Search Results - "Casamento, Joseph"

The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system by Jena, Debdeep, Page, Ryan, Casamento, Joseph, Dang, Phillip, Singhal, Jashan, Zhang, Zexuan, Wright, John, Khalsa, Guru, Cho, Yongjin, Xing, Huili Grace

“…The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading…”
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Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films by Jaszewski, Samantha T., Calderon, Sebastian, Shrestha, Bishal, Fields, Shelby S., Samanta, Atanu, Vega, Fernando J., Minyard, Jacob D., Casamento, Joseph A., Maria, Jon-Paul, Podraza, Nikolas J., Dickey, Elizabeth C., Rappe, Andrew M., Beechem, Thomas E., Ihlefeld, Jon F.

“…Phase identification in HfO2-based thin films is a prerequisite to understanding the mechanisms stabilizing the ferroelectric phase in these materials, which…”
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Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures by Casamento, Joseph, Lee, Hyunjea, Chang, Celesta S., Besser, Matthew F., Maeda, Takuya, Muller, David A., Xing, Huili (Grace), Jena, Debdeep

“…Epitaxial multilayer heterostructures of ScxAl1−xN/GaN with Sc contents x = 0.11–0.45 are found to exhibit significant differences in structural quality,…”
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Lattice-matched multiple channel AlScN/GaN heterostructures by Nguyen, Thai-Son, Pieczulewski, Naomi, Savant, Chandrashekhar, Cooper, Joshua J. P., Casamento, Joseph, Goldman, Rachel S., Muller, David A., Xing, Huili G., Jena, Debdeep

“…AlScN is a new wide bandgap, high-k, ferroelectric material for radio frequency (RF), memory, and power applications. Successful integration of high-quality…”
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The Interplay Between Ferroelectricity and Electrochemical Reactivity on the Surface of Binary Ferroelectric AlxB1‐xN by Liu, Yongtao, Ievlev, Anton, Casamento, Joseph, Hayden, John, Trolier‐McKinstry, Susan, Maria, Jon‐Paul, Kalinin, Sergei V., Kelley, Kyle P.

“…Polarization dynamics and domain structure evolution in ferroelectric Al0.93B0.07N are studied using piezoresponse force microscopy and spectroscopies in…”
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Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN and Al2O3 substrates by Zhang, Zexuan, Cho, Yongjin, Singhal, Jashan, Li, Xiang, Dang, Phillip, Lee, Hyunjea, Casamento, Joseph, Tang, Yongjian, Xing, Huili Grace, Jena, Debdeep

“…Mn4N is a compound magnetic material that can be grown using MBE while exhibiting several desirable magnetic properties such as strong perpendicular magnetic…”
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Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN andAl2O3 substrates by Zhang Zexuan, Cho, Yongjin, Singhal Jashan, Li, Xiang, Dang, Phillip, Lee, Hyunjea, Casamento, Joseph, Tang, Yongjian

“…Mn4N is a compound magnetic material that can be grown using MBE whileexhibiting several desirable magnetic properties such as strong perpendicular…”
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Materials Relevant to Realizing a Field-Effect Transistor Based on Spin-Orbit Torques by Dang, Phillip, Zhang, Zexuan, Casamento, Joseph, Li, Xiang, Singhal, Jashan, Schlom, Darrell G., Ralph, Daniel C., Xing, Huili Grace, Jena, Debdeep

“…Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic…”
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Oxygen Incorporation in the Molecular Beam Epitaxy Growth of ScxGa1−xN and ScxAl1−xN by Casamento, Joseph, Xing, Huili Grace, Jena, Debdeep

“…Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor…”
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Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy by Alvarez, Gustavo A., Casamento, Joseph, van Deurzen, Len, Khan, Md Irfan, Khan, Kamruzzaman, Jeong, Eugene, Ahmadi, Elaheh, Xing, Huili Grace, Jena, Debdeep, Tian, Zhiting

“…Aluminum scandium nitride (AlScN) has been receiving increasing interest for radio frequency microelectromechanical systems because of their higher achievable…”
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Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN by Casamento, Joseph, Wright, John, Chaudhuri, Reet, Xing, Huili (Grace), Jena, Debdeep

“…RF plasma assisted MBE growth of scandium nitride (ScN) thin films on Ga-polar GaN (0001)/SiC, Al-polar AlN (0001)/Al2O3, and Si-face 6H-SiC (0001) hexagonal…”
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Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc x Ga 1− x N and Sc x Al 1− x N by Casamento, Joseph, Xing, Huili Grace, Jena, Debdeep

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Structural and piezoelectric properties of ultra-thin ScxAl1−xN films grown on GaN by molecular beam epitaxy by Casamento, Joseph, Chang, Celesta S., Shao, Yu-Tsun, Wright, John, Muller, David A., Xing, Huili (Grace), Jena, Debdeep

“…ScxAl1−xN (x = 0.18–0.40) thin films of ∼28 nm thickness grown on metal polar GaN substrates by molecular beam epitaxy are found to exhibit smooth morphology…”
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In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors by Chaudhuri, Reet, Hickman, Austin, Singhal, Jashan, Casamento, Joseph, Xing, Huili Grace, Jena, Debdeep

“…The recent demonstration of ≈ 2  W mm−1 output power at 94 GHz in AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) has established AlN as a promising…”
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Semiconducting High-Entropy Chalcogenide Alloys with Ambi-ionic Entropy Stabilization and Ambipolar Doping by Deng, Zihao, Olvera, Alan, Casamento, Joseph, Lopez, Juan S, Williams, Logan, Lu, Ruiming, Shi, Guangsha, Poudeu, Pierre F. P, Kioupakis, Emmanouil

“…Entropy stabilization is a novel materials-design paradigm to realize new compounds with widely tunable properties. However, almost all entropy-stabilized…”
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Dielectric properties of disordered A 6 B 2 O 17 (A = Zr; B = Nb, Ta) phases by Spurling, R. Jackson, Almishal, Saeed S. I., Casamento, Joseph, Hayden, John, Spangler, Ryan, Marakovits, Michael, Hossain, Arafat, Lanagan, Michael, Maria, Jon‐Paul

“…We report on the structure and dielectric properties of ternary A 6 B 2 O 17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter…”
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Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions by Casamento, Joseph, Nguyen, Thai-Son, Cho, Yongjin, Savant, Chandrashekhar, Vasen, Timothy, Afroz, Shamima, Hannan, Daniel, Xing, Huili (Grace), Jena, Debdeep

“…AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high electron mobility transistors due to its large dielectric…”
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InSitu Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors by Chaudhuri, Reet, Hickman, Austin, Singhal, Jashan, Casamento, Joseph, Xing, Huili Grace, Jena, Debdeep

“…The recent demonstration of ≈2 W mm−1 output power at 94 GHz in AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) has established AlN as a promising…”
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Dielectric properties of disordered A6B2O17 (A = Zr; B = Nb, Ta) phases by Spurling, R. Jackson, Almishal, Saeed S. I., Casamento, Joseph, Hayden, John, Spangler, Ryan, Marakovits, Michael, Hossain, Arafat, Lanagan, Michael, Maria, Jon‐Paul

“…We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter…”
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Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties by Casamento, Joseph, Lee, Hyunjea, Maeda, Takuya, Gund, Ved, Nomoto, Kazuki, van Deurzen, Len, Turner, Wesley, Fay, Patrick, Mu, Sai, Van de Walle, Chris G., Lal, Amit, Xing, Huili (Grace), Jena, Debdeep

“…Epitaxial ScxAl1−xN thin films of ∼100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric…”
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