Search Results - "Carrada, M"

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  1. 1

    Atomic-scale and optical investigation of nanostructured Er disilicates in silica by Guehairia, S., Demoulin, R., Merabet, H., Pareige, P., Cardin, J., Labbé, C., Carrada, M., Gourbilleau, F., Talbot, E.

    Published in Journal of alloys and compounds (10-12-2022)
    “…The optical and structural properties of Er-doped Silicon oxide based thin films elaborated by RF magnetron sputtering were investigated as a function of…”
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    Journal Article
  2. 2

    Preventing the Degradation of Ag Nanoparticles Using an Ultrathin a‑Al2O3 Layer as Protective Barrier by Baraldi, G, Carrada, M, Toudert, J, Ferrer, F. J, Arbouet, A, Paillard, V, Gonzalo, J

    Published in Journal of physical chemistry. C (09-05-2013)
    “…We compare the morphology and optical response of plasmonic nanostructures produced by pulsed laser deposition, consisting of a 2D distribution of Ag…”
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    Journal Article
  3. 3

    Properties of silicon nanoparticles embedded in SiNx deposited by microwave-PECVD by Delachat, F, Carrada, M, Ferblantier, G, Grob, J-J, Slaoui, A

    Published in Nanotechnology (14-10-2009)
    “…In this work, silicon-rich silicon nitride (SRN) layers were deposited on a silicon wafer by microwave-assisted plasma-enhanced chemical vapor deposition…”
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    Journal Article
  4. 4

    Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories by Bonafos, C., Spiegel, Y., Normand, P., Ben-Assayag, G., Groenen, J., Carrada, M., Dimitrakis, P., Kapetanakis, E., Sahu, B. S., Slaoui, A., Torregrosa, F.

    Published in Applied physics letters (16-12-2013)
    “…Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate…”
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    Journal Article
  5. 5

    Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguides by Daldosso, N., Navarro-Urrios, D., Melchiorri, M., Pavesi, L., Gourbilleau, F., Carrada, M., Rizk, R., García, C., Pellegrino, P., Garrido, B., Cognolato, L.

    Published in Applied physics letters (27-06-2005)
    “…Pump and probe experiments on Er 3 + ions coupled to Si nanoclusters have been performed in rib-loaded waveguides to investigate optical amplification at 1.5 μ…”
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    Journal Article
  6. 6

    Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in SiO2 by López, M., Garrido, B., Garcı́a, C., Pellegrino, P., Pérez-Rodrı́guez, A., Morante, J. R., Bonafos, C., Carrada, M., Claverie, A.

    Published in Applied physics letters (04-03-2002)
    “…The ability of surface passivation to enhance the photoluminescence (PL) emission of Si nanocrystals in SiO2 has been investigated. No significant increase of…”
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    Journal Article
  7. 7

    Ge nanocrystals in HfO2/SiN dielectric stacks by low energy ion beam synthesis by Carrada, M., Sahu, B.S., Bonafos, C., Gloux, F., Groenen, J., Muller, D., Slaoui, A.

    Published in Thin solid films (30-09-2013)
    “…Germanium nanocrystals (Ge-NCs) have been obtained by low energy ion beam synthesis in a SiNx/HfO2 stack layer. The effect of the Ge implanted dose variations…”
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    Journal Article Conference Proceeding
  8. 8
  9. 9

    Transmission electron microscopy measurements of the injection distances in nanocrystal-based memories by Assayag, G. Ben, Bonafos, C., Carrada, M., Claverie, A., Normand, P., Tsoukalas, D.

    Published in Applied physics letters (13-01-2003)
    “…The characteristics of nonvolatile memories making use of Si nanocrystals as charge storage elements buried in the gate oxide of regular…”
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    Journal Article
  10. 10

    Dielectric functions of PECVD-grown silicon nanoscale inclusions within rapid thermal annealed silicon-rich silicon nitride films by Keita, A.-S., En Naciri, A., Delachat, F., Carrada, M., Ferblantier, G., Slaoui, A., Stchakovsky, M.

