a resolution comparable with the…”
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BlueGene/L applications: Parallelism On a Massive Scale by de Supinski, Bronis R., Schulz, Martin, Bulatov, Vasily V., Cabot, William, Chan, Bor, Cook, Andrew W., Draeger, Erik W., Glosli, James N., Greenough, Jeffrey A., Henderson, Keith, Kubota, Alison, Louis, Steve, Miller, Brian J., Patel, Mehul V., Spelce, Thomas E., Streitz, Frederick H., Williams, Peter L., Yates, Robert K., Yoo, Andy, Almasi, George, Bhanot, Gyan, Gara, Alan, Gunnels, John A., Gupta, Manish, Moreira, Jose, Sexton, James, Walkup, Bob, Archer, Charles, Gygi, Francois, Germann, Timothy C., Kadau, Kai, Lomdahl, Peter S., Rendleman, Charles, Welcome, Michael L., McLendon, William, Hendrickson, Bruce, Franchetti, Franz, Kral, Stefan, Lorenz, Jürgen, Überhuber, Christoph W., Chow, Edmond, Çatalyürek, Ümit

“…BlueGene/L (BG/L), developed through a partnership between IBM and Lawrence Livermore National Laboratory (LLNL), is currently the world's largest system both…”
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Plasma induced substrate damage in high dose implant resist strip process by Bor-Wen Chan, Baw-Ching Perng, Sheu, L., Yuan-Hung Chiu, Han-Jan Tao

“…In this communication we report our work on the ashing of post high dosage implant photoresist removal. Attention is focused on plasma damage to the silicon…”
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Notch elimination in polycide gate stack etching for advanced DRAM technology by Bor-Wen Chan, Min-hwa Chi, Liou, Y.H.

“…The notch phenomenon in etching of complex TEOS/oxynitride/WSi/sub x//poly DRAM gate stacks is eliminated by adding N/sub 2/ gas in the poly over-etch (OE)…”
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Toward real-time modeling of human heart ventricles at cellular resolution: Simulation of drug-induced arrhythmias by Mirin, A. A., Richards, D. F., Glosli, J. N., Draeger, E. W., Chan, B., Fattebert, J., Krauss, W. D., Oppelstrup, T., Rice, J. J., Gunnels, J. A., Gurev, V., Changhoan Kim, Magerlein, J., Reumann, M., Hui-Fang Wen

“…We have developed a highly efficient and scalable cardiac electrophysiology simulation capability that supports groundbreaking resolution and detail to…”
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Unlocking the Performance of the BlueGene/L Supercomputer by Almasi, George, Chatterjee, Siddhartha, Gara, Alan, Gunnels, John, Gupta, Manish, Henning, Amy, Moreira, Jose E., Walkup, Bob

“…The BlueGene/L supercomputer is expected to deliver new levels of application performance by providing a combination of good single-node computational…”
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5nm-gate nanowire FinFET by Fu-Liang Yang, Di-Hong Lee, Hou-Yu Chen, Chang-Yun Chang, Sheng-Da Liu, Cheng-Chuan Huang, Tang-Xuan Chung, Hung-Wei Chen, Chien-Chao Huang, Yi-Hsuan Liu, Chung-Cheng Wu, Chi-Chun Chen, Shih-Chang Chen, Ying-Tsung Chen, Ying-Ho Chen, Chih-Jian Chen, Bor-Wen Chan, Peng-Fu Hsu, Jyu-Horng Shieh, Han-Jan Tao, Yee-Chia Yeo, Yiming Li, Jam-Wem Lee, Pu Chen, Mong-Song Liang, Chenming Hu

“…A new nanowire FinFET structure is developed for CMOS device scaling into the sub-10 nm regime. Accumulation mode P-FET and inversion mode N-FET with 5 nm and…”
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5nm-Gate nanowire FinFET by YANG, Fu-Liang, LEE, Di-Hong, WU, Chung-Cheng, CHEN, Chi-Chun, CHEN, Shih-Chang, CHEN, Ying-Tsung, CHEN, Ying-Ho, CHEN, Chih-Jian, CHAN, Bor-Wen, HSU, Peng-Fu, SHIEH, Jyu-Homg, TAO, Han-Jan, CHEN, Hou-Yu, YEO, Yee-Chia, YIMING LI, LEE, Jam-Wem, PU CHEN, LIANG, Mong-Song, CHENMING HU, CHANG, Chang-Yun, LIU, Sheng-Da, HUANG, Cheng-Chuan, CHUNG, Tang-Xuan, CHEN, Hung-Wei, HUANG, Chien-Chao, LIU, Yi-Hsuan

