Search Results - "Cha, Suhyeong"
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Deterministic Boltzmann equation solver for graphene sheets including self-heating effects
Published in 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01-09-2016)“…A deterministic Boltzmann equation solver for graphene sheets is developed. The self-heating effect is included. The Boltzmann transport equation is expanded…”
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Conference Proceeding -
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Study of β -Ga 2 O 3 -Based Thin-Channel MODFET Devices Using a Coupled Drift-Diffusion/Multisubband BTE Solver
Published in IEEE transactions on electron devices (01-09-2022)Get full text
Journal Article -
3
Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion
Published in Solid-state electronics (01-12-2022)“…In this work, we propose a numerical stabilization method for a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion. In…”
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Optimization of Nitrogen Ion Implantation Condition for β-Ga 2 O 3 Vertical MOSFETs via Process and Device Simulation
Published in IEEE transactions on electron devices (01-12-2022)Get full text
Journal Article -
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Study of β-Ga2O3-Based Thin-Channel MODFET Devices Using a Coupled Drift-Diffusion/Multisubband BTE Solver
Published in IEEE transactions on electron devices (01-09-2022)“…Gallium-oxide-based modulation-doped field-effect transistors (MODFETs) are theoretically investigated. In order to properly consider the electrical…”
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Journal Article -
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Optimization of Nitrogen Ion Implantation Condition for \beta -Ga \text O \text Vertical MOSFETs via Process and Device Simulation
Published in IEEE transactions on electron devices (2022)“…In this work, nitrogen implantation conditions for a vertical <inline-formula> <tex-math notation="LaTeX">\beta</tex-math> </inline-formula>-Ga<inline-formula>…”
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Journal Article -
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Optimization of Nitrogen Ion Implantation Condition for β-Ga2O3 Vertical MOSFETs via Process and Device Simulation
Published in IEEE transactions on electron devices (01-12-2022)“…In this work, nitrogen implantation conditions for a vertical [Formula Omitted]-Ga2O3 MOSFET with a planar gate have been optimized to maximize the power…”
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Journal Article -
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Theoretical Study of Electron Transport Properties in GaN-Based HEMTs Using a Deterministic Multi-Subband Boltzmann Transport Equation Solver
Published in IEEE transactions on electron devices (01-09-2019)“…A high-electron mobility transistor (HEMT) with a GaN channel is simulated using a deterministic multi-subband Boltzmann transport equation solver. A structure…”
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Self-Aligned Metal-Semiconductor-Metal Varactors Based on the AlGaN/GaN Heterostructure
Published in IEEE electron device letters (01-11-2019)“…The self-aligned metal-semiconductor-metal (SA-MSM) structure was utilized to fabricate varactors on top of the AlGaN/GaN heterostructures. The SA-MSM…”
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Journal Article -
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Effects of periodic patterns in recessed ohmic contacts on InAlGaN/GaN heterostructures
Published in Solid-state electronics (01-12-2020)“…•Periodic patterns in recessed ohmic contacts on InAlGaN/GaN heterostructures.•Low ohmic contact resistance associated with the sidewall contact.•Improved DC…”
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Journal Article -
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A Deterministic Multi-Subband Boltzmann Transport Equation Solver for GaN Based HEMTs
Published in 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01-09-2018)“…A high electron mobility transistor based on a GaN channel is simulated by using a deterministic Boltzmann transport equation solver. In order to verify the…”
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Conference Proceeding