Search Results - "Celi, D."

Cryogenic Characterization of the High Frequency and Noise Performance of SiGe HBTs From DC to 70 GHz and Down to 2 K by Bonen, S., Cooke, G., Jager, T., Bharadwaj, A., Tripathi, S. Pati, Celi, D., Chevalier, P., Schvan, P., Voinigescu, S. P.

“…The high frequency and noise performance (<inline-formula> <tex-math notation="LaTeX">T_{\mathrm {MIN}} </tex-math></inline-formula>, NF MIN , <inline-formula>…”
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Impact of Hot Carrier Degradation on the Performances of Current Mirrors based on a 55 nm BiCMOS Integrated Circuit Technology by Mukherjee, C., Couret, M., Maneux, C., Celi, D.

“…This paper presents reliability assessment of basic integrated circuits designed for analog and RF applications based on extensive circuit simulations using…”
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Characterization and Modeling of an SiGe HBT Technology for Transceiver Applications in the 100-300-GHz Range by Voinigescu, S. P., Dacquay, E., Adinolfi, V., Sarkas, I., Balteanu, A., Tomkins, A., Celi, D., Chevalier, P.

“…This paper describes a methodology for extracting and verifying the high-frequency model parameters of the HICUM L0 and L2 models of a silicon-germanium HBT…”
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Peripheral expression of key regulatory kinases in Alzheimer's disease and Parkinson's disease by Armentero, M.T, Sinforiani, E, Ghezzi, C, Bazzini, E, Levandis, G, Ambrosi, G, Zangaglia, R, Pacchetti, C, Cereda, C, Cova, E, Basso, E, Celi, D, Martignoni, E, Nappi, G, Blandini, F

“…Abstract Alteration of key regulatory kinases may cause aberrant protein phosphorylation and aggregation in Alzheimer's disease (AD) and Parkinson's disease…”
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Pharmacogenomic update on multiple sclerosis: a focus on actual and new therapeutic strategies by Foti Cuzzola, V, Palella, E, Celi, D, Barresi, M, Giacoppo, S, Bramanti, P, Marino, S

“…Multiple sclerosis (MS) is an inflammatory and demyelinating disease of central nervous system comprising several subtypes. Pharmacological treatment involves…”
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Targeting Toll-like receptors: Emerging therapeutics for multiple sclerosis management by Gambuzza, M, Licata, N, Palella, E, Celi, D, Foti Cuzzola, V, Italiano, D, Marino, S, Bramanti, P

“…Abstract Toll-like receptors (TLR) are important innate immune proteins for the identification and clearance of invading pathogen. TLR signal through adaptor…”
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230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications by Chevalier, P., Fellous, C., Rubaldo, L., Pourchon, F., Pruvost, S., Beerkens, R., Saguin, F., Zerounian, N., Barbalat, B., Lepilliet, S., Dutartre, D., Celi, D., Telliez, I., Gloria, D., Aniel, F., Danneville, F., Chantre, A.

“…This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology. The technical choices such as the…”
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Compact Layout and Bias-Dependent Base-Resistance Modeling for Advanced SiGe HBTs by Schroter, M., Krause, J., Lehmann, S., Celi, D.

“…In this paper, an improved and extended set of physics-based analytical equations for describing the external and internal base resistance of silicon-germanium…”
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Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance by Vu, V. T., Rosenbaum, T., Saxod, O., Celi, D., Zimmer, T., Fregonese, S., Chevalier, P.

“…The objective of this paper is to predict the main electrical characteristics of SiGe NPN HBTs, like the transit frequency fT, internal capacitances and…”
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Calibration of 1D doping profiles of SiGe HBTs by Rosenbaum, T., Saxod, O., Vu, V. T., Celi, D., Chevalier, P., Schroter, M., Maneux, C.

“…Due to the miniaturization in microelectronics and corresponding steep doping profiles, it is increasingly difficult to obtain reliable results from SIMS…”
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A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results by Fregonese, S., Lehmann, S., Zimmer, T., Schroter, M., Celi, D., Ardouin, B., Beckrich, H., Brenner, P., Kraus, W.

