Search Results - "Castellani, Niccolo'"

In situ learning using intrinsic memristor variability via Markov chain Monte Carlo sampling by Dalgaty, Thomas, Castellani, Niccolo, Turck, Clément, Harabi, Kamel-Eddine, Querlioz, Damien, Vianello, Elisa

“…Resistive memory technologies could be used to create intelligent systems that learn locally at the edge. However, current approaches typically use learning…”
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Bringing uncertainty quantification to the extreme-edge with memristor-based Bayesian neural networks by Bonnet, Djohan, Hirtzlin, Tifenn, Majumdar, Atreya, Dalgaty, Thomas, Esmanhotto, Eduardo, Meli, Valentina, Castellani, Niccolo, Martin, Simon, Nodin, Jean-François, Bourgeois, Guillaume, Portal, Jean-Michel, Querlioz, Damien, Vianello, Elisa

“…Safety-critical sensory applications, like medical diagnosis, demand accurate decisions from limited, noisy data. Bayesian neural networks excel at such tasks,…”
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Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices by Térébénec, Damien, Castellani, Niccolo, Bernier, Nicolas, Sever, Vitomir, Kowalczyk, Philippe, Bernard, Mathieu, Cyrille, Marie-Claire, Tran, Nguyet-Phuong, Hippert, Françoise, Noé, Pierre

“…GeTe/Sb2Te3 superlattices (SLs) obtained by sputtering are integrated in phase‐change memory (PCM) devices with a “wall structure”. The high structural quality…”
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Ex Situ Transfer of Bayesian Neural Networks to Resistive Memory‐Based Inference Hardware by Dalgaty, Thomas, Esmanhotto, Eduardo, Castellani, Niccolo, Querlioz, Damien, Vianello, Elisa

“…Neural networks cannot typically be trained locally in edge‐computing systems due to severe energy constraints. It has, therefore, become commonplace to train…”
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Innovative Low-Power Self-Nanoconfined Phase-Change Memory by Serra, Anna Lisa, Lefevre, Gauthier, Bourgeois, Guillaume, Sabbione, Chiara, Castellani, Niccolo', Cueto, Olga, Cyrille, Marie-Claire, Bernard, Mathieu, Garrione, Julien, Bernier, Nicolas, Vallee, Christophe, David, Sylvain, Charpin-Nicolle, Christelle, Navarro, Gabriele, Nowak, Etienne

“…In this article, we demonstrate at array level and in industrial-like devices, the extreme scaling down to nanometric dimensions of the phase-change memory…”
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Investigation of the Turn-ON of T-RAM Cells Under Transient Conditions by Mulaosmanovic, Halid, Compagnoni, Christian Monzio, Castellani, Niccolo, Paolucci, Giovanni M., Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S., Benvenuti, Augusto

“…This paper presents an experimental investigation of the turn-ON of nanoscale T-RAM cells under the transient conditions given by the depletion of the p-base…”
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Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy by Esmanhotto, Eduardo, Hirtzlin, Tifenn, Bonnet, Djohan, Castellani, Niccolo, Portal, Jean-Michel, Querlioz, Damien, Vianello, Elisa

“…Crossbars of resistive memories, or memristors, provide a road to reduce the energy consumption of artificial neural networks, by naturally implementing…”
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Working Principles of a DRAM Cell Based on Gated-Thyristor Bistability by Mulaosmanovic, Halid, Paolucci, Giovanni M., Compagnoni, Christian Monzio, Castellani, Niccolò, Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S., Benvenuti, Augusto

“…This letter discusses the working principles of a memory cell exploiting the bistability of a single nanoscale gated-thyristor to achieve high-performance DRAM…”
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Implementation of binarized neural networks immune to device variation and voltage drop employing resistive random access memory bridges and capacitive neurons by Ezzadeen, Mona, Majumdar, Atreya, Valorge, Olivier, Castellani, Niccolo, Gherman, Valentin, Regis, Guillaume, Giraud, Bastien, Noel, Jean-Philippe, Meli, Valentina, Bocquet, Marc, Andrieu, Francois, Querlioz, Damien, Portal, Jean-Michel

“…Resistive Random Access Memories (ReRAM) arrays provides a promising basement to deploy neural network accelerators based on near or in memory computing…”
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Early versus late tracheostomy for traumatic brain injury: a systematic review and meta-analysis by Bertini, Pietro, Marabotti, Alberto, Paternoster, Gianluca, Sangalli, Fabio, Costanzo, Diego, Isirdi, Alessandro, Romani, Matteo, Castellani Nicolini, Niccolò, Brizzi, Giulia, Checchi, Michele, Guarracino, Fabio

