Search Results - "Cetronio, Antonio"

Silicon carbide for high resolution X-ray detectors operating up to 100°C by Bertuccio, Giuseppe, Casiraghi, Roberto, Cetronio, Antonio, Lanzieri, Claudio, Nava, Filippo

“…This work presents experimental results on the possibility of high resolution X-ray spectroscopy in a wide temperature range, from room temperature up to 100°C…”
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Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing by Zanoni, E., Danesin, F., Meneghini, M., Cetronio, A., Lanzieri, C., Peroni, M., Meneghesso, G.

“…Reverse-bias testing in AlGaN/GaN HEMTs at high (negative) gate voltage is found to induce a catastrophic increase in gate leakage current I G , with only a…”
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A new generation of X-ray detectors based on silicon carbide by Bertuccio, Giuseppe, Casiraghi, Roberto, Cetronio, Antonio, Lanzieri, Claudio, Nava, Filippo

“…We present experimental results on X-ray detectors based on Silicon Carbide (SiC). We demonstrate that SiC allows operating the detectors in a wide temperature…”
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Localized Damage in AIGaN/GaN HEMTs Induced by Reverse-Bias Testing by ZANONI, Enrico, DANESIN, Francesca, MENEGHINI, Matteo, CETRONIO, Antonio, LANZIERI, Claudio, PERONI, Marco, MENEGHESSO, Gaudenzio

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Thermal storage effects on AlGaN/GaN HEMT by Danesin, Francesca, Tazzoli, Augusto, Zanon, Franco, Meneghesso, Gaudenzio, Zanoni, Enrico, Cetronio, Antonio, Lanzieri, Claudio, Lavanga, Simone, Peroni, Marco, Romanini, Paolo

“…The effects of thermal storage on GaN–HEMT devices grown on SiC substrate have been investigated by DC and pulsed electrical measurements, breakdown…”
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High power GaN-HEMT SPDT switches for microwave applications by Bettidi, Andrea, Cetronio, Antonio, Ciccognani, Walter, De Dominicis, Marco, Lanzieri, Claudio, Limiti, Ernesto, Manna, Antonio, Peroni, Marco, Proietti, Claudio, Romanini, Paolo

“…In this article, the design, fabrication, and on‐wafer test of X‐Band and 2–18 GHz wideband high‐power SPDT MMIC switches in AlGaN/GaN technology are…”
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Study of the Coupling of Terahertz Radiation to Heterostructure Transistors with a Free Electron Laser Source by Ortolani, Michele, Di Gaspare, Alessandra, Giovine, Ennio, Evangelisti, Florestano, Foglietti, Vittorio, Doria, Andrea, Gallerano, Gian Piero, Giovenale, Emilio, Messina, Giovanni, Spassovsky, Ivan, Lanzieri, Claudio, Peroni, Marco, Cetronio, Antonio

“…High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. Here, we…”
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High power GaN-HEMT SPDT switches for microwave applications: High Power GaN-HEMT Switches by Bettidi, Andrea, Cetronio, Antonio, Ciccognani, Walter, De Dominicis, Marco, Lanzieri, Claudio, Limiti, Ernesto, Manna, Antonio, Peroni, Marco, Proietti, Claudio, Romanini, Paolo

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Integrated HEMT-based charge amplifier-design and experiment by Arnaboldi, C., Guazzoni, C., Longoni, A., Pessina, G., Cetronio, A.

“…We have designed and tested a fully integrated high electron mobility transistor (HEMT)-based charge amplifier suitable for applications in high-energy physics…”
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Critical analysis of results for a european GaN power amplifier after first iteration by Gonzalez-Garrido, M.-A., Grajal, J., Cetronio, A., Marescialli, L.

“…This paper presents the results of the development of 2-6 GHz broadband high-power amplifiers (HPA) within the 1 st iteration of the European Korrigan project…”
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2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications by Gonzalez-Garrido, M.A., Grajal, J., Cubilla, P., Cetronio, A., Lanzieri, C., Uren, M.

“…This paper presents two MMIC broadband high power amplifiers of 4 mm of periphery at the output stage in the frequency band 2-6 GHz. The amplifiers are based…”
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Gate technology and substrate property influence on GaN HEMT switch device performance by Pantellini, A., Peroni, M., Nanni, A., Cetronio, A., Bettidi, A., Giovine, E.

“…This work illustrates a study on GaN HEMT switch RF performances dependence on material and fabrication technology. For said study different gate technologies…”
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Large-Signal Modeling of Power GaN HEMTs Including Thermal Effects by Torregrosa, G., Grajal, J., Peroni, M., Serino, A., Nanni, A., Cetronio, A.

“…In this paper a procedure to extract temperature dependent equivalent circuits for modeling the small and large signal behavior of GaN HEMTs is presented. The…”
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Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach by Zanoni, E., Meneghesso, G., Meneghini, M., Tazzoli, A., Ronchi, N., Stocco, A., Zanon, F., Chini, A., Verzellesi, G., Cetronio, A., Lanzieri, C., Peroni, M.

“…Several groups have demonstrated nitride-based High Electron Mobility Transistors with excellent rf output power, with a constant increase in performances…”
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