    Published in Thin solid films (28-02-2011)
    “…Spectroscopic ellipsometry (SE) measurements were carried out in order to characterize the optical properties of silicon nanoscale inclusions (Si-ni) contained…”
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    Journal Article Conference Proceeding
  11. 11

    Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications by Bonafos, C., Coffin, H., Schamm, S., Cherkashin, N., Ben Assayag, G., Dimitrakis, P., Normand, P., Carrada, M., Paillard, V., Claverie, A.

    Published in Solid-state electronics (01-11-2005)
    “…In this work, we show how to manipulate two-dimensional arrays of Si NCs in thin (⩽10 nm) SiO 2 layers by ultra-low-energy (⩽1 keV) ion implantation and…”
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    Journal Article Conference Proceeding
  12. 12
  13. 13

    Structural and optical properties of high density Si-ncs synthesized in SiNx:H by remote PECVD and annealing by Carrada, M., Zerga, A., Amann, M., Grob, J.J., Stoquert, J.P., Slaoui, A., Bonafos, C., Schamm, S.

    “…Silicon nanocrystals (Si-ncs) embedded in silicon nitride are of great interest for micro and optoelectronic devices such as non-volatile memories and solar…”
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    Journal Article
  14. 14

    MOS memory structures by very-low-energy-implanted Si in thin SiO2 by Dimitrakis, P., Kapetanakis, E., Normand, P., Skarlatos, D., Tsoukalas, D., Beltsios, K., Claverie, A., Benassayag, G., Bonafos, C., Chassaing, D., Carrada, M., Soncini, V.

    “…The electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent…”
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    Journal Article
  15. 15
  16. 16

    Influence of Er concentration on the emission properties of Er-doped Si-rich silica films obtained by reactive magnetron co-sputtering by Carrada, M., Gourbilleau, F., Dufour, C., Levalois, M., Rizk, R.

    Published in Optical materials (01-02-2005)
    “…Er-doped silicon-rich silicon oxide (SRSO) thin films have been fabricated by reactive magnetron sputtering of a pure silica target topped by chips of Er 2O 3…”
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    Journal Article Conference Proceeding
  17. 17

    Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS by Perego, M., Ferrari, S., Fanciulli, M., Ben Assayag, G., Bonafos, C., Carrada, M., Claverie, A.

    Published in Applied surface science (15-06-2004)
    “…In this paper TOF-SIMS is used to characterize nanocrystals synthetized by ion implantation and subsequent annealing. The variation of the Si n − signals…”
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    Journal Article
  18. 18

    Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer by DUMAS, C, GRISOLIA, J, BENASSAYAG, G, BONAFOS, C, SCHAMM, S, CLAVERIE, A, ARBOUET, A, CARRADA, M, PAILLARD, V, SHALCHIAN, M

    “…In this paper, we have studied the effect of the thickness of the initial SiO2 layer (5–7 nm) on the charge and discharge properties of a 2D array of Si…”
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    Conference Proceeding Journal Article
  19. 19

    Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers by Carrada, M., Cherkashin, N., Bonafos, C., Benassayag, G., Chassaing, D., Normand, P., Tsoukalas, D., Soncini, V., Claverie, A.

    “…Silicon nanocrystals (ncs) buried in a thin oxide can be used as charge storage elements and be integrated in standard CMOS technology to fabricate new…”
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    Journal Article
  20. 20

    Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications by Coffin, H., Bonafos, C., Schamm, S., Carrada, M., Cherkashin, N., Ben Assayag, G., Dimitrakis, P., Normand, P., Respaud, M., Claverie, A.

    “…In nanocrystal (nc) metal-oxide-semiconductor (MOS) memory structures, a fine control of nc location and population is required for pinpointing the optimal…”
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    Journal Article