Search Results - "Casady, Jeffrey"

700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's) by Agarwal, A.K., Casady, J.B., Rowland, L.B., Seshadri, S., Siergiej, R.R., Valek, W.F., Brandt, C.D.

“…Silicon Carbide (4H-SiC), asymmetrical gate turn-off thyristors (GTO's) were fabricated and tested with respect to forward voltage drop (V/sub F/), forward…”
Get full text

Hydrogen interaction with defects and impurities in 6H-SiC by KOSHKA, Yaroslav, DUFRENE, Janna B, CASADY, Jeffrey B

“…The dynamics of H capture and release from trapping centers in 6H SiC after plasma hydrogenation and annealing was investigated by low temperature…”
Get full text

Reverse conduction properties of vertical SiC trench JFETs by Sheridan, D. C., Chatty, K., Bondarenko, V., Casady, J. B.

“…1200V SiC vertical trench JFETs have been evaluated for their reverse conduction properties. Absent of a traditional body diode, the SiC trench JFET is shown…”
Get full text

Impact of next-generation 1700V SiC MOSFETs in a 125kW PV converter by Zhang, Jon, Rees, Fenton L., Hull, Brett, Casady, Jeffrey B., Allen, Scott, Palmour, John W.

“…1700V SiC modules were built with next-generation SiC MOSFETs, with 25°C R DSON per MOSFET cut approximately 50% from existing commercial SiC MOSFETs…”
Get full text

Processing and characterization of 6H-silicon carbide and 4H-silicon carbide electronic devices for high-temperature (500 degrees C) operation by Casady, Jeffrey Blaine

“…Fabricating microelectronic devices using standard semiconductor technology for use in high-temperature (up to 500$\sp\circ$C) electronics offers many…”
Get full text

4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications by Agarwal, Anant K, Seshadri, Suresh, MacMillan, Michael, Mani, Sita S, Casady, Jeffrey, Sanger, Phillip, Shah, Pankaj

“…This paper presents an overview of SiC power devices. The progress in pn junction diode development is described. The data on 10 A, 1000 V, packaged 4H–SiC…”
Get full text

900V silicon carbide MOSFETs for breakthrough power supply design by Pala, Vipindas, Barkley, Adam, Hull, Brett, Gangyao Wang, Sei-Hyung Ryu, Van Brunt, Edward, Lichtenwalner, Daniel, Richmond, Jim, Jonas, Charlotte, Capell, Craig, Allen, Scott, Casady, Jeffrey, Grider, David, Palmour, John

“…Improvements in 900V SiC MOSFET technology have resulted in switches that have extremely low ON resistance in high-speed packages. 900V SiC MOSFETs are…”
Get full text

Processing and characterization of 6H-silicon carbide and 4H-silicon carbide electronic devices for high-temperature (500 degrees C) operation by Casady, Jeffrey Blaine

“…Fabricating microelectronic devices using standard semiconductor technology for use in high-temperature (up to 500$\sp\circ$C) electronics offers many…”
Get full text

A hybrid 6H-SiC temperature sensor operational from 25°C to 500°C by Casady, J.B., Dillard, W.C., Johnson, R.W., Rao, U.

Get full text

Hybrid 6H-SiC temperature sensor operational from 25 degree C to 500 degree C by Casady, Jeffrey B, Dillard, William C, Johnson, R Wayne, Rao, U

“…6H-SiC buried-gate n-channel depletion-mode junction field-effect transistors (JFET's) were characterized from 25 degree C to 350 degree C in terms of…”
Get full text