Search Results - "Casas Espinola, J.L."

Two excitation pathways of Pr3+ ion emission in HfO2:Si:Pr films depending on crystalline phase transformations in annealing by Garcia Andrade, M.A., Torchynska, T., Casas Espinola, J.L., Velázquez Lozada, E., Polupan, G., Khomenkova, L., Gourbilleau, F.

“…The impact of annealing on the emission and transformation of the crystalline phases in Si rich HfO2:Pr films was investigated by analyzing the morphology,…”
Get full text

Band-edge emission, defects, morphology and structure of in-doped ZnO nanocrystal films by El Filali, B., Jaramillo Gomez, J.A., Torchynska, T.V., Casas Espinola, J.L., Shcherbyna, L.

“…In-doped ZnO films grown by ultrasonic spray pyrolysis have been studied by means of the scanning electron microscopy (SEM), energy dispersive X ray…”
Get full text

Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties by Torchynska, T.V., Casas Espinola, J.L., Vergara Hernandez, E., Khomenkova, L., Delachat, F., Slaoui, A.

“…Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the…”
Get full text

Emission, Er ion defects and structure of ZnO nanocrystal films prepared by ultrasonic spray pyrolysis by El Filali, B., Torchynska, T.V., Ramírez García, J.L., Casas Espinola, J.L., Polupan, G.

“…This work focuses on the investigation of near band edge (NBE) and Er ion related emissions, morphology and structure of Er-doped ZnO nanocrystal (NC) films…”
Get full text

Emission of ZnO:Ag nanorods obtained by ultrasonic spray pyrolysis by Velázquez Lozada, E., Torchynska, T.V., Casas Espinola, J.L., Pérez Millan, B.

“…Scanning electronic microscopy (SEM), X ray diffraction (XRD), photoluminescence (PL) and its temperature dependence have been studied in ZnO:Ag nanorods (NRs)…”
Get full text

Structural and light emitting properties of silicon-rich silicon nitride films grown by plasma enhanced-chemical vapor deposition by Torchynska, T.V., Casas Espinola, J.L., Khomenkova, L., Vergara Hernandez, E., Andraca Adame, J.A., Slaoui, A.

“…Si-rich Silicon nitride films fabricated by plasma enhanced chemical vapor deposition (PECVD) on p-type silicon substrates were investigated by means of…”
Get full text

“White” emission of ZnO nanosheets with thermal annealing by Diaz Cano, A.I., El Filali, B., Torchynska, T.V., Casas Espinola, J.L.

“…Photoluminescence (PL), its temperature dependence, scanning electronic microscopy (SEM) and X ray diffraction (XRD) have been studied in thermal annealed…”
Get full text

Photoluminescence variation in InAs quantum dots embedded in InGaAs/AlGaAs quantum wells at thermal annealing by Guerrero Moreno, I.J., Torchynska, T.V., Casas Espinola, J.L.

“…Photoluminescence (PL) and its temperature dependence have been studied in MBE grown InAs quantum dots (QDs) embedded in…”
Get full text

Electronic effects in emission of core/shell CdSe/ZnS quantum dots conjugated to anti-Interleukin 10 antibodies by Quintos Vazquez, A.L., Torchynska, T.V., Casas Espinola, J.L., Jaramillo Gómez, J.A., Douda, J.

“…The paper presents a comparative study of the photoluminescence (PL) and Raman scattering spectra of the core–shell CdSe/ZnS quantum dots (QDs) in…”
Get full text

Emission variation in infrared (CdSeTe)/ZnS quantum dots conjugated to antibodies by Jaramillo Gómez, J.A., Casas Espinola, J.L., Douda, J.

“…The paper presents the photoluminescence (PL) and Raman scattering investigations of infrared CdSeTe/ZnS quantum dots (QDs) with emission at 800nm (1.60eV) in…”
Get full text

Emission of CdSe/ZnS and CdSeTe/ZnS quantum dots conjugated to IgG antibodies by Torchynska, T.V., Casas Espinola, J.L., Díaz Cano, A., Douda, J., Gazarian, K.

