Search Results - "Celio, K. C."

Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes by Celio, K. C., Armstrong, A. M., Talin, A. A., Allerman, A. A., Crawford, M. H., Pickrell, G. W., Leonard, F.

“…Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in…”
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High-Voltage Regrown Nonpolar -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches by Monavarian, M., Pickrell, G., Aragon, A. A., Stricklin, I., Crawford, M. H., Allerman, A. A., Celio, K. C., Leonard, F., Talin, A. A., Armstrong, A. M., Feezell, D.

“…We report high-voltage regrown nonpolar <inline-formula> <tex-math notation="LaTeX">{m} </tex-math></inline-formula>-plane p-n diodes on freestanding GaN…”
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Laboratory X-Ray-Assisted Device Alteration for Fault Isolation and Post-Silicon Debug by Celio, K. C., Sen, S., Nisenboim, E., Pardy, P. M., Nguyen, B., Le, V., Nolting, W., Kumar, S., Peterson, C. A., Raveh, A., Johnson, K., Stripe, B., Su, F., Lun, M., Lewis, S., Spink, R. I., Yun, W.

“…Increasing 3D complexities in modern chipsets necessitate new approaches to fault isolation and post-silicon debug. Recent innovations, including backside…”
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High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches by Monavarian, M., Pickrell, G., Aragon, A. A., Stricklin, I., Crawford, M. H., Allerman, A. A., Celio, K. C., Leonard, F., Talin, A. A., Armstrong, A. M., Feezell, D.

“…Here, we report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O…”
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