Search Results - "Carriere, T"

Polymorph Characterization of Active Pharmaceutical Ingredients (APIs) Using Low-Frequency Raman Spectroscopy by Larkin, Peter J., Dabros, Marta, Sarsfield, Beth, Chan, Eric, Carriere, James T., Smith, Brian C.

“…Polymorph detection, identification, and quantitation in crystalline materials are of great importance to the pharmaceutical industry. Vibrational…”
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Laser Validation of a Non-Destructive Test Methodology for the Radiation Sensitivity Assessment of Power Devices by Miller, F, Morand, S, Douin, A, Gaillard, R, Carriere, T, Buard, N

“…This paper presents a new test methodology based on the characterization of transient events to perform non-destructive radiation sensitivity assessments of…”
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Radioisotope production using lasers: From basic science to applications by Rodrigues, M. R. D., Bonasera, A., Scisciò, M., Pérez-Hernández, J. A., Ehret, M., Filippi, F., Andreoli, P. L., Huault, M., Larreur, H., Singappuli, D., Molloy, D., Raffestin, D., Alonzo, M., Rapisarda, G. G., Lattuada, D., Guardo, G. L., Verona, C., Consoli, Fe, Petringa, G., McNamee, A., La Cognata, M., Palmerini, S., Carriere, T., Cipriani, M., Di Giorgio, G., Cristofari, G., De Angelis, R., Cirrone, G. A. P., Margarone, D., Giuffrida, L., Batani, D., Nicolai, P., Batani, K., Lera, R., Volpe, L., Giulietti, D., Agarwal, S., Krupka, M., Singh, S., Consoli, Fa

“…The discovery of chirped pulse amplification has led to great improvements in laser technology, enabling energetic laser beams to be compressed to pulse…”
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Experimental Demonstration of Pattern Influence on DRAM SEU and SEFI Radiation Sensitivities by Bougerol, A, Miller, F, Guibbaud, N, Leveugle, R, Carriere, T, Buard, N

“…Thanks to laser and accelerator tests, we investigated the influence of test patterns regarding both SEU and SEFI radiation sensitivities for several DRAM…”
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Effect of Intermittent Systemic Administration of Recombinant Parathyroid Hormone (1-34) on Mandibular Fracture Healing in Rats by Rowshan, Henry H., DDS, Parham, Mary A., DVM, Baur, Dale A., DDS, MD, McEntee, RaeLynn D., BBA, Cauley, Eugene, Carriere, Dane T, Wood, Joseph C., PhD, MD, Demsar, William J., DMD, MS, Pizarro, Jose M., MS, PhD

“…Purpose To establish a rat mandibular fracture model and investigate the short- and long-term effects of recombinant parathyroid hormone (PTH 1-34) on…”
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Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER by Merelle, T., Chabane, H., Palau, J.-M., Castellani-Coulie, K., Wrobel, F., Saigne, F., Sagnes, B., Boch, J., Vaille, J.R., Gasiot, G., Roche, P., Palau, M.-C., Carriere, T.

“…A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the…”
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Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing by Miller, F., Luu, A., Prud'homme, F., Poirot, P., Gaillard, R., Buard, N., Carriere, T.

“…This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It…”
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Analysis of Quasi-Monoenergetic Neutron and Proton SEU Cross Sections for Terrestrial Applications by Lambert, D., Baggio, J., Hubert, G., Paillet, P., Girard, S., Ferlet-Cavrois, V., Flament, O., Saigne, F., Boch, J., Sagnes, B., Buard, N., Carriere, T.

“…This paper investigates the single event upset sensitivity of Bulk SRAMs for terrestrial applications. The technology sensitivity is analyzed with both…”
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Evaluation of accelerated total dose testing of linear bipolar circuits by Carriere, T., Ecoffet, R., Poirot, P.

“…Different part types of linear bipolar technology were irradiated in order to evaluate the ability of accelerated total dose testing to describe the tolerance…”
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Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions by Lambert, D., Baggio, J., Hubert, G., Ferlet-Cavrois, V., Flament, O., Saigne, F., Wrobel, F., Duarte, H., Boch, J., Sagnes, B., Buard, N., Carriere, T.

