Search Results - "Celano, Umberto"

Electrical tuning of phase-change antennas and metasurfaces by Wang, Yifei, Landreman, Patrick, Schoen, David, Okabe, Kye, Marshall, Ann, Celano, Umberto, Wong, H.-S. Philip, Park, Junghyun, Brongersma, Mark L.

“…The success of semiconductor electronics is built on the creation of compact, low-power switching elements that offer routing, logic and memory functions. The…”
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Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy by Collins, Liam, Celano, Umberto

“…Hafnium oxide (HfO2)-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon…”
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Machine Learning in Nanoscience: Big Data at Small Scales by Brown, Keith A, Brittman, Sarah, Maccaferri, Nicolò, Jariwala, Deep, Celano, Umberto

“…Recent advances in machine learning (ML) offer new tools to extract new insights from large data sets and to acquire small data sets more effectively…”
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Exciton resonance tuning of an atomically thin lens by van de Groep, Jorik, Song, Jung-Hwan, Celano, Umberto, Li, Qitong, Kik, Pieter G., Brongersma, Mark L.

“…The highly engineerable scattering properties of resonant optical antennas underpin the operation of metasurface-based flat optics. Thus far, the choice of…”
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Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory by Celano, Umberto, Goux, Ludovic, Degraeve, Robin, Fantini, Andrea, Richard, Olivier, Bender, Hugo, Jurczak, Malgorzata, Vandervorst, Wilfried

“…Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic. Currently accepted…”
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Nano-positive up negative down in binary oxide ferroelectrics by Gomez, Andres, Celano, Umberto

“…Ferroelectric HfO2 and ZrO2-based materials are promising candidates for next-generation ferroelectric devices, but their characterization is challenging due…”
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Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices by Celano, Umberto, Goux, Ludovic, Belmonte, Attilio, Opsomer, Karl, Franquet, Alexis, Schulze, Andreas, Detavernier, Christophe, Richard, Olivier, Bender, Hugo, Jurczak, Malgorzata, Vandervorst, Wilfried

“…The basic unit of information in filamentary-based resistive switching memories is physically stored in a conductive filament. Therefore, the overall…”
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Filament observation in metal-oxide resistive switching devices by Celano, Umberto, Yin Chen, Yang, Wouters, Dirk J., Groeseneken, Guido, Jurczak, Malgorzata, Vandervorst, Wilfried

“…Metal-oxide-based resistive random access memory (RRAM) is a predominant candidate for future non-volatile memories. In this Letter, we report on an innovative…”
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Scanning probe microscopy in the age of machine learning by Rahman Laskar, Md Ashiqur, Celano, Umberto

“…Scanning probe microscopy (SPM) has revolutionized our ability to explore the nanoscale world, enabling the imaging, manipulation, and characterization of…”
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Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory by Celano, Umberto, Op de Beeck, Jonathan, Clima, Sergiu, Luebben, Michael, Koenraad, Paul M, Goux, Ludovic, Valov, Ilia, Vandervorst, Wilfried

“…A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal–insulator–metal (MIM)…”
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Mesoscopic physical removal of material using sliding nano-diamond contacts by Celano, Umberto, Hsia, Feng-Chun, Vanhaeren, Danielle, Paredis, Kristof, Nordling, Torbjörn E. M., Buijnsters, Josephus G., Hantschel, Thomas, Vandervorst, Wilfried

“…Wear mechanisms including fracture and plastic deformation at the nanoscale are central to understand sliding contacts. Recently, the combination of…”
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Adaptive Scalpel Scanning Probe Microscopy for Enhanced Volumetric Sensing in Tomographic Analysis by Laskar, Md Ashiqur Rahman, Leonetti, Giuseppe, Milano, Gianluca, Novotný, Ondřej, Neuman, Jan, Tongay, Sefaattin, Celano, Umberto

“…Controlling nanoscale tip‐induced material removal is crucial for achieving atomic‐level precision in tomographic sensing with atomic force microscopy (AFM)…”
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Editorial: Advanced characterization methods for HfO2/ZrO2-based ferroelectrics by Lomenzo, Patrick D., Celano, Umberto, Kämpfe, Thomas, McMitchell, Sean R. C.

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In-situ electrical characterization of MOSFET transistors using AFM-in-SEM solution by Novotny, Ondrej, Strakos, Libor, Patocka, Marek, Schanilec, Vojtech, Hegrova, Veronika, Celano, Umberto, Vystavel, Tomas, Neuman, Jan

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Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS by Op de Beeck, Jonathan, Labyedh, Nouha, Sepúlveda, Alfonso, Spampinato, Valentina, Franquet, Alexis, Conard, Thierry, Vereecken, Philippe M, Vandervorst, Wilfried, Celano, Umberto

“…The continuous demand for improved performance in energy storage is driving the evolution of Li-ion battery technology toward emerging battery architectures…”
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Nanoscale 3D characterisation of soft organic material using conductive scanning probe tomography by Chintala, Ravi Chandra, Wood, Sebastian, Blakesley, James C., Favia, Paola, Celano, Umberto, Paredis, Kristof, Vandervorst, Wilfried, Castro, Fernando A.

“…The 3D nanostructure of organic materials plays a key role in their performance in a broad range of fields, from life sciences to electronics. However,…”
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Oil as an Enabler for Efficient Materials Removal in Three-Dimensional Scanning Probe Microscopy Applications by Noël, Céline, Wouters, Lennaert, Paredis, Kristof, Celano, Umberto, Hantschel, Thomas

“…The ever-increasing complexity of semiconductor devices requires innovative three-dimensional materials characterization techniques for confined volumes…”
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Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides by Nagashima, Kazuki, Yanagida, Takeshi, Kanai, Masaki, Celano, Umberto, Rahong, Sakon, Meng, Gang, Zhuge, Fuwei, He, Yong, Ho Park, Bae, Kawai, Tomoji

“…We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2−x, YSZ, and…”
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Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory by Chang, Ting-Yu, Wang, Kuan-Chi, Liu, Hsien-Yang, Hseun, Jing-Hua, Peng, Wei-Cheng, Ronchi, Nicolò, Celano, Umberto, Banerjee, Kaustuv, Van Houdt, Jan, Wu, Tian-Li

“…In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering…”
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Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges by Celano, Umberto, Gomez, Andres, Piedimonte, Paola, Neumayer, Sabine, Collins, Liam, Popovici, Mihaela, Florent, Karine, McMitchell, Sean R. C., Favia, Paola, Drijbooms, Chris, Bender, Hugo, Paredis, Kristof, Di Piazza, Luca, Jesse, Stephen, Van Houdt, Jan, van der Heide, Paul

“…The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching…”
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