Search Results - "Cerdeira, A"
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1
Angiogenic factors: potential to change clinical practice in pre‐eclampsia?
Published in BJOG : an international journal of obstetrics and gynaecology (01-10-2018)“…Pre‐eclampsia is a complex disease with significant maternal and fetal morbidity and mortality. Its syndromic nature makes diagnosis and management difficult…”
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2
The role of angiogenic factors in the management of preeclampsia
Published in Acta obstetricia et gynecologica Scandinavica (01-06-2019)“…Preeclampsia is a pregnancy disorder causing substantial maternal and fetal morbidity and mortality. In the UK, its diagnosis currently depends upon new onset…”
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3
Analytical Current-Voltage Model for Double-Gate a-IGZO TFTs With Symmetric Structure for Above Threshold
Published in IEEE transactions on electron devices (01-05-2020)“…This article presents an analytical model to reproduce the I-V characteristics of a double-gate (DG) amorphous indium-gallium-zinc oxide (a-IGZO) TFT with…”
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4
Features of the Nonlinear Harmonic Distortion in AOSTFTs
Published in IEEE transactions on electron devices (01-12-2019)“…In this article, we present the analysis of the nonlinear harmonic distortion (HD) characteristics for two kinds of amorphous oxide semiconductor thin film…”
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5
A review of recent MOSFET threshold voltage extraction methods
Published in Microelectronics and reliability (01-04-2002)“…The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or…”
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6
Reduction of the repulsive interaction as origin of helium trapping inside a monovacancy in BCC metals
Published in Journal of materials science (01-05-2015)“…We present the energetic, structural and electronic properties that explain the accumulation of He inside a single vacancy in both a BCC W and a BCC Nb…”
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7
Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)
Published in IEEE journal of the Electron Devices Society (2021)“…The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring…”
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8
QUALITY CONTROL RELEVANCE ON ACQUISITION OF LARGE SCALE GEOSPATIAL DATA TO URBAN TERRITORIAL MANAGEMENT
Published in International archives of the photogrammetry, remote sensing and spatial information sciences. (04-11-2020)“…Quality control (QC) of geospatial data is relevant to urban territorial management to ensure accurate data for government to make strategic decisions when…”
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9
Effect of active layer thickness on the electrical characteristics of polymer thin film transistors
Published in Organic electronics (01-12-2010)“…In this paper, we analyze the variation of the threshold voltage V T and carrier mobility μ fet with the active layer thickness of polymer thin film…”
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10
Modeling the behavior of amorphous oxide thin film transistors before and after bias stress
Published in Microelectronics and reliability (01-11-2012)“…In this work we present a procedure for modeling the characteristics of amorphous oxide semiconductor TFTs, including the hump observed in the transfer…”
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11
Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs
Published in Solid-state electronics (01-05-2008)“…Analytical expressions are presented to model the behavior of the potential at the surface and the difference of potentials at the surface and at the center of…”
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12
Temperature dependence of the electrical characteristics of low-temperature processed zinc oxide thin film transistors
Published in Thin solid films (31-12-2014)“…The impact on the electrical behavior of thin film transistors, TFTs, based on zinc oxide, ZnO-based TFTs, with temperature is analyzed. ZnO is deposited using…”
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13
Accurate modeling and parameter extraction method for organic TFTs
Published in Solid-state electronics (01-06-2005)“…In this paper we demonstrate the applicability of the unified model and parameter extraction method (UMEM), previously developed by us, to organic thin film…”
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14
Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
Published in Microelectronics and reliability (01-01-2016)“…The temperature dependence in the typical temperature operating range from 300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at…”
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15
Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors
Published in Solid-state electronics (01-07-2013)“…•Continuous model for Symmetric Double-Gate Junctionless Transistors is proposed.•The model is physically-based for depletion and accumulation operating…”
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16
Compact core model for Symmetric Double-Gate Junctionless Transistors
Published in Solid-state electronics (01-04-2014)“…•Physically-based compact model for Symmetric Double-Gate Junctionless Transistors.•The model considers both depletion and accumulation operating…”
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17
Compact model for long-channel cylindrical surrounding-gate MOSFETs valid from low to high doping concentrations
Published in Solid-state electronics (2011)“…This paper presents a compact model for the electrostatic potentials and the current characteristics of doped long-channel cylindrical surrounding-gate (SRG)…”
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18
Magnetoimpedance biosensor for Fe3O4 nanoparticle intracellular uptake evaluation
Published in Applied physics letters (01-10-2007)“…Iron oxide (Fe3O4) nonspecific nanoparticles of 30nm are embedded inside human embryonic kidney (HEK 293) cells by intracellular uptake with a concentration of…”
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19
Mobility model for compact device modeling of OTFTs made with different materials
Published in Solid-state electronics (01-05-2008)“…In this paper we present a new approach to model mobility in organic thin film transistors, OTFTs, which is used to analyze the behavior of mobility in devices…”
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20
Angiogenic factors in preeclampsia and related disorders
Published in Cold Spring Harbor perspectives in medicine (01-11-2012)“…During fetal development, the human placenta undergoes high levels of both angiogenesis and vasculogenesis. Additionally, the developing placenta undergoes a…”
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