“…This paper investigates the sensitivity of SOI and Bulk SRAMs to neutron irradiations with energies from 14 to 500 MeV. The technology sensitivity is analyzed…”
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SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges by Luu, A., Miller, F., Poirot, P., Gaillard, R., Buard, N., Carriere, T., Austin, P., Bafleur, M., Sarrabayrouse, G.

“…This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards…”
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Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs by Merelle, T., Saigne, F., Sagnes, B., Gasiot, G., Roche, Ph, Carriere, T., Palau, M.-C., Wrobel, F., Palau, J.-M.

“…This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on…”
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Laser Mapping of SRAM Sensitive Cells: A Way to Obtain Input Parameters for DASIE Calculation Code by Miller, F., Buard, N., Hubert, G., Alestra, S., Baudrillard, G., Carriere, T., Gaillard, R., Palau, J.M., Saigne, F., Fouillat, P.

“…This paper presents a new way of investigation using the laser method. It is based on laser threshold mappings of electronic devices. The main idea is to use…”
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DASIE Analytical Version: A Predictive Tool for Neutrons, Protons and Heavy Ions Induced SEU Cross Section by Weulersse, C., Hubert, G., Forget, G., Buard, N., Carriere, T., Heins, P., Palau, J.M., Saigne, F., Gaillard, R.

“…This paper presents the new detailed analysis of the secondary ion effect analytical version that allows fast and accurate calculation of neutron, proton and…”
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Toward a practical method for measuring glass transition in polymers with low-frequency Raman spectroscopy by Chimenti, Robert V., Carriere, James T., D'Ascoli, Danielle M., Engelhardt, Jamison D., Sepcic, Alyssa M., Bensley, Kayla A., Lehman-Chong, Alexandra M., Stanzione, Joseph F., Lofland, Samuel E.

“…Glass transition temperature is one of the most important characteristics to describe the behavior of polymeric materials. When a material goes through glass…”
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Probing SET Sensitive Volumes in Linear Devices Using Focused Laser Beam at Different Wavelengths by Weulersse, C., Bezerra, F., Miller, F., Carriere, T., Buard, N., Falo, W.

“…The main objective of the work presented here is to explore the ability of laser irradiations to determine the SET sensitive depths of a linear device by using…”
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Charge Sharing Study in the Case of Neutron Induced SEU on 130 nm Bulk SRAM Modeled by 3-D Device Simulation by Merelle, T., Serre, S., Saigne, F., Sagnes, B., Gasiot, G., Roche, P., Carriere, T., Palau, M.-C.

“…The charge sharing quantification in the case of neutron induced SEUs in a 130 nm bulk SRAM is presented. Conclusions on its contribution to the soft errors…”
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Effects of beam spot size on the correlation between laser and heavy ion SEU testing by Miller, F., Buard, N., Carriere, T., Dufayel, R., Gaillard, R., Poirot, P., Palau, J.-M., Sagnes, B., Fouillat, P.

“…This work presents new results to compare EADS CCR laser experiments and heavy ion tests. More precisely, this study describes the influence of the laser spot…”
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Neutron Induced Energy Deposition in a Silicon Diode by Rocheman, S., Wrobel, F., Vaille, J.-R., Saigne, F., Weulersse, C., Buard, N., Carriere, T.

“…Simulation of energy deposition in silicon by nuclear reactions is a crucial point for single event prediction tool development. In order to compare with the…”
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High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects by Marinoni, M., Touboul, A.D., Zander, D., Petit, C., Wrobel, F., Carvalho, A.M.J.F., Arinero, R., Ramonda, M., Saigne, F., Weulersse, C., Buard, N., Carriere, T., Lorfevre, E.

“…From annealing experiments performed on both irradiated SiO 2 -Si structures and MOS devices, swift heavy ions-induced morphological oxide defects are proposed…”
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