Search Results - "Case, F. C."
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1
Progress in MOVPE of HgCdTe for advanced infrared detectors
Published in Journal of electronic materials (01-06-1998)Get full text
Journal Article -
2
The importance of veterinary career awareness
Published in Journal of the American Veterinary Medical Association (15-05-2018)Get full text
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3
HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy
Published in Journal of electronic materials (01-06-2001)“…We report the growth of HgCdTe on (552)B CdZnTe by metalorganic vapor phase epitaxy (MOVPE). The (552) plane is obtained by 180 degree rotation of the (211)…”
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Conference Proceeding Journal Article -
4
MOCVD of bandgap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays
Published in Journal of electronic materials (01-06-1997)Get full text
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5
Independently accessed back-to-back HgCdTe photodiodes: a new dual-band infrared detector
Published in Journal of electronic materials (01-05-1995)Get full text
Conference Proceeding Journal Article -
6
Improved Arsenic Doping in Metalorganic Chemical Vapor Deposition of HgCdTe and in situ Growth of High Performance Long Wavelength Infrared Photodiodes
Published in Journal of electronic materials (01-08-1996)“…Controlled and effective p-type doping is a key ingredient for in situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a…”
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Influence of ion beam parameters on the electrical and optical properties of ion‐assisted reactively evaporated vanadium dioxide thin films
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-1987)“…Large reductions in the phase transition temperature of vanadium dioxide thin films have been achieved in the past by doping with elements such as tungsten or…”
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8
Metalorganic chemical vapor deposition of HgCdTe p/n junctions using arsenic and iodine doping
Published in Journal of electronic materials (01-09-1995)Get full text
Conference Proceeding Journal Article -
9
Metalorganic chemical vapor deposition of HgCdTe for photodiode applications
Published in Journal of electronic materials (01-05-1995)Get full text
Conference Proceeding Journal Article -
10
Multispectral long-wavelength quantum-well infrared photodetectors
Published in Applied physics letters (12-05-2003)“…Multispectral detector arrays for application in the 8–11 μm spectral band have been fabricated from GaAs/AlGaAs multiple quantum-well (MQW) materials. For…”
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11
MOVPE growth of HgCdTe for high performance 3-5 mu m photodiodes operating at 100-180 K
Published in Journal of electronic materials (01-01-1999)“…New results are reported on the growth of high performance medium wavelength infrared (3-5 mu m) (MWIR) HgCdTe photodiodes in the three-layer P-n-N…”
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12
Enhanced quantum well infrared photodetector with novel multiple quantum well grating structure
Published in Applied physics letters (13-05-1996)“…An enhanced quantum well infrared photodetector (EQWIP) with lower dark current and improved performance relative to a conventional QWIP is described. Dark…”
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13
Donor doping in metalorganic chemical vapor deposition of HgCdTe using ethyl iodide
Published in Applied physics letters (11-07-1994)“…Highly effective donor doping during metalorganic chemical vapor deposition interdiffused multilayer growth of Hg1−xCdxTe is demonstrated using a novel…”
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14
Doping in MOVPE of HgCdTe: orientation effects and growth of high performance IR photodiodes
Published in Journal of crystal growth (01-01-1997)“…Extrinsic doping in MOVPE of HgCdTe has been a critical issue for the successful growth of high performance detector devices. In this paper recent progress…”
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Journal Article Conference Proceeding -
15
Simple resistance model fit to the oxidation of a vanadium film into VO2
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-1988)“…A simple resistance model is used to describe the i n s i t u resistance changes which occur during the oxidation of a thin vanadium film to VO2. Separation of…”
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16
A novel deposition technique for switchable vanadium sesquioxide (V2O3) thin films
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-1991)“…V2O3 is a phase transition material, which, like other oxides of vanadium, undergoes large changes in optical and electrical properties upon switching from the…”
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17
The influence of substrate temperature on the optical properties of ion‐assisted reactively evaporated vanadium oxide thin films
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-1988)“…The properties of vanadium dioxide (VO2) films bombarded with oxygen ions during deposition are examined as a function of substrate temperature. Electrical and…”
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MOVPE growth of HgCdTe for high performance 3-5 mm photodiodes operating at 100-180K
Published in Journal of electronic materials (01-06-1999)Get full text
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MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K
Published in Journal of electronic materials (01-06-1999)Get full text
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20
MOVPE GROWTH OF HgCdTe FOR HIGH PERFORMANCE 3-5 micrometer PHOTODIODES OPERATING AT 100-180 K
Published in Journal of electronic materials (01-01-1999)“…Detector structures were grown in situ by MOVPE on (211)B oriented CdZnTe substrates. The mobilities of the single n-type layers with x values of approx 0.30…”
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