Search Results - "Case, F. C."

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    HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy by MITRA, P, CASE, F. C, GLASS, H. L, SPEZIALE, V. M, FLINT, J. P, TOBIN, S. P, NORTON, P. W

    Published in Journal of electronic materials (01-06-2001)
    “…We report the growth of HgCdTe on (552)B CdZnTe by metalorganic vapor phase epitaxy (MOVPE). The (552) plane is obtained by 180 degree rotation of the (211)…”
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    Conference Proceeding Journal Article
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    Improved Arsenic Doping in Metalorganic Chemical Vapor Deposition of HgCdTe and in situ Growth of High Performance Long Wavelength Infrared Photodiodes by Mitra, P, Tyan, Y L, Case, F C, Starr, R, Reine, M B

    Published in Journal of electronic materials (01-08-1996)
    “…Controlled and effective p-type doping is a key ingredient for in situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a…”
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    Journal Article
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    Influence of ion beam parameters on the electrical and optical properties of ion‐assisted reactively evaporated vanadium dioxide thin films by Case, F. C.

    “…Large reductions in the phase transition temperature of vanadium dioxide thin films have been achieved in the past by doping with elements such as tungsten or…”
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    Journal Article
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    Multispectral long-wavelength quantum-well infrared photodetectors by Mitra, P., Case, F. C., McCurdy, J. H., Zaidel, S. A., Claiborne, L. T.

    Published in Applied physics letters (12-05-2003)
    “…Multispectral detector arrays for application in the 8–11 μm spectral band have been fabricated from GaAs/AlGaAs multiple quantum-well (MQW) materials. For…”
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    Journal Article
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    MOVPE growth of HgCdTe for high performance 3-5 mu m photodiodes operating at 100-180 K by Mitra, P, Case, F C, Reine, M B, Parodos, T, Tobin, S P, Norton, P W

    Published in Journal of electronic materials (01-01-1999)
    “…New results are reported on the growth of high performance medium wavelength infrared (3-5 mu m) (MWIR) HgCdTe photodiodes in the three-layer P-n-N…”
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    Journal Article
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    Enhanced quantum well infrared photodetector with novel multiple quantum well grating structure by Schimert, T. R., Barnes, S. L., Brouns, A. J., Case, F. C., Mitra, P., Claiborne, L. T.

    Published in Applied physics letters (13-05-1996)
    “…An enhanced quantum well infrared photodetector (EQWIP) with lower dark current and improved performance relative to a conventional QWIP is described. Dark…”
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    Journal Article
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    Donor doping in metalorganic chemical vapor deposition of HgCdTe using ethyl iodide by Mitra, P., Tyan, Y. L., Schimert, T. R., Case, F. C.

    Published in Applied physics letters (11-07-1994)
    “…Highly effective donor doping during metalorganic chemical vapor deposition interdiffused multilayer growth of Hg1−xCdxTe is demonstrated using a novel…”
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    Journal Article
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    Doping in MOVPE of HgCdTe: orientation effects and growth of high performance IR photodiodes by Mitra, P., Case, F.C., Reine, M.B., Starr, R., Weiler, M.H.

    Published in Journal of crystal growth (01-01-1997)
    “…Extrinsic doping in MOVPE of HgCdTe has been a critical issue for the successful growth of high performance detector devices. In this paper recent progress…”
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    Journal Article Conference Proceeding
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    Simple resistance model fit to the oxidation of a vanadium film into VO2 by Case, F. C.

    “…A simple resistance model is used to describe the i n s i t u resistance changes which occur during the oxidation of a thin vanadium film to VO2. Separation of…”
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    Journal Article
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    A novel deposition technique for switchable vanadium sesquioxide (V2O3) thin films by Case, F. C.

    “…V2O3 is a phase transition material, which, like other oxides of vanadium, undergoes large changes in optical and electrical properties upon switching from the…”
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    Journal Article
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    The influence of substrate temperature on the optical properties of ion‐assisted reactively evaporated vanadium oxide thin films by Case, F. C.

    “…The properties of vanadium dioxide (VO2) films bombarded with oxygen ions during deposition are examined as a function of substrate temperature. Electrical and…”
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    Journal Article
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    MOVPE GROWTH OF HgCdTe FOR HIGH PERFORMANCE 3-5 micrometer PHOTODIODES OPERATING AT 100-180 K by Mitra, P, Case, F C, Reine, M B, Parodos, T, Tobin, S P, Norton, P W

    Published in Journal of electronic materials (01-01-1999)
    “…Detector structures were grown in situ by MOVPE on (211)B oriented CdZnTe substrates. The mobilities of the single n-type layers with x values of approx 0.30…”
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    Journal Article