Search Results - "Cano, Austin M"

Thermal Atomic Layer Etching of SiO2 by a “Conversion-Etch” Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride by DuMont, Jaime W, Marquardt, Amy E, Cano, Austin M, George, Steven M

“…The thermal atomic layer etching (ALE) of SiO2 was performed using sequential reactions of trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300 °C. Ex…”
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Effect of HF Pressure on Thermal Al2O3 Atomic Layer Etch Rates and Al2O3 Fluorination by Cano, Austin M, Marquardt, Amy E, DuMont, Jaime W, George, Steven M

“…Thermal Al2O3 atomic layer etching (ALE) can be accomplished using sequential fluorination and ligand-exchange reactions. HF can be employed as the…”
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SF4 as the Fluorination Reactant for Al2O3 and VO2 Thermal Atomic Layer Etching by Gertsch, Jonas C, Cano, Austin M, Bright, Victor M, George, Steven M

“…Thermal atomic layer etching (ALE) is an important technique for the precise isotropic etching of nanostructures. Thermal ALE of many materials can be achieved…”
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Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO2 by Kondati Natarajan, Suresh, Cano, Austin M, Partridge, Jonathan L, George, Steven M, Elliott, Simon D

“…A combined computational and experimental study is employed to understand the competition between self-limiting (SL) and chemical vapor etch (CVE) reactions to…”
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Thermal Atomic Layer Etching of SiO 2 by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride by DuMont, Jaime W, