Search Results - "Chabak, Kelson"

β-Gallium oxide power electronics by Green, Andrew J., Speck, James, Xing, Grace, Moens, Peter, Allerstam, Fredrik, Gumaelius, Krister, Neyer, Thomas, Arias-Purdue, Andrea, Mehrotra, Vivek, Kuramata, Akito, Sasaki, Kohei, Watanabe, Shinya, Koshi, Kimiyoshi, Blevins, John, Bierwagen, Oliver, Krishnamoorthy, Sriram, Leedy, Kevin, Arehart, Aaron R., Neal, Adam T., Mou, Shin, Ringel, Steven A., Kumar, Avinash, Sharma, Ankit, Ghosh, Krishnendu, Singisetti, Uttam, Li, Wenshen, Chabak, Kelson, Liddy, Kyle, Islam, Ahmad, Rajan, Siddharth, Graham, Samuel, Choi, Sukwon, Cheng, Zhe, Higashiwaki, Masataka

“…Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies…”
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beta -Ga2O3 MOSFETs for Radio Frequency Operation by Green, Andrew Joseph, Chabak, Kelson D., Baldini, Michele, Moser, Neil, Gilbert, Ryan, Fitch, Robert C., Wagner, Gunter, Galazka, Zbigniew, Mccandless, Jonathan, Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

“…We demonstrate a β-Ga 2 O 3 MOSFET with record-high transconductance (gm) of 21 mS/mm and extrinsic cutoff frequency (fT) and maximum oscillating frequency…”
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Donors and deep acceptors in β-Ga2O3 by Neal, Adam T., Mou, Shin, Rafique, Subrina, Zhao, Hongping, Ahmadi, Elaheh, Speck, James S., Stevens, Kevin T., Blevins, John D., Thomson, Darren B., Moser, Neil, Chabak, Kelson D., Jessen, Gregg H.

“…We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga2O3 through temperature dependent van der Pauw and Hall effect…”
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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices by Glavin, Nicholas R., Chabak, Kelson D., Heller, Eric R., Moore, Elizabeth A., Prusnick, Timothy A., Maruyama, Benji, Walker, Dennis E., Dorsey, Donald L., Paduano, Qing, Snure, Michael

“…Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio‐frequency (RF) signals over large…”
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Toward high voltage radio frequency devices in β-Ga2O3 by Moser, Neil, Liddy, Kyle, Islam, Ahmad, Miller, Nicholas, Leedy, Kevin, Asel, Thaddeus, Mou, Shin, Green, Andrew, Chabak, Kelson

“…The path to achieving integrated RF and power conversion circuitry using the β-Ga2O3 material system is described with regard to the materials high Johnson's…”
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Transient Thermal Management of a β-Ga₂O₃ MOSFET Using a Double-Side Diamond Cooling Approach by Kim, Samuel H., Shoemaker, Daniel, Green, Andrew J., Chabak, Kelson D., Liddy, Kyle J., Graham, Samuel, Choi, Sukwon

“…<inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-phase gallium oxide (<inline-formula> <tex-math notation="LaTeX">\beta…”
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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition by Leedy, Kevin D., Chabak, Kelson D., Vasilyev, Vladimir, Look, David C., Boeckl, John J., Brown, Jeff L., Tetlak, Stephen E., Green, Andrew J., Moser, Neil A., Crespo, Antonio, Thomson, Darren B., Fitch, Robert C., McCandless, Jonathan P., Jessen, Gregg H.

“…Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3…”
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Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices by Neal, Adam T., Mou, Shin, Lopez, Roberto, Li, Jian V., Thomson, Darren B., Chabak, Kelson D., Jessen, Gregg H.

“…Understanding the origin of unintentional doping in Ga 2 O 3 is key to increasing breakdown voltages of Ga 2 O 3 based power devices. Therefore, transport and…”
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ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance by Green, Andrew J., Gillespie, James K., Fitch, Robert C., Walker, Dennis E., Lindquist, Miles, Crespo, Antonio, Brooks, Dan, Beam, Edward, Xie, Andy, Kumar, Vipan, Jimenez, Jose, Lee, Cathy, Cao, Yu, Chabak, Kelson D., Jessen, Gregg H.