“…Commercially available CdSe/ZnS QDs with emission at 605nm (2.04eV) and 655nm (1.90eV), as well as CdSeTe/ZnS QDs with emission at 705nm (1.78eV), have been…”
Get full text

Photoluminescence inhomogeneity and InAs QD laser structure parameters by Casas Espinola, J.L., Polupan, G.

“…The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In 0.15Ga 0.85As/GaAs quantum wells…”
Get full text

Photoluminescence of double core/shell infrared (CdSeTe)/ZnS quantum dots conjugated to Pseudo rabies virus antibodies by Torchynska, T.V., Casas Espinola, J.L., Jaramillo Gómez, J.A., Douda, J., Gazarian, K.

“…Double core CdSeTe/ZnS quantum dots (QDs) with emission at 800nm (1.60eV) have been studied by photoluminescence (PL) and Raman scattering methods in the…”
Get full text

Nanostructural modulation of Schottky barrier in Au/α-MoO3 heterojunction via Au nanoparticle size control by Mendoza-Sánchez, Alberto R., Hernández-Rodríguez, Y.M., Casas-Espínola, J.L., Cigarroa-Mayorga, O.E.

“…[Display omitted] •The size of AuNPs modifies the Schottky Barrier Height (SBH) of MoO3.•A novel method for determining SBH based on XPS in AuNPs/MoO3 systems…”
Get full text

Multiexcited state study in InAs DWELL structures by Casas-Espinola, J.L., Torchynska, T.V., Polupan, G.P., Velazquez-Lozada, E.

“…The photoluminescence (PL) spectra, their power and temperature dependences have been investigated for ground and excited states in InAs quantum dots (QDs)…”
Get full text

Photoluminescence scanning on InAs/InGaAs quantum dot structures by Dybiec, M., Borkovska, L., Ostapenko, S., Torchynska, T.V., Casas Espinola, J.L., Stintz, A., Malloy, K.J.

“…The photoluminescence spectra of InAs quantum dots (QDs) embedded into four types of In x Ga 1− x As/GaAs ( x = 0.10, 0.15, 0.20 and 0.25) multi quantum well…”
Get full text

One step synthesis-functionalization of Carbon Quantum Dost by carbonization of beetroot fruit (Beta Vulgaris) bagasse and their performance in sensing of Ag+ and Cu2+ ions by Rojas-Valencia, O.G., Díaz-Santiago, D.L., Casas-Espínola, J.L., Reza-San Germán, C.M., Estrada Flores, M.

“…[Display omitted] •Emissive CQDs were obtained from waste of beetroot fruit.•Use of beetroot bagasse as natural source for synthesis of CQDs offers a solution…”
Get full text

Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW by Torchynska, T.V., Casas Espinola, J.L., Velásquez Losada, E., Eliseev, P.G., Stintz, A., Malloy, K.J., Pena Sierra, R.

“…The photoluminescence (PL) spectra of highly uniform self-assembled InAs quantum dots (QDs) embedded in In 0.15Ga 0.85As multi-quantum-well (MQW)…”
Get full text

Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures by Casas Espínola, J.L., Polupan, G.

“…The photoluminescence and its temperature dependences have been investigated for the InAs quantum dots embedded in the asymmetric GaAs/In x Ga 1− x As/In…”
Get full text

Emission and strain in InGaAs/GaAs quantum wells with InAs quantum dots obtained at different temperatures by Mascorro Alquicira, R.L., Casas Espinola, J.L., Velázquez Lozada, E., Polupan, G., Shcherbyna, L.

“…► PL of InAs QDs grown at different temperatures (Tgr) has been investigated. ► Non monotonous dependence of PL parameters vs Tgr has been revealed. ► Non…”
Get full text