Search Results - "Cassette, S."

Detailed analysis by Fabry-Perot method of slab photonic crystal line-defect waveguides and cavities in aluminium-free material system by Combrié, S, Weidner, E, DeRossi, A, Bansropun, S, Cassette, S, Talneau, A, Benisty, H

“…A single-line-defect low-loss photonic crystal waveguide based on a perforated GaAs membrane in an aluminium-free material system is demonstrated. The GaInP…”
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Nickel based ohmic contacts on SiC by Marinova, Ts, Kakanakova-Georgieva, A., Krastev, V., Kakanakov, R., Neshev, M., Kassamakova, L., Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C., Pecz, B., Radnoczi, G., Vincze, Gy

“…We have compared the chemical and structural properties of Ni/SiC and Ni 2Si/SiC interfaces. In the case of Ni/SiC, the contact formation is initiated by the…”
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Characterization of ohmic and Schottky contacts on SiC by Kakanakova-Georgieva, A., Marinova, Ts, Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C.

“…The interface chemistry of nickel and tungsten based contacts on SiC has been investigated by XPS on as-deposited samples and after contact formation. After…”
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MBE growth of ALGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performances by Cordier, Y., Semond, F., Lorenzini, P., Grandjean, N., Natali, F., Damilano, B., Massies, J., Hoël, V., Minko, A., Vellas, N., Gaquière, C., DeJaeger, J.C., Dessertene, B., Cassette, S., Surrugue, M., Adam, D., Grattepain, J-C., Aubry, R., Delage, S.L.

“…In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The…”
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TEM study of Ni and Ni2Si ohmic contacts to SiC by Pécz, B., Radnóczi, G., Cassette, S., Brylinski, C., Arnodo, C., Noblanc, O.

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Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability by Cassette, S., Delage, S.L., Chartier, E., Floriot, D., Poisson, M.A., Garcia, J.C., Grattepain, C., Mimila Arroyo, J., Plana, R., Bland, S.W.

“…We report the result of investigation on hydrogen effects on GaInP/GaAs HBT structures originating from different MOCVD and CBE suppliers. It is demonstrated…”
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Interface chemistry of WN/4H–SiC structures by Kakanakova-Georgieva, A, Kassamakova, L, Marinova, Ts, Kakanakov, R, Noblanc, O, Arnodo, C, Cassette, S, Brylinski, C

“…The interface chemistry of WN/4H–SiC structures has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS investigations have been performed on…”
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GaAs-based materials for heterojunction bipolar transistor's: reliability results and MMIC applications by di Forte-Poisson, M.A., Delage, S.L., Cassette, S.

“…This paper reports the present status of GaAs based-heterojunction bipolar transistor (HBT) under development at Thales. We have developed a complete…”
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XPS characterization of tungsten-based contact layers on 4H–SiC by Kakanakova-Georgieva, A, Marinova, Ts, Noblanc, O, Arnodo, C, Cassette, S, Brylinski, C

“…Annealed W (WN)/4H–SiC interfaces have been compared on the basis of X-ray photoelectron spectroscopy (XPS) studies. The 1200°C annealed W (WN)/4H–SiC…”
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Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer by di Forte-Poisson, M.-A., Bernard, S., Teisseire, L., Brylinski, C., Cassette, S., di Persio, J.

“…This paper reports on the investigation of GaInP/GaAs HBT-advanced structures with well-controlled strained base layers based on GaAs : C/GaInAs : uid…”
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Pulse characterization of trapping and thermal effects of microwave GaN power FETs by Augaudy, S., Quere, R., Teyssier, J.P., Di Forte-Poisson, M.A., Cassette, S., Dessertenne, B., Delage, S.L.

“…An experimental characterization of GaN FETs is given in this paper. A pulsed I-V/pulsed S-parameters measurement set-up is used to investigate the trapping…”
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Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT by Sydlo, C., Mottet, B., Ganis, H., Hartnagel, H.L., Krozer, V., Delage, S.L., Cassette, S., Chartier, E., Floriot, D., Bland, S.

“…Reliability relevant defect mechanisms with HBT are detected and analysed using pulsed electrical stress. Different degradation mechanisms are excited by…”
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Electrical properties of distributed electron cyclotron resonance plasma-deposited SiO2-InP diodes by PLAIS, F, AGIUS, B, PROUST, N, CASSETTE, S, RAVEL, G, PUECH, M

“…Low-temperature deposition (room temperature, RT-250 °C) of high-resistivity SiO2 layers has been successfully developed on InP substrates. Complete electrical…”
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Interface chemistry of a Ti/Au/Pt/Ti/SiC structure by Kakanakova-Georgieva, A., Marinova, Ts, Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C.

“…X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical reactions and diffusion processes at Ti/Au/Pt/Ti/SiC interfaces for as deposited and…”
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SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices by Aubry, R., Jacquet, J.-C., Weaver, J., Durand, O., Dobson, P., Mills, G., di Forte-Poisson, M.-A., Cassette, S., Delage, S.-L.

“…Channel temperature has a strong impact on the performance of a microwave power transistor. In particular, it has a strong influence on the power gain,…”
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Thermal expansion imaging and finite element simulation of hot lines in high power AlGaN HEMT devices by Dietzel, D., Meckenstock, R., Chotikaprakhan, S., Bolte, J., Pelzl, J., Aubry, R., Jacquet, J.C., Cassette, S.

“…The temperature and thermo-elastic expansion of the heated area in a high power, high electron mobility transistor (HEMT) device have been investigated by…”
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Fast physics based wafer-level reliability characterisation by Krozer, V., Schussler, M., Ganis, H., Brandt, M., Sydlo, C., Motter, B., Cassette, S., Delage, S., Hartnagel, H.L.

“…A fast method for reliability evaluation and wafer level reliability measurements is presented. This method requires a physics-of-failure based approach. We…”
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High efficiency InGaP/GaAs HBT power amplifiers by Blanck, H., Delage, S.L., Cassette, S., Floriot, D., Chartier, E., diForte-Poisson, M.A., Watrin, E., Bourne, P.

“…The goal of this paper is to give an overview of the performances of InGaP HBTs for X-band power applications. A reminder of the peculiarities concerning this…”
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Interface chemistry of a Ti/Au/Pt/Ti/SiC structure by Marinova, T, Kakanakova-Georgieva, A, Noblanc, O, Arnodo, C, Cassette, S, Brylinski, C

“…X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical reactions and diffusion processes at Ti/Au/Pt/Ti/SiC interfaces for as deposited and…”
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TEM study of Ni and Ni 2Si ohmic contacts to SiC by Pécz, B., Radnóczi, G., Cassette, S., Brylinski, C., Arnodo, C., Noblanc, O.

“…The structure of Ni and Si Ni contacts to SiC was studied by transmission electron microscopy. Annealed Ni SiC contacts showed ohmic behaviour, but Ni proved…”
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