“…We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template…”
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β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching by Huang, Hsien-Chih, Ren, Zhongjie, Anhar Uddin Bhuiyan, A F M, Feng, Zixuan, Yang, Zhendong, Luo, Xixi, Huang, Alex Q., Green, Andrew, Chabak, Kelson, Zhao, Hongping, Li, Xiuling

“…In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010)…”
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Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity by Kim, Munho, Huang, Hsien-Chih, Kim, Jeong Dong, Chabak, Kelson D., Kalapala, Akhil Raj Kumar, Zhou, Weidong, Li, Xiuling

“…β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based…”
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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band by Green, Andrew J., Moser, Neil, Miller, Nicholas C., Liddy, Kyle J., Lindquist, Miles, Elliot, Michael, Gillespie, James K., Fitch, Robert C., Gilbert, Ryan, Walker, Dennis E., Werner, Elizabeth, Crespo, Antonio, Beam, Edward, Xie, Andy, Lee, Cathy, Cao, Yu, Chabak, Kelson D.

“…We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz…”
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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge by Moser, Neil A., McCandless, Jonathan P., Crespo, Antonio, Leedy, Kevin D., Green, Andrew J., Heller, Eric R., Chabak, Kelson D., Peixoto, Nathalia, Jessen, Gregg H.

“…We report on Sn-doped β -Ga2O3 MOSFETs grown by molecular beam epitaxy with as-grown carrier concentrations from 0.7 × 1018 to 1.6 × 1018 cm−3 and a fixed…”
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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band by Moser, Neil A., Asel, Tadj, Liddy, Kyle J., Lindquist, Miles, Miller, Nicholas C., Mou, Shin, Neal, Adam, Walker, Dennis E., Tetlak, Steve, Leedy, Kevin D., Jessen, Gregg H., Green, Andrew J., Chabak, Kelson D.

“…DC, small, and large signal results are shown under continuous wave and pulsed conditions for a β-Ga 2 O 3 metal-oxide-semiconductor field-effect transistor…”
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Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation by Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.

“…We calculated power figure-of-merit (PFoM) in <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3-based lateral…”
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Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals by Islam, Ahmad Ehteshamul, Zhang, Chenyu, DeLello, Kursti, Muller, David A., Leedy, Kevin D., Ganguli, Sabyasachi, Moser, Neil A., Kahler, Rachel, Williams, Jeremiah C., Dryden, Daniel M., Tetlak, Stephen, Liddy, Kyle J., Green, Andrew J., Chabak, Kelson D.

“…High-quality dielectrics with a low defect density at the dielectric/semiconductor interface are essential for the application of <inline-formula> <tex-math…”
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Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit by Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.

“…We demonstrate a passivated MESFET fabricated on (010) Si-doped <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 with…”
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Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs by Kim, Samuel H., Shoemaker, Daniel, Chatterjee, Bikramjit, Green, Andrew J., Chabak, Kelson D., Heller, Eric R., Liddy, Kyle J., Jessen, Gregg H., Graham, Samuel, Choi, Sukwon

“…<inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-phase gallium oxide (<inline-formula> <tex-math notation="LaTeX">\beta…”
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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length by Islam, Ahmad E., Sepelak, Nicholas P., Miesle, Adam T., Lee, Hanwool, Snure, Michael, Nikodemski, Stefan, Walker, Dennis E., Miller, Nicholas C., Grupen, Matt, Leedy, Kevin D., Liddy, Kyle J., Crespo, Antonio, Hughes, Gary R., Zhu, Wenjuan, Poling, Brian, Tetlak, Stephen, Chabak, Kelson D., Green, Andrew J.

“…High temperature (HT) electronics applications will require the development of a broad range of devices made using different materials. Among these devices,…”
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III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications by Yi Song, Chen Zhang, Dowdy, Ryan, Chabak, Kelson, Mohseni, Parsian K., Wonsik Choi, Xiuling Li

“…III-V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally demonstrated for the first time. Source/drain resistance and thermal…”
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