Search Results - "Cauwet, F."

Fabrication of BN membranes containing high density of cylindrical pores using an elegant approach by Marichy, C., Salles, V., Jaurand, X., Etiemble, A., Douillard, T., Faugier-Tovar, J., Cauwet, F., Brioude, A.

“…A high quality BN membrane with millions of through cylindrical pores is simply fabricated using a double inversion approach combining atomic layer deposition…”
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Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport by Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Thierry-Jebali, N., Brosselard, P., Planson, D., Brylinski, C., Ferro, G.

“…The present study reports the fabrication of localized p-doped silicon carbide zones on 4H-SiC substrate. Selective epitaxial growth of p-doped SiC was…”
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3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt by Lorenzzi, J, Lazar, M, Tournier, D, Jegenyes, N, Carole, D, Cauwet, F, Ferro, G

“…In this work, we report on the use of patterned 4H–SiC(0001) substrates for the heteroepitaxial growth of 3C–SiC by vapor–liquid–solid (VLS) mechanism using…”
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Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase by Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Planson, D., Brylinski, C., Ferro, G.

“…This works deals with the localized growth of SiC on monocrystalline (100) diamond surface. It describes an attempt of selective epitaxy using…”
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Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition by Soueidan, M., Ferro, G., Nsouli, B., Cauwet, F., Dazord, J., Younes, G., Monteil, Y.

“…Epitaxial 3C-SiC(1 1 1) films were grown on 6H-SiC(0 0 0 1) Si face on axis substrates by chemical vapor deposition under H 2, SiH 4 and C 3H 8 in a cold wall…”
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Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism by Lorenzzi, J., Zoulis, G., Marinova, M., Kim-Hak, O., Sun, J.W., Jegenyes, N., Peyre, H., Cauwet, F., Chaudouët, P., Soueidan, M., Carole, D., Camassel, J., Polychroniadis, E.K., Ferro, G.

“…We report on a comparative investigation of the incorporation of group III, IV and V impurities in 3C–SiC heteroepitaxial layers grown by the…”
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Low-temperature homoepitaxial growth of α-SiC on on-axis (0 0 0 1) substrate by vapor–liquid–solid mechanism by Soueidan, M., Ferro, G., Nsouli, B., Cauwet, F., Mollet, L., Jacquier, C., Younes, G., Monteil, Y.

“…Vapor–liquid–solid mechanism was used for growing epitaxial SiC layers on on-axis 6H–SiC and 4H–SiC substrates. By feeding Al 70Si 30 melts with propane,…”
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Study of the interaction between graphite and Al-Si melts for the growth of crystalline silicon carbide by JACQUIER, C, CHAUSSENDE, D, FERRO, G, VIALA, J. C, CAUWET, F, MONTEIL, Y

“…The chemical interaction between Al-Si melts of different compositions and graphite was investigated in order to clarify the mechanism of spontaneous growth of…”
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Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapour deposition by FERRO, G, MONTEIL, Y, VINCENT, H, CAUWET, F, BOUIX, J, DURUPT, P, OLIVIER, J, BISARO, R

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Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP by Pautet, C., Abraham, P., Dazord, J., Favre, R., Cauwet, F., Monteil, Y., Bouix, J., Ougazzaden, A., Rao, E. V. K., Mircea, A.

“…We have investigated the use of trimethylarsenic (TMAs) as an alternative to arsine in the metalorganic vapor phase epitaxy (MOVPE) of device quality InGaAs…”
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Fabrication of BN membranes containing high density of cylindrical pores using an elegant approachElectronic supplementary information (ESI) available: Measurement of specific surface area of the BN membrane: adsorption/desorption isotherm at 77 K using N2 and the corresponding BET plot of the BN membrane; calculation of the specific surface area of PC and dense BN membranes. See DOI: 10.1039/c7ra03808a by Marichy, C, Salles, V, Jaurand, X, Etiemble, A, Douillard, T, Faugier-Tovar, J, Cauwet, F, Brioude, A

“…A high quality BN membrane with millions of through cylindrical pores is simply fabricated using a double inversion approach combining atomic layer deposition…”
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Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase by Berckmans, Stéphane, Auvray, Laurent, Ferro, Gabriel, Cauwet, François, Soulière, Véronique, Collard, Emmanuel, Brylinski, Christian

“…The crystal growth of 3C-SiC onto silicon substrate by Vapor–Liquid–Solid (VLS) transport, where a SiGe liquid phase is fed with propane, has been…”
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Nucleation of 3C–SiC on 6H–SiC from a liquid phase by Soueidan, Maher, Ferro, Gabriel, Kim-Hak, Olivier, Robaut, Florence, Dezellus, Olivier, Dazord, Jacques, Cauwet, François, Viala, Jean-Claude, Nsouli, Bilal

“…The aim of this work is to elucidate the mechanism involved in the 3C–SiC formation during growth by a vapor–liquid–solid mechanism on 6H–SiC substrate…”
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Incorporation of group, IV and V elements in 3C-SiC(1 1 1) layers grown by the vapour-liquid-solid mechanism by Lorenzzi, J, Zoulis, G, Marinova, M, Kim-Hak, O, Sun, J W, Jegenyes, N, Peyre, H, Cauwet, F, Chaudouet, P, Soueidan, M, Carole, D, Camassel, J, Polychroniadis, E K, Ferro, G

“…We report on a comparative investigation of the incorporation of group, IV and V impurities in 3C-SiC heteroepitaxial layers grown by the vapour-liquid-solid…”
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A comprehensive study of SiC growth processes in a VPE reactor by Chassagne, Thierry, Ferro, Gabriel, Chaussende, Didier, Cauwet, François, Monteil, Yves, Bouix, Jean

“…We performed an experimental study of the effect of the gas phase composition on the growth mechanism of 3C-SiC on Si(100) by atmospheric-pressure vapour phase…”
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On the growth of 4H–SiC by low-temperature liquid phase epitaxy in Al rich Al–Si melts by Jacquier, Christophe, Ferro, Gabriel, Cauwet, François, Viala, Jean Claude, Younes, Ghassan, Monteil, Yves

“…The growth of 4H–SiC by low-temperature liquid phase epitaxy was studied in Al–Si melts. The temperature ranged from 1000°C to 1200°C. Some problems, which…”
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SiC Homoepitaxial Growth at Low Temperature by Vapor−Liquid−Solid Mechanism in Al−Si Melt by Jacquier, Christophe, Ferro, Gabriel, Cauwet, François, Chaussende, D, Monteil, Yves

“…Homoepitaxial growth of SiC was successfully performed at a temperature as low as 1100 °C via a vapor−liquid−solid (VLS) mechanism where propane feeds an Al−Si…”
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