Search Results - "Cha, Seonyong"

Data Retention Characteristics for Gate Oxide Schemes in Sub-50 nm Saddle-Fin Transistor Dynamic-Random-Access-Memory Technology by Ryu, Seong-Wan, Yoo, Minsoo, Choi, Deuksung, Cha, Seonyong, Jeong, Jae-Goan

“…A data retention time has been investigated for various gate oxide schemes of saddle-fin (S-Fin) transistor dynamic random access memory (DRAM). The interface…”
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Data Retention Characteristics for Gate Oxide Schemes in Sub-50 nm Saddle-Fin Transistor Dynamic-Random-Access-Memory Technology by Ryu, Seong-Wan, Yoo, Minsoo, Choi, Deuksung, Cha, Seonyong, Jeong, Jae-Goan

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Improved electrical characteristics and reliability of p-MOSFET with fluorine implant by Lee, Seonhaeng, Yoo, Keon, Ryu, Youngmi, Choi, Yuri, Nam, Kibong, Son, Seunghun, Cha, Seonyong

“…•The method of fluorine implant improves both electrical characteristics and reliabilities.•The fluorine implant induced flat band voltage shift ~−40 mV and…”
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A 24-Gb/s/Pin 8-Gb GDDR6 With a Half-Rate Daisy-Chain-Based Clocking Architecture and I/O Circuitry for Low-Noise Operation by Kang, Ji-Hyo, Yang, Jaehyeok, Kim, Kyunghoon, Chae, Joo-Hyung, Lee, Gangsik, Byeon, Sangyeon, Kim, Boram, Kim, Dong-Hyun, Kim, Youngtaek, Cho, Yeongmuk, Ji, Junghwan, Jeong, Sera, Cha, Jaehoon, Park, Minsoo, Kim, Hongdeuk, Park, Sijun, Kim, Sunho, Jung, Hae-Kang, Jang, Jieun, Lee, Sangkwon, Kim, Hyungsoo, Cho, Joo-Hwan, Chun, Junhyun, Cha, Seonyong

“…The demand for high-performance graphics systems used for artificial intelligence, cloud game, and virtual reality continues to grow; this trend requires…”
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Holistic approaches to memory solutions for the Autonomous Driving Era by Shim, Daeyong, Jeong, Chunseok, Lee, Euncheol, Kang, Junmo, Yoon, Seokcheol, Kwon, Yongkee, Park, Il, Ahn, Hyun, Cha, Seonyong, Kim, Jinkook

“…As DNNs improving state-of-the-art accuracy on many artificial intelligence (AI) applications such as computer vision processing for autonomous driving, the…”
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The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory by Yi, Jaeyun, Kim, Myoungsub, Seo, Jungwon, Park, Namkyun, Lee, Seungyun, Kim, Jongil, Do, Gapsok, Jang, Hongjin, Koo, Hyochol, Cho, Sunglae, Chae, Sujin, Kim, Taehoon, Na, Myung-Hee, Cha, Seonyong

“…We demonstrate a high performance and cost effective cross point memory (CPM) technology for storage class memory(SCM) which consists of 20nm 1S1M (one…”
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Demonstration of crystalline IGZO transistor with high thermal stability for memory applications by Kim, Whayoung, Kim, Jaehyeon, Ko, Dongjin, Cha, Jun-Hwe, Park, Gyeongcheol, Ahn, Youngbae, Lee, Jong-Young, Sung, Minchul, Choi, Hyejung, Ryu, Seung Wook, Kim, Seiyon, Na, Myunghee, Cha, Seonyong

“…Highly ordered crystalline InGaZnO (c-IGZO) TFTs have been demonstrated in subsequent processes above 550 °C compatible with memory applications. Notably,…”
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QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering by Yoon, Sunghyun, Hong, Sung-In, Kim, Daehyun, Choi, Garam, Kim, Young Mo, Min, Kyunghoon, Kim, Seiyon, Na, Myung-Hee, Cha, Seonyong

“…3D ferroelectric NAND (Fe-NAND) Quad-level cell (QLC) operation has been demonstrated for the first time to our knowledge, using the 3D CTN NAND test vehicle…”
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First Demonstration of Fully Integrated 16 nm Half-Pitch Selector Only Memory (SOM) for Emerging CXL Memory by Kim, Myoungsub, Bae, Yooncheol, Park, Jaehyuk, Yeon, Jeongho, Shim, Hyungjoon, Jin, Sehyun, Kim, Hyunsoo, Oh, Sangchul, Do, Gapsok, Yun, Dongyeol, Lee, Hyung Dong, Ahn, David, Lee, Junghun, Park, Muhui, Yoon, Junghyuk, Yi, Jeongho, Kim, Taekseung, Park, Gain, Chung, Seoungju, Cheon, Junho, Chae, Sujin, Park, Namkyun, Kim, Kyunghoon, Oh, Dongyean, Yi, Jaeyun, Cha, Seonyong

