Search Results - "Cerdeira, A"

Refine Results
  1. 1

    Angiogenic factors: potential to change clinical practice in pre‐eclampsia? by Cerdeira, AS, Agrawal, S, Staff, AC, Redman, CW, Vatish, M

    “…Pre‐eclampsia is a complex disease with significant maternal and fetal morbidity and mortality. Its syndromic nature makes diagnosis and management difficult…”
    Get full text
    Journal Article
  2. 2

    The role of angiogenic factors in the management of preeclampsia by Flint, Emma J, Cerdeira, A Sofia, Redman, Christopher W, Vatish, Manu

    “…Preeclampsia is a pregnancy disorder causing substantial maternal and fetal morbidity and mortality. In the UK, its diagnosis currently depends upon new onset…”
    Get more information
    Journal Article
  3. 3

    Analytical Current-Voltage Model for Double-Gate a-IGZO TFTs With Symmetric Structure for Above Threshold by Hernandez-Barrios, Y., Cerdeira, A., Estrada, M., In, B.

    Published in IEEE transactions on electron devices (01-05-2020)
    “…This article presents an analytical model to reproduce the I-V characteristics of a double-gate (DG) amorphous indium-gallium-zinc oxide (a-IGZO) TFT with…”
    Get full text
    Journal Article
  4. 4

    Features of the Nonlinear Harmonic Distortion in AOSTFTs by Hernandez-Barrios, Y., Cerdeira, A., Tinoco, J., Iniguez, B.

    Published in IEEE transactions on electron devices (01-12-2019)
    “…In this article, we present the analysis of the nonlinear harmonic distortion (HD) characteristics for two kinds of amorphous oxide semiconductor thin film…”
    Get full text
    Journal Article
  5. 5

    A review of recent MOSFET threshold voltage extraction methods by Ortiz-Conde, A., Garcı́a Sánchez, F.J., Liou, J.J., Cerdeira, A., Estrada, M., Yue, Y.

    Published in Microelectronics and reliability (01-04-2002)
    “…The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or…”
    Get full text
    Journal Article
  6. 6

    Reduction of the repulsive interaction as origin of helium trapping inside a monovacancy in BCC metals by González, C., Cerdeira, M. A., Palacios, S. L., Iglesias, R.

    Published in Journal of materials science (01-05-2015)
    “…We present the energetic, structural and electronic properties that explain the accumulation of He inside a single vacancy in both a BCC W and a BCC Nb…”
    Get full text
    Journal Article
  7. 7

    Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM) by Hernandez-Barrios, Y., Gaspar-Angeles, J. N., Estrada, M., Iniguez, B., Cerdeira, A.

    “…The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring…”
    Get full text
    Journal Article
  8. 8

    QUALITY CONTROL RELEVANCE ON ACQUISITION OF LARGE SCALE GEOSPATIAL DATA TO URBAN TERRITORIAL MANAGEMENT by Filho, A. G. G., Borba, P., Silva, V. H. S., Cerdeira, A., Poz, A. P. D.

    “…Quality control (QC) of geospatial data is relevant to urban territorial management to ensure accurate data for government to make strategic decisions when…”
    Get full text
    Journal Article Conference Proceeding
  9. 9

    Effect of active layer thickness on the electrical characteristics of polymer thin film transistors by Reséndiz, L., Estrada, M., Cerdeira, A., Iñiguez, B., Deen, M.J.

    Published in Organic electronics (01-12-2010)
    “…In this paper, we analyze the variation of the threshold voltage V T and carrier mobility μ fet with the active layer thickness of polymer thin film…”
    Get full text
    Journal Article
  10. 10

    Modeling the behavior of amorphous oxide thin film transistors before and after bias stress by Cerdeira, A., Estrada, M., Soto-Cruz, B.S., Iñiguez, B.

    Published in Microelectronics and reliability (01-11-2012)
    “…In this work we present a procedure for modeling the characteristics of amorphous oxide semiconductor TFTs, including the hump observed in the transfer…”
    Get full text
    Journal Article
  11. 11

    Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs by Cerdeira, A., Moldovan, O., Iñiguez, B., Estrada, M.