“…Tracheostomy is the most frequent bedside surgical procedure performed on patients with traumatic brain injury who require mechanical ventilation. To compare…”
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Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors by Paolucci, Giovanni M., Compagnoni, Christian Monzio, Castellani, Niccolo, Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S., Benvenuti, Augusto

“…This letter presents a detailed experimental investigation of the current-voltage characteristics of deca-nanometer gated-thyristors, highlighting that strong…”
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DenRAM: neuromorphic dendritic architecture with RRAM for efficient temporal processing with delays by D’Agostino, Simone, Moro, Filippo, Torchet, Tristan, Demirağ, Yiğit, Grenouillet, Laurent, Castellani, Niccolò, Indiveri, Giacomo, Vianello, Elisa, Payvand, Melika

“…Neuroscience findings emphasize the role of dendritic branching in neocortical pyramidal neurons for non-linear computations and signal processing. Dendritic…”
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Neuromorphic object localization using resistive memories and ultrasonic transducers by Moro, Filippo, Hardy, Emmanuel, Fain, Bruno, Dalgaty, Thomas, Clémençon, Paul, De Prà, Alessio, Esmanhotto, Eduardo, Castellani, Niccolò, Blard, François, Gardien, François, Mesquida, Thomas, Rummens, François, Esseni, David, Casas, Jérôme, Indiveri, Giacomo, Payvand, Melika, Vianello, Elisa

“…Real-world sensory-processing applications require compact, low-latency, and low-power computing systems. Enabled by their in-memory event-driven computing…”
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Author Correction: DenRAM: neuromorphic dendritic architecture with RRAM for efficient temporal processing with delays by D’Agostino, Simone, Moro, Filippo, Torchet, Tristan, Demirağ, Yiğit, Grenouillet, Laurent, Castellani, Niccolò, Indiveri, Giacomo, Vianello, Elisa, Payvand, Melika

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Reliability investigation of T-RAM cells for DRAM applications by Mulaosmanovic, Halid, Paolucci, Giovanni M., Compagnoni, Christian Monzio, Castellani, Niccoló, Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Viganó, Sara, Conti, Anna M., Righetti, Niccolo, Spinelli, Alessandro S., Lacaita, Andrea L., Benvenuti, Augusto, Grossi, Alessandro

“…In this work, we present a reliability investigation of T-RAM cells, considering their read failure, data retention and endurance. Experimental results on…”
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Narrow Heater Bottom Electrode‐Based Phase Change Memory as a Bidirectional Artificial Synapse by La Barbera, Selina, Ly, Denys R. B., Navarro, Gabriele, Castellani, Niccolò, Cueto, Olga, Bourgeois, Guillaume, De Salvo, Barbara, Nowak, Etienne, Querlioz, Damien, Vianello, Elisa

“…Phase change memory can provide a remarkable artificial synapse for neuromorphic systems, as it features excellent reliability and can be used as an analog…”
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Multilayered Sb-Rich GeSbTe Phase-Change Memory for Best Endurance and Reduced Variability by Lama, Giusy, Bernard, Mathieu, Bourgeois, Guillaume, Garrione, Julien, Meli, Valentina, Castellani, Niccolo, Sabbione, Chiara, Prazakova, Lucie, Fernandez Rodas, Diana-Stephany, Nolot, Emmanuel, Cyrille, Marie Claire, Andrieu, Francois, Navarro, Gabriele

“…Sb-rich GeSbTe-based phase-change memories (PCMs) were studied in the past years for their high switching speed to target storage class memory (SCM)…”
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Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices-Part II: Spectroscopic Implications by Monzio Compagnoni, Christian, Castellani, Niccolò, Mauri, Aurelio, Spinelli, Alessandro S., Lacaita, Andrea L.

“…This paper investigates the impact of 3-D electrostatics and atomistic doping on the spectroscopic analysis of random telegraph noise (RTN) traps in nanoscale…”
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Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices-Part I: Physical Investigation by Castellani, Niccolò, Monzio Compagnoni, Christian, Mauri, Aurelio, Spinelli, Alessandro S., Lacaita, Andrea L.

“…This paper presents a detailed simulation analysis of the impact of 3-D electrostatics and atomistic doping on the variability of the random telegraph noise…”
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Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs by Adamu-Lema, F., Monzio Compagnoni, Christian, Amoroso, S. M., Castellani, N., Gerrer, L., Markov, S., Spinelli, A. S., Lacaita, A. L., Asenov, A.

“…This paper investigates the limitations to the accuracy and the main issues of the spectroscopic analyses of random telegraph noise (RTN) traps in nanoscale…”
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