Search Results - "Carreno, M.N.P."
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1
Wide optical band gap window layers for solar cells
Published in Solar energy materials and solar cells (01-02-2001)“…In this paper, the preparation of amorphous silicon carbide with very wide optical band gap and high conductivity were reported. The films were fabricated…”
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Journal Article Conference Proceeding -
2
Characterization of silicon thin films obtained by MicroHeater MEMS based-microLPCVD technique
Published in 2022 36th Symposium on Microelectronics Technology (SBMICRO) (22-08-2022)“…In this work, results on silicon thin film deposition utilizing a new micro LPCVD technique, based on a MEMS-based microheater device, are presented. This…”
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Conference Proceeding -
3
Electrochemical electrodes based on Laser Induced Graphene on PECVD a-SiC:H and Polyimide
Published in 2022 36th Symposium on Microelectronics Technology (SBMICRO) (22-08-2022)“…The formation of graphene with defined patterns is crucial for the fabrication of graphene-based electrochemical devices as well as for different devices in…”
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Conference Proceeding -
4
Development of MEMS based microCVD technique for new materials thin films deposition
Published in 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) (01-08-2019)“…In this work a new approach for deposition of new materials is proposed. In this approach, a CVD (Chemical Vapor Deposition) process is implemented in a micro…”
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Conference Proceeding -
5
Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD
Published in Journal of non-crystalline solids (15-06-2006)“…Crystallization of a-SiC:H films obtained by PECVD technique at low temperatures and results on corrosion by reactive ion etching (RIE) of these films are…”
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Journal Article Conference Proceeding -
6
PECVD-SiOxNy films for large area self-sustained grids applications
Published in Sensors and actuators. A. Physical. (01-09-2002)Get full text
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7
Wide gap a-Si1-xCx: H thin films obtained under starving plasma deposition conditions
Published in Journal of non-crystalline solids (01-06-1996)Get full text
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8
Direct CVD graphene growth onto surgical stainless steel for orthopedic implants
Published in Diamond and related materials (01-11-2024)“…Graphene sheets were successfully grown for the first time on the surface of surgical stainless steel cylinders by direct APCVD process using methane, argon…”
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9
Integration of optical waveguides with micro-incandescent light
Published in Journal of non-crystalline solids (01-05-2008)“…In this work, we propose the integration of optical waveguides with a simple light source device. Light is emitted from an incandescent chromium micro-resistor…”
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Journal Article Conference Proceeding -
10
Laser-induced graphene in flexible PI/PDMS polymer aiming application in pressure sensors
Published in 2023 37th Symposium on Microelectronics Technology and Devices (SBMicro) (28-08-2023)“…There is a huge field of research involving graphene, both for the study of its properties and on its countless applications. As a result, graphene with…”
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Conference Proceeding -
11
Membranes of SiO xN y with 3D topography formed by PECVD for MEMS applications
Published in Journal of non-crystalline solids (2004)“…Self-sustained corrugated membranes with 3D topography are fabricated utilizing low stress silicon oxynitride (SiO x N y ) films obtained by the PECVD…”
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Journal Article -
12
PECVD a-Sic:H Young’s modulus obtained by MEMS resonant frequency
Published in Journal of non-crystalline solids (01-05-2008)“…In this paper we study the Young’s modulus of PECVD obtained silicon rich (x>0.5) a-SixC1−x:H thin films through the study of the resonance frequency of free…”
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Journal Article Conference Proceeding -
13
Thermally actuated a-SiC:H MEMS fabricated by a PECVD process
Published in Journal of non-crystalline solids (15-06-2006)“…The fabrication of a fully operational thermally actuated MEMS based on PECVD materials is reported. These micro-electro-mechanical systems consist of matrixes…”
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14
N and p-type doping of PECVD a-SiC:H obtained under “silane starving plasma” condition with and without hydrogen dilution
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15-03-2006)“…N and p-type doping of highly structural and chemically ordered a-Si 0.5C 0.5:H films are studied. Ion implantation is utilized as doping technique and the…”
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15
p-Type doping in a-Si 1−xC x:H obtained by PECVD
Published in Journal of non-crystalline solids (2000)“…In previous works we have pointed out the importance of the so-called ‘silane starving plasma’ condition on the optical, chemical and structural properties of…”
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Journal Article -
16
Self-sustained bridges of a-SiC:H films obtained by PECVD at low temperatures for MEMS applications
Published in Journal of non-crystalline solids (15-06-2004)“…In this work PECVD obtained a-SiC:H films are utilized to fabricate self sustained microbridges and microtunnels. The deposition conditions for these films,…”
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17
Membranes of SiOxNy with 3D topography formed by PECVD for MEMS applications
Published in Journal of non-crystalline solids (15-06-2004)“…Self-sustained corrugated membranes with 3D topography are fabricated utilizing low stress silicon oxynitride (SiOxNy) films obtained by the PECVD technique at…”
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Journal Article -
18
Fabrication of PECVD-silicon oxynitride-based optical waveguides
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25-09-2004)“…In this work, we report on the optimization of all process steps for the fabrication of optical waveguides with high index contrast by using as core and…”
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19
Amorphous and excimer laser annealed SiC films for TFT fabrication
Published in Solid-state electronics (01-02-2006)“…The characteristics of hydrogenated amorphous silicon carbide films prepared by PECVD and crystallized by KrF UV excimer laser annealing (ELA), for different…”
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20
PECVD-SiO xN y films for large area self-sustained grids applications
Published in Sensors and actuators. A. Physical. (2002)“…In this work we study the structural properties and mechanical stress of silicon oxynitride (SiO x N y ) films obtained by plasma enhanced chemical vapor…”
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