Search Results - "Cappy, A"

Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors by Knap, W., Lusakowski, J., Parenty, T., Bollaert, S., Cappy, A., Popov, V. V., Shur, M. S.

“…We report on the resonant, voltage tunable emission of terahertz radiation (0.4–1.0 THz) from a gated two-dimensional electron gas in a 60 nm InGaAs high…”
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Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors by El Fatimy, A., Teppe, F., Dyakonova, N., Knap, W., Seliuta, D., Valušis, G., Shchepetov, A., Roelens, Y., Bollaert, S., Cappy, A., Rumyantsev, S.

“…The authors report on detection of terahertz radiation by high electron mobility nanometer InGaAs∕AlInAs transistors. The photovoltaic type of response was…”
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Room-temperature terahertz emission from nanometer field-effect transistors by Dyakonova, N., El Fatimy, A., Łusakowski, J., Knap, W., Dyakonov, M. I., Poisson, M.-A., Morvan, E., Bollaert, S., Shchepetov, A., Roelens, Y., Gaquiere, Ch, Theron, D., Cappy, A.

“…Room-temperature generation of terahertz radiation in nanometer gate length InAlAs∕InGaAs and AlGaN∕GaN high-mobility transistors is reported. A well-defined…”
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Imaging and controlling electron transport inside a quantum ring by Hackens, B, Huant, S, Martins, F, Ouisse, T, Sellier, H, Bollaert, S, Wallart, X, Cappy, A, Chevrier, J, Bayot, V

“…Traditionally, the understanding of quantum transport, coherent and ballistic, relies on the measurement of macroscopic properties such as the conductance…”
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Imaging electron wave functions inside open quantum rings by Martins, F, Hackens, B, Pala, M G, Ouisse, T, Sellier, H, Wallart, X, Bollaert, S, Cappy, A, Chevrier, J, Bayot, V, Huant, S

“…Combining scanning gate microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of the electron probability density |Psi|(2)(x,y)…”
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Nonlinear electrical properties of three-terminal junctions by Wallin, D., Shorubalko, I., Xu, H. Q., Cappy, A.

“…The authors report on room-temperature electrical measurements of three-terminal junctions made from a semiconductor heterostructure. The correlation between…”
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Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs by Vasallo, B.G., Wichmann, N., Bollaert, S., Roelens, Y., Cappy, A., Gonzalez, T., Pardo, D., Mateos, J.

“…The static and dynamic behavior of InAlAs/InGaAs double-gate high-electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2-D Monte Carlo…”
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Microscopic modeling of nonlinear transport in ballistic nanodevices by Mateos, J., Vasallo, B.G., Pardo, D., Gonzalez, T., Galloo, J.S., Bollaert, S., Roelens, Y., Cappy, A.

“…By using a semi-classical two-dimensional (2-D) Monte Carlo simulation, simple ballistic devices based on AlInAs/InGaAs channels are analyzed. Our simulations…”
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Dwell-time-limited coherence in open quantum dots by Hackens, B, Faniel, S, Gustin, C, Wallart, X, Bollaert, S, Cappy, A, Bayot, V

“…We present measurements of the electron phase coherence time tau(varphi) on a wide range of open ballistic quantum dots (QDs) made from InGaAs…”
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Monte Carlo simulator for the design optimization of low-noise HEMTs by Mateos, J., Gonzalez, T., Pardo, D., Hoel, V., Cappy, A.

“…A complete analysis of low-noise 0.1 /spl mu/m gate AlInAs-GaInAs HEMT's has been performed by using a semiclassical Monte Carlo simulation. The validity of…”
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Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs by Vasallo, Beatriz G., Wichmann, Nicolas, Bollaert, Sylvain, Roelens, Yannick, Cappy, Alain, Gonzalez, TomÁs, Pardo, Daniel, Mateos, Javier

“…The noise performance of InAlAs/InGaAs double-gate (DG) and standard high-electron-mobility transistors (HEMTs) is analyzed by means of an ensemble 2-D Monte…”
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Sign reversal and tunable rectification in a ballistic nanojunction by Hackens, B., Gence, L., Gustin, C., Wallart, X., Bollaert, S., Cappy, A., Bayot, V.

“…Low-temperature measurements show that an asymmetric mesoscopic junction patterned in a two-dimensional electron gas can exhibit tunable rectification,…”
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Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls by WICHMANN, N, DUSZYNSKI, I, WALLART, X, BOLLAERT, S, CAPPY, A

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Wide- and narrow-band bandpass coplanar filters in the W-frequency band by Eric Rius, Prigent, G., Happy, H., Dambrine, G., Boret, S., Cappy, A.

“…This paper deals with the design of passive coplanar devices in the W-frequency band. As long as coplanar transmission lines are correctly dimensioned,…”
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Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs by Mateos, J, Gonzalez, T, Pardo, D, Hoel, V, Happy, H, Cappy, A

“…A classical Monte Carlo (MC) device simulation has been modified to locally introduce the effects of electron degeneracy and nonequilibrium screening. Its…”
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Nonlinear effects in T-branch junctions by Mateos, J., Vasallo, B.G., Pardo, D., Gonzalez, T., Pichonat, E., Galloo, J.-S., Bollaert, S., Roelens, Y., Cappy, A.

“…The negative potential appearing at the central branch of T-branch junctions (TBJs) when biasing left and right contacts in push-pull fashion has been found to…”
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A new method for determining the FET small-signal equivalent circuit by Dambrine, G., Cappy, A., Heliodore, F., Playez, E.

“…A method to determine the small-signal equivalent circuit of FETs is proposed. This method consists of a direct determination of both the extrinsic and…”
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Noise modeling and measurement techniques (HEMTs) by Cappy, A.

“…The high electron mobility transistor's (HEMT's) noise behavior is presented from theoretical and experimental points of view. The general method used in the…”
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Ballistic nano-devices for high frequency applications by Bollaert, S., Cappy, A., Roelens, Y., Galloo, J.S., Gardes, C., Teukam, Z., Wallart, X., Mateos, J., Gonzalez, T., Vasallo, B.G., Hackens, B., Berdnarz, L., Huynen, I.

“…In this paper, we present a study on three-terminal ballistic junction and their applications to rectifiers and MUX/DEMUX. Rectifying effect is observed up to…”
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High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits by Dambrine, G., Raskin, J.-P., Danneville, F., Vanhoenackel Janvier, D., Colinge, J.-P., Cappy, A.

“…An exhaustive experimental study of the high-frequency noise properties of MOSFET in silicon-on-insulator (SOI) technology is presented. Various gate…”
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