Search Results - "Capizzi, Mario"

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    Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O by Felici, Marco, Polimeni, Antonio, Capizzi, Mario, Nabetani, Y., Okuno, T., Aoki, K., Kato, T., Matsumoto, T., Hirai, T.

    Published in Applied physics letters (06-03-2006)
    “…We investigated the optical properties of ZnTe:O∕GaAs before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated…”
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    Hydrogen Incorporation in III-N-V Semiconductors: From Macroscopic to Nanometer Control of the Materials' Physical Properties by Trotta, Rinaldo, Polimeni, Antonio, Capizzi, Mario

    Published in Advanced functional materials (09-05-2012)
    “…The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1‐xNx, are discussed. The remarkable consequences of hydrogen…”
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    Bandgap Energy of Wurtzite InAs Nanowires by Rota, Michele B, Ameruddin, Amira S, Fonseka, H. Aruni, Gao, Qiang, Mura, Francesco, Polimeni, Antonio, Miriametro, Antonio, Tan, H. Hoe, Jagadish, Chennupati, Capizzi, Mario

    Published in Nano letters (10-08-2016)
    “…InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal–organic chemical vapor deposition catalyzed by 50, 100, and 150…”
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    Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires by Zilli, Attilio, De Luca, Marta, Tedeschi, Davide, Fonseka, H. Aruni, Miriametro, Antonio, Tan, Hark Hoe, Jagadish, Chennupati, Capizzi, Mario, Polimeni, Antonio

    Published in ACS nano (28-04-2015)
    “…Semiconductor nanowires (NWs) formed by non-nitride III–V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and…”
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    Polarized Light Absorption in Wurtzite InP Nanowire Ensembles by De Luca, Marta, Zilli, Attilio, Fonseka, H. Aruni, Mokkapati, Sudha, Miriametro, Antonio, Tan, Hark Hoe, Smith, Leigh Morris, Jagadish, Chennupati, Capizzi, Mario, Polimeni, Antonio

    Published in Nano letters (11-02-2015)
    “…We investigate the absorption properties of ensembles of wurtzite (WZ) InP nanowires (NWs) by high-resolution polarization-resolved photoluminescence…”
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    Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities by Pettinari, Giorgio, Felici, Marco, Biccari, Francesco, Capizzi, Mario, Polimeni, Antonio

    Published in Photonics (01-06-2018)
    “…We review an innovative approach for the fabrication of site-controlled quantum emitters (i.e., single-photon emitting quantum dots) based on the spatially…”
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  8. 8

    Single Photons on Demand from Novel Site-Controlled GaAsN/GaAsN:H Quantum Dots by Birindelli, Simone, Felici, Marco, Wildmann, Johannes S, Polimeni, Antonio, Capizzi, Mario, Gerardino, Annamaria, Rubini, Silvia, Martelli, Faustino, Rastelli, Armando, Trotta, Rinaldo

    Published in Nano letters (12-03-2014)
    “…We demonstrate triggered single-photon emission from a novel system of site-controlled quantum dots (QDs), fabricated by exploiting the hydrogen-assisted,…”
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    Genesis of "Solitary Cations" Induced by Atomic Hydrogen by Pettinari, Giorgio, Filippone, Francesco, Polimeni, Antonio, Mattioli, Giuseppe, Patanè, Amalia, Lebedev, Vladim, Capizzi, Mario, Amore Bonapasta, Aldo

    Published in Advanced functional materials (01-09-2015)
    “…Substitution of constituent atoms and/or changes of crystal structure are routinely used to tailor the fundamental properties of a semiconductor. Here, it is…”
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    Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats by De Luca, Marta, Polimeni, Antonio, Felici, Marco, Miriametro, Antonio, Capizzi, Mario, Mura, Francesco, Rubini, Silvia, Martelli, Faustino

    Published in Applied physics letters (29-04-2013)
    “…Photoluminescence excitation spectra of InGaAs in InGaAs/GaAs heterostructure nanowire mats show clear antiresonances at the critical points of the joint…”
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    Hydrogen-mediated nanostructuring of dilute nitride semiconductors by Trotta, Rinaldo, Polimeni, Antonio, Capizzi, Mario

    Published in Physica Status Solidi (b) (01-05-2011)
    “…The deposition of hydrogen‐opaque metallic wires on GaAsN and subsequent hydrogen irradiation allows creating planar regions, where the properties of GaAsN are…”
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    Determination of Exciton Reduced Mass and Gyromagnetic Factor of Wurtzite (InGa)As Nanowires by Photoluminescence Spectroscopy under High Magnetic Fields by De Luca, Marta, Polimeni, Antonio, Capizzi, Mario, Meaney, Alan J, Christianen, Peter C. M, Maan, Jan Kees, Mura, Francesco, Rubini, Silvia, Martelli, Faustino

    Published in ACS nano (23-12-2013)
    “…Semiconductor nanowires (NWs) have the prospect of being employed as basic units for nanoscale devices and circuits. However, the impact of their…”
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    Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires by Felici, Marco, Polimeni, Antonio, Tartaglini, Elena, Notargiacomo, Andrea, De Luca, Marta, Carron, Romain, Fekete, Dan, Dwir, Benjamin, Rudra, Alok, Capizzi, Mario, Kapon, Eli

    Published in Applied physics letters (08-10-2012)
    “…We investigated the effects of hydrogen irradiation on the degree of linear polarization, ρ, of the light emitted by site-controlled, dilute-nitride InGaAsN…”
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    Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor by Di Paola, Davide Maria, Velichko, Anton V., Bomers, Mario, Balakrishnan, Nilanthy, Makarovsky, Oleg, Capizzi, Mario, Cerutti, Laurent, Baranov, Alexei N., Kesaria, Manoj, Krier, Anthony, Taliercio, Thierry, Patanè, Amalia

    Published in Advanced optical materials (05-02-2018)
    “…Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid‐infrared (MIR) spectral range. This work examines a recent…”
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    Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states by Pettinari, Giorgio, Polimeni, Antonio, Capizzi, Mario, Engelkamp, Hans, Christianen, Peter C. M., Maan, Jan C., Patanè, Amalia, Tiedje, Thomas

    “…The puzzling electronic and transport properties of the Ga(AsBi) alloy are investigated for a wide range of Bi‐concentrations (x = 0–10.6%) by means of various…”
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    XAS, XES and DFT simulations to bridge local and macroscopic properties in GaAsN by Amidani, Lucia, Ciatto, Gianluca, Boscherini, Federico, Filippone, Francesco, Mattioli, Giuseppe, Alippi, Paola, Bondino, Federica, Polimeni, Antonio, Capizzi, Mario, Amore Bonapasta, Aldo

    “…Abstract only Although it is well known that dilute species often significantly modify the properties of solids in which they are hosted, a basic question…”
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