Search Results - "Canovai, C.A."

Ultra-shallow junction formation using silicide as a diffusion source and low thermal budget by Wang, Q., Osburn, C.M., Canovai, C.A.

“…Ultra-shallow p/sup +//n and n/sup +//p junctions were fabricated using SADS (silicide-as-diffusion-source) and ITS (ion-implantation-through-silicide…”
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Partial agglomeration during Co silicide film formation by Xiao, Z.G., Rozgonyi, G.A., Canovai, C.A., Osburn, C.M.

“…The agglomeration of Co silicide films formed on Si substrates processed with evaporated Co film thicknesses from 9 to 28 nm was investigated by TEM and…”
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Addendum: “Partial agglomeration during Co silicide film formation” [J. Mater. Res. 7, 269 (1992)] by Xiao, Z.G., Rozgonyi, G.A., Canovai, C.A., Osburn, C.M.

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