    Published in Solid-state electronics (01-05-2008)
    “…Analytical expressions are presented to model the behavior of the potential at the surface and the difference of potentials at the surface and at the center of…”
    Get full text
    Journal Article
  12. 12

    Temperature dependence of the electrical characteristics of low-temperature processed zinc oxide thin film transistors by Estrada, M., Gutierrez-Heredia, G., Cerdeira, A., Alvarado, J., Garduño, I., Tinoco, J., Mejia, I., Quevedo-Lopez, M.

    Published in Thin solid films (31-12-2014)
    “…The impact on the electrical behavior of thin film transistors, TFTs, based on zinc oxide, ZnO-based TFTs, with temperature is analyzed. ZnO is deposited using…”
    Get full text
    Journal Article
  13. 13

    Accurate modeling and parameter extraction method for organic TFTs by Estrada, M., Cerdeira, A., Puigdollers, J., Reséndiz, L., Pallares, J., Marsal, L.F., Voz, C., Iñiguez, B.

    Published in Solid-state electronics (01-06-2005)
    “…In this paper we demonstrate the applicability of the unified model and parameter extraction method (UMEM), previously developed by us, to organic thin film…”
    Get full text
    Journal Article
  14. 14

    Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors by Estrada, M., Rivas, M., Garduño, I., Avila-Herrera, F., Cerdeira, A., Pavanello, M., Mejia, I., Quevedo-Lopez, M.A.

    Published in Microelectronics and reliability (01-01-2016)
    “…The temperature dependence in the typical temperature operating range from 300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at…”
    Get full text
    Journal Article
  15. 15

    Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors by Cerdeira, A., Estrada, M., Iniguez, B., Trevisoli, R.D., Doria, R.T., de Souza, M., Pavanello, M.A.

    Published in Solid-state electronics (01-07-2013)
    “…•Continuous model for Symmetric Double-Gate Junctionless Transistors is proposed.•The model is physically-based for depletion and accumulation operating…”
    Get full text
    Journal Article
  16. 16

    Compact core model for Symmetric Double-Gate Junctionless Transistors by Cerdeira, A., Ávila, F., Íñiguez, B., de Souza, M., Pavanello, M.A., Estrada, M.

    Published in Solid-state electronics (01-04-2014)
    “…•Physically-based compact model for Symmetric Double-Gate Junctionless Transistors.•The model considers both depletion and accumulation operating…”
    Get full text
    Journal Article
  17. 17

    Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations by Cheralathan, M., Cerdeira, A., Iñiguez, B.

    Published in Solid-state electronics (2011)
    “…This paper presents a compact model for the electrostatic potentials and the current characteristics of doped long-channel cylindrical surrounding-gate (SRG)…”
    Get full text
    Journal Article
  18. 18

    Magnetoimpedance biosensor for Fe3O4 nanoparticle intracellular uptake evaluation by Kumar, A., Mohapatra, S., Fal-Miyar, V., Cerdeira, A., García, J. A., Srikanth, H., Gass, J., Kurlyandskaya, G. V.

    Published in Applied physics letters (01-10-2007)
    “…Iron oxide (Fe3O4) nonspecific nanoparticles of 30nm are embedded inside human embryonic kidney (HEK 293) cells by intracellular uptake with a concentration of…”
    Get full text
    Journal Article
  19. 19

    Mobility model for compact device modeling of OTFTs made with different materials by Estrada, M., Mejía, I., Cerdeira, A., Pallares, J., Marsal, L.F., Iñiguez, B.

    Published in Solid-state electronics (01-05-2008)
    “…In this paper we present a new approach to model mobility in organic thin film transistors, OTFTs, which is used to analyze the behavior of mobility in devices…”
    Get full text
    Journal Article
  20. 20

    Angiogenic factors in preeclampsia and related disorders by Cerdeira, Ana Sofia, Karumanchi, S Ananth

    “…During fetal development, the human placenta undergoes high levels of both angiogenesis and vasculogenesis. Additionally, the developing placenta undergoes a…”
    Get full text
    Journal Article