Search Results - "Cha, Suhyeong"

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  1. 1

    Deterministic Boltzmann equation solver for graphene sheets including self-heating effects by Sung-Min Hong, Suhyeong Cha

    “…A deterministic Boltzmann equation solver for graphene sheets is developed. The self-heating effect is included. The Boltzmann transport equation is expanded…”
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    Conference Proceeding
  2. 2
  3. 3

    Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion by Cha, Suhyeong, Hong, Sung-Min

    Published in Solid-state electronics (01-12-2022)
    “…In this work, we propose a numerical stabilization method for a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion. In…”
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    Journal Article
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  5. 5

    Study of β-Ga2O3-Based Thin-Channel MODFET Devices Using a Coupled Drift-Diffusion/Multisubband BTE Solver by Cha, Suhyeong, Hong, Sung-Min

    Published in IEEE transactions on electron devices (01-09-2022)
    “…Gallium-oxide-based modulation-doped field-effect transistors (MODFETs) are theoretically investigated. In order to properly consider the electrical…”
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    Journal Article
  6. 6

    Optimization of Nitrogen Ion Implantation Condition for \beta -Ga \text O \text Vertical MOSFETs via Process and Device Simulation by Kim, In Ki, Cha, Suhyeong, Hong, Sung-Min

    “…In this work, nitrogen implantation conditions for a vertical <inline-formula> <tex-math notation="LaTeX">\beta</tex-math> </inline-formula>-Ga<inline-formula>…”
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    Journal Article
  7. 7

    Optimization of Nitrogen Ion Implantation Condition for β-Ga2O3 Vertical MOSFETs via Process and Device Simulation by In Ki Kim, Cha, Suhyeong, Sung-Min, Hong

    Published in IEEE transactions on electron devices (01-12-2022)
    “…In this work, nitrogen implantation conditions for a vertical [Formula Omitted]-Ga2O3 MOSFET with a planar gate have been optimized to maximize the power…”
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    Journal Article
  8. 8

    Theoretical Study of Electron Transport Properties in GaN-Based HEMTs Using a Deterministic Multi-Subband Boltzmann Transport Equation Solver by Cha, Suhyeong, Hong, Sung-Min

    Published in IEEE transactions on electron devices (01-09-2019)
    “…A high-electron mobility transistor (HEMT) with a GaN channel is simulated using a deterministic multi-subband Boltzmann transport equation solver. A structure…”
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    Journal Article
  9. 9

    Self-Aligned Metal-Semiconductor-Metal Varactors Based on the AlGaN/GaN Heterostructure by Hwang, Ji Hyun, Lee, Gyejung, Nouman, Muhammad Tayyab, Cha, Suhyeong, Hong, Sung-Min, Jang, Jae-Hyung

    Published in IEEE electron device letters (01-11-2019)
    “…The self-aligned metal-semiconductor-metal (SA-MSM) structure was utilized to fabricate varactors on top of the AlGaN/GaN heterostructures. The SA-MSM…”
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    Journal Article
  10. 10

    Effects of periodic patterns in recessed ohmic contacts on InAlGaN/GaN heterostructures by Jang, Mi, Park, Juyeong, Hyun Hwang, Ji, Jin Mun, Ha, Cha, Suhyeong, Hong, Sung-Min, Jang, Jae-Hyung

    Published in Solid-state electronics (01-12-2020)
    “…•Periodic patterns in recessed ohmic contacts on InAlGaN/GaN heterostructures.•Low ohmic contact resistance associated with the sidewall contact.•Improved DC…”
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    Journal Article
  11. 11

    A Deterministic Multi-Subband Boltzmann Transport Equation Solver for GaN Based HEMTs by Cha, Suhyeong, Hong, Sung-Min

    “…A high electron mobility transistor based on a GaN channel is simulated by using a deterministic Boltzmann transport equation solver. In order to verify the…”
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    Conference Proceeding