Search Results - "Carrington, P.J."

Characterization of 6.1Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy by Craig, A.P., Carrington, P.J., Liu, H., Marshall, A.R.J.

“…GaSb p–i–n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution…”
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Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers by Altayar, A.R, Al-Saymari, F.A., Repiso, E., Hanks, L., Craig, A.P., Bentley, M., Delli, E., Carrington, P.J., Krier, A., Marshall, A.R.J.

“…•Room temperature mid-infrared electroluminescence on GaAs and Si substrates.•Higher EQE from the Si-based LED due to the superior heat spreading.•Activation…”
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Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy by Craig, A.P., Carrington, P.J., Liu, H., Marshall, A.R.J.

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GaSb-based solar cells for multi-junction integration on Si substrates by Tournet, J., Parola, S., Vauthelin, A., Montesdeoca Cardenes, D., Soresi, S., Martinez, F., Lu, Q., Cuminal, Y., Carrington, P.J., Décobert, J., Krier, A., Rouillard, Y., Tournié, E.

“…We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated,…”
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Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure by Montesdeoca, D., Carrington, P.J., Marko, I.P., Wagener, M.C., Sweeney, S.J., Krier, A.

“…Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a…”
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Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes by Cheetham, K.J., Carrington, P.J., Cook, N.B., Krier, A.

“…The liquid phase epitaxial growth of pentanary GaInAsSbP lattice matched onto InAs substrates is reported for use in narrow bandgap thermophotovoltaic cells…”
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Mid-infrared GaInSb/AlGaInSb quantum well laser diodes by Nash, G.R., Przeslak, S.J.B., Smith, S.J., de Valicourt, G., Andreev, A.D., Carrington, P.J., Yin, M., Krier, A., Coomber, S.D., Buckle, L., Emeny, M.T., Ashley, T.

“…Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing…”
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InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications by Carrington, P.J., Solov’ev, V.A., Zhuang, Q., Ivanov, S.V., Krier, A.

“…We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared…”
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Factors affecting custodial dispositions under the young offenders Act by CARRINGTON, P.J, MOYER, S

“…Notes a growing consensus that this Act (a) is more offence oriented; (b) the use of custody has increased; and (c) that (b) has arisen because of (a)…”
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