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45nm node planar-SOI technology with 0.296μm2 6T-SRAM cell by YANG, Fu-Liang, HUANG, Cheng-Chuan, WEN, Cheng-Kuo, CHENG, Shui-Ming, YANG, Chang-Ta, KUNG, Li-Wei, LEE, Chiu-Lien, CHOU, Yu-Jun, LIANG, Fu-Jye, SHIU, Lin-Hung, YOU, Jan-Wen, SHU, King-Chang, HUANG, Chien-Chao, CHANG, Bin-Chang, SHIN, Jaw-Jung, CHEN, Chun-Kuang, GAU, Tsai-Sheng, WANG, Ping-Wei, CHAN, Bor-Wen, HSU, Peng-Fu, SHIEH, Jyu-Horng, FUNG, Samuel K.-H, DIAZ, Carlos H, CHUNG, Tang-Xuan, WU, Chii-Ming M, SEE, Yee-Chaung, LIN, Burn J, LIANG, Mong-Song, SUN, Jack Y.-C, CHENMING HU, CHEN, Hou-Yu, CHANG, Chang-Yun, CHEN, Hung-Wei, LEE, Di-Hong, LIU, Sheng-Da, CHEN, Kuang-Hsin

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Elimination of notch during gate polycide stack etching by adding nitrogen in over etch step by Bor-Wen Chan, Liou, Y.H., Min-Hwa Chi

“…In this paper, the notch phenomenon in sub-quarter-micron DRAM polycide gate etching process is an important issue and is improved by adding N/sub 2/ gas in…”
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45nm node planar-SOI technology with 0.296 /spl mu/m/sup 2/ 6T-SRAM cell by Fu-Liang Yang, Cheng-Chuan Huang, Chien-Chao Huang, Tang-Xuan Chung, Hou-Yu Chen, Chang-Yun Chang, Hung-Wei Chen, Di-Hong Lee, Sheng-Da Liu, Kuang-Hsin Chen, Cheng-Kuo Wen, Shui-Ming Cheng, Chang-Ta Yang, Li-Wei Kung, Chiu-Lien Lee, Yu-Jun Chou, Fu-Jye Liang, Lin-Hung Shiu, Jan-Wen You, King-Chang Shu, Bin-Chang Chang, Jaw-Jung Shin, Chun-Kuang Chen, Tsai-Sheng Gau, Ping-Wei Wang, Bor-Wen Chan, Peng-Fu Hsu, Jyu-Honig Shieh, Fung, S.K.-H., Diaz, C.H., Wu, C.-M.M., Yee-Chaung See, Lin, B.J., Liang, M.-S., Sun, J.Y.-C., Chenming Hu

“…The first 45nm node planar-SOI technology has been developed with 6T-SRAM cell of 0.296 /spl mu/m/sup 2/. An adequate static noise margin of 120mV is obtained…”
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A 65nm node strained SOI technology with slim spacer by Fu-Liang Yang, Chien-Chao Huang, Hou-Yu Chen, Jhon-Jhy Liaw, Tang-Xuan Chung, Hung-Wei Chen, Chang-Yun Chang, Cheng Chuan Huang, Kuang-Hsin Chen, Di-Hong Lee, Hsun-Chih Tsao, Cheng-Kuo Wen, Shui-Ming Cheng, Yi-Ming Sheu, Ke-Wei Su, Chi-Chun Chen, Tze-Liang Lee, Shih-Chang Chen, Chih-Jian Chen, Cheng-hung Chang, Jhi-cheng Lu, Weng Chang, Chuan-Ping Hou, Ying-Ho Chen, Kuei-Shun Chen, Ming Lu, Li-Wei Kung, Yu-Jun Chou, Fu-Jye Liang, Jan-Wen You, King-Chang Shu, Bin-Chang Chang, Jaw-Jung Shin, Chun-Kuang Chen, Tsai-Sheng Gau, Bor-Wen Chan, Yi-Chun Huang, Han-Jan Tao, Jyh-Huei Chen, Yung-Shun Chen, Yee-Chia Yeo, Fung, S.K.-H., Diaz, C.H., Wu, C.-M.M., Lin, B.J., Liang, M.-S., Sun, J.Y.-C., Chenming Hu

“…A 65 nm node strained SOI technology with high performance is demonstrated, providing drive currents of 1015 and 500 /spl mu/A//spl mu/m for N-FET and P-FET,…”
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