“…In this study, understanding the switching mechanisms of selector only memory (SOM) led to implementation of TCAD, and advanced materials and processes were…”
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28.2 A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers \mathsf by Kim, Bvunarvul, Lee, Seungpil, Hah, Beomseok, Park, Kanawoo, Park, Yongsoon, Jo, Kangwook, Noh, Yujong, Seol, Hyeoncheon, Lee, Hyunsoo, Shin, Jaehyeon, Choi, Seongjin, Jung, Youngdon, Ahn, Sungho, Park, Yonghun, Oh, Sujeong, Kim, Myungsu, Kim, Seonauk, Park, Hyunwook, Lee, Taeho, Won, Haeun, Kim, Minsung, Koo, Cheulhee, Choi, Yeonjoo, Choi, Suyoung, Park, Sechun, Youn, Dongkyu, Lim, Junyoun, Park, Wonsun, Hur, Hwang, Kwean, Kichang, Choi, Hongsok, Jeong, Woopyo, Chung, Sungyong, Choi, Jungdal, Cha, Seonyong

“…As data produced by multimedia explodes and demand for data storage increases, the most important topics for the NAND-Flash memory field are continuous…”
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25.1 A 24Gb/s/pin 8Gb GDDR6 with a Half-Rate Daisy-Chain-Based Clocking Architecture and IO Circuitry for Low-Noise Operation by Kim, Kyunghoon, Chae, Joo-Hyung, Yang, Jaehyeok, Kang, Jihyo, Lee, Gangsik, Byeon, Sangyeon, Kim, Youngtaek, Kim, Boram, Kim, Dong-Hyun, Cho, Yeongmuk, Choi, Kangmoo, Park, Hyeongyeol, Ji, Junghwan, Jeong, Sera, Joo, Yongsuk, Cha, Jaehoon, Park, Minsoo, Kim, Hongdeuk, Park, Sijun, Kong, Kyubong, Kim, Sunho, Lee, Sangkwon, Chun, Junhyun, Kim, Hyungsoo, Cha, Seonyong

“…The demand for high-performance graphics systems used for artificial intelligence continues to grow; this trend requires graphics systems to achieve ever…”
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Extremely high performance, high density 20nm self-selecting cross-point memory for Compute Express Link by Hong, Seokman, Choi, Hyejung, Park, Jaehyuk, Bae, Yoonchel, Kim, Kyusung, Lee, Wootae, Lee, Seungyoon, Lee, Hyungdong, Cho, Seongrae, Ahn, Joonkoo, Kim, Seiyon, Kim, Taehoon, Na, Myunghee, Cha, Seonyong

“…We demonstrate an array operation of 20 nm self-selecting memory (SSM) for the first time. SSM shows extremely high cell performance, great reliability, and…”
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Industry's First Recessed Gate Transistor Technology for Sense Amplifer Circuit in DRAM: Phenomena of Randomly Threshold Voltage High Flying and Subthreshold Swing Degradation by Oh, Dongyean, Yang, Heejung, Cha, Seonyong, Lee, Seungchul, Park, Sungkye, Kim, Jinkook

“…We have fabricated a recessed gate (RG) transistor for sense amplifier (SA) in high density DRAM and have compared it with a conventional planar gate (PG)…”
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Realistic Noise-aware Training as a Component of the Holistic ACiM Development Platform by Kim, Jihun, Park, Sangsu, Suh, Hongju, Kwon, Youngjae, Lee, Seonghun, Lee, Yubin, Kim, Kayoung, Han, Eungu, Kim, Jongil, Kim, Kyu Sung, Choi, Hyejung, Ryu, Seungwook, Chae, Su Jin, Lee, Seho, Kim, Soo Gil, Yi, Jaeyun, Cha, Seonyong

“…Analog Computing-in-Memory is promising and energy-efficient AI acceleration hardware due to the elimination of von-Neumann bottleneck and adoption of…”
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A Workfunction Engineered Middle-Silicon-TiN Gate (MSTG) Cell Transistor in 16Gbit DRAM for High Scalability and Long Data Retention by Ryu, Seong-Wan, Min, Kyung Kyu, Hwang, Sunghwan, Seung, Hyunmin, Yoon, Sungsoo, Nam, Yoonjae, Moon, Jungmin, Kim, Yaeji, Kim, Euntae, Park, Jongkook, Jang, Kyoungchul, Kang, Sinwoo, Kim, Taekyun, Kim, Seonsoon, Jin, Ilsup, Cha, Seonyong

“…To mitigate the constraint of the increased gate resistance for dual-workfunction-gate (DWG) cell transistors as a standard platform in the DRAM industry, a…”
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Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory by Park, Sangsu, Lee, Gyonhui, Kwon, Youngjae, Suh, Dong Ik, Lee, Hanwool, Je, Sangeun, Kim, Dabin, Lee, Dohan, Ryu, Seungwook, Kim, Seungbum, Kim, Euiseok, Lee, Sunghoon, Park, Kyoung, Lee, Seho, Na, Myung-Hee, Cha, Seonyong

“…As AI technology develops, it is necessary to verify the technical feasibility of Memory-Centric convergence technology. Previously investigated resistive…”
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