Search Results - "Capizzi, Mario"
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Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O
Published in Applied physics letters (06-03-2006)“…We investigated the optical properties of ZnTe:O∕GaAs before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated…”
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Hydrogen Incorporation in III-N-V Semiconductors: From Macroscopic to Nanometer Control of the Materials' Physical Properties
Published in Advanced functional materials (09-05-2012)“…The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1‐xNx, are discussed. The remarkable consequences of hydrogen…”
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Bandgap Energy of Wurtzite InAs Nanowires
Published in Nano letters (10-08-2016)“…InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal–organic chemical vapor deposition catalyzed by 50, 100, and 150…”
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Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires
Published in ACS nano (28-04-2015)“…Semiconductor nanowires (NWs) formed by non-nitride III–V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and…”
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Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination
Published in Advanced materials (Weinheim) (01-05-2018)“…Many of the most advanced applications of semiconductor quantum dots (QDs) in quantum information technology require a fine control of the QDs' position and…”
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Polarized Light Absorption in Wurtzite InP Nanowire Ensembles
Published in Nano letters (11-02-2015)“…We investigate the absorption properties of ensembles of wurtzite (WZ) InP nanowires (NWs) by high-resolution polarization-resolved photoluminescence…”
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Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities
Published in Photonics (01-06-2018)“…We review an innovative approach for the fabrication of site-controlled quantum emitters (i.e., single-photon emitting quantum dots) based on the spatially…”
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Single Photons on Demand from Novel Site-Controlled GaAsN/GaAsN:H Quantum Dots
Published in Nano letters (12-03-2014)“…We demonstrate triggered single-photon emission from a novel system of site-controlled quantum dots (QDs), fabricated by exploiting the hydrogen-assisted,…”
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Quantum Dots: Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination (Adv. Mater. 21/2018)
Published in Advanced materials (Weinheim) (01-05-2018)“…In article number 1705450, Francesco Biccari and co‐workers describe a novel and versatile approach for the post‐growth fabrication of site‐controlled,…”
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Genesis of "Solitary Cations" Induced by Atomic Hydrogen
Published in Advanced functional materials (01-09-2015)“…Substitution of constituent atoms and/or changes of crystal structure are routinely used to tailor the fundamental properties of a semiconductor. Here, it is…”
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Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
Published in Journal of physical chemistry. C (03-08-2017)“…One hour annealing at 300 °C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB)…”
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Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats
Published in Applied physics letters (29-04-2013)“…Photoluminescence excitation spectra of InGaAs in InGaAs/GaAs heterostructure nanowire mats show clear antiresonances at the critical points of the joint…”
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Fabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures
Published in Advanced materials (Weinheim) (24-06-2011)“…A novel nanofabrication method based on nitrogen passivation by hydrogen in GaAsN is presented. This approach combines a masked hydrogenation process with a…”
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Hydrogen-mediated nanostructuring of dilute nitride semiconductors
Published in Physica Status Solidi (b) (01-05-2011)“…The deposition of hydrogen‐opaque metallic wires on GaAsN and subsequent hydrogen irradiation allows creating planar regions, where the properties of GaAsN are…”
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Determination of Exciton Reduced Mass and Gyromagnetic Factor of Wurtzite (InGa)As Nanowires by Photoluminescence Spectroscopy under High Magnetic Fields
Published in ACS nano (23-12-2013)“…Semiconductor nanowires (NWs) have the prospect of being employed as basic units for nanoscale devices and circuits. However, the impact of their…”
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Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires
Published in Applied physics letters (08-10-2012)“…We investigated the effects of hydrogen irradiation on the degree of linear polarization, ρ, of the light emitted by site-controlled, dilute-nitride InGaAsN…”
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Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor
Published in Advanced optical materials (05-02-2018)“…Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid‐infrared (MIR) spectral range. This work examines a recent…”
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Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states
Published in Physica Status Solidi. B: Basic Solid State Physics (01-04-2013)“…The puzzling electronic and transport properties of the Ga(AsBi) alloy are investigated for a wide range of Bi‐concentrations (x = 0–10.6%) by means of various…”
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XAS, XES and DFT simulations to bridge local and macroscopic properties in GaAsN
Published in Acta crystallographica. Section A, Foundations and advances (05-08-2014)“…Abstract only Although it is well known that dilute species often significantly modify the properties of solids in which they are hosted, a basic question…”
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