“…A compact bipolar transistor model was presented in Part I that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of…”
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A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions by Mukherjee, C., Marc, F., Couret, M., Fischer, G.G., Jaoul, M., Céli, D., Aufinger, K., Zimmer, T., Maneux, C.

“…•A new physical and accurate aging compact model for HCI in modern SiGe HBTs.•Developed based on Reaction Diffusion theory and Fick’s law of diffusion.•The…”
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Scalable Approach for HBT's Base Resistance Calculation by Raya, C., Pourchon, F., Zimmer, T., Celi, D., Chevalier, P.

“…This paper presents a detailed investigation of the dual base method for intrinsic and extrinsic HBT's base resistance extraction that is of utmost importance…”
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Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands by Gauthier, A., Brezza, E., Montagne, A., Guitard, N., Goncalves, J. Azevedo, Buczko, M., Jan, S., Derrier, N., Celi, D., Deglise-Favre, C., Ma, J., Audouin, H., Deprat, F., Ristoiu, I D., Berthier, L., Clement, L., Grelaud, B., Rougier, C., Chevalier, P.

“…This paper discusses technological choices and resulting performances of an innovative Si/SiGe HBT architecture developed for a new 55-nm BiCMOS platform from…”
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A scalable substrate network for compact modelling of deep trench insulated HBT by Fregonese, S., Celi, D., Zimmer, T., Maneux, C., Sulima, P.Y.

“…3D Physical simulation has been used to analyse the impact of substrate parasitic elements on HBT electrical characteristics. A geometry scalable SPICE model…”
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In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz by Cabbia, M., Deng, M., Fregonese, S., Matos, M. De, Celi, D., Zimmer, T.

“…In this paper, we present an in-situ thru-reflect-line (TRL) calibration and de-embedding kit that sets the reference plane in close proximity to the device…”
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HICUM/L2: Extensions over the last decade by Schruter, M., Pawlak, A., Mukherjee, A., Celi, D., Krattenmacher, M.

“…A concise overview on the features of the most recently released version 3.0.0 of the industry standard compact bipolar transistor model HICUM/L2 is provided…”
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A Nodal Model Dedicated to Self-Heating and Thermal Coupling Simulations by Beckrich-Ros, H., Ortolland, S., Pache, D., Celi, D., Gloria, D., Zimmer, T.

“…Both reduction in device sizes and enhanced increase in current densities lead to concern about the impact of the self-heating effect on device electrical…”
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PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications by Chevalier, P., Gianesello, F., Pallotta, A., Goncalves, J. Azevedo, Bertrand, G., Borrel, J., Boissonnet, L., Brezza, E., Buczko, M., Canderle, E., Celi, D., Cremer, S., Derrier, N., Diouf, C., Durand, C., Foussadier, F., Garcia, P., Guitard, N., Fleury, A., Gauthier, A., Kermarrec, O., Lajoinie, J., Legrand, C.A., Milon, V., Monsieur, F., Mourier, Y., Muller, D., Ney, D., Paulin, R., Pelloux, N., Renard, C., Rellier, M.L., Scheer, P., Sicard, I., Vulliet, N., Juge, A., Granger, E., Gloria, D., Uginet, J., Garchery, L., Paillardet, F.

“…While 5G wireless networks are currently deployed around the world, preliminary research activities have begun to look beyond 5G and conceptualize 6G standard…”
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A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives by Chevalier, P., Avenier, G., Ribes, G., Montagne, A., Canderle, E., Celi, D., Derrier, N., Deglise, C., Durand, C., Quemerais, T., Buczko, M., Gloria, D., Robin, O., Petitdidier, S., Campidelli, Y., Abbate, F., Gros-Jean, M., Berthier, L., Chapon, J. D., Leverd, F., Jenny, C., Richard, C., Gourhant, O., De-Buttet, C., Beneyton, R., Maury, P., Joblot, S., Favennec, L., Guillermet, M., Brun, P., Courouble, K., Haxaire, K., Imbert, G., Gourvest, E., Cossalter, J., Saxod, O., Tavernier, C., Foussadier, F., Ramadout, B., Bianchini, R., Julien, C., Ney, D., Rosa, J., Haendler, S., Carminati, Y., Borot, B.

“…This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The technology features Low Power (LP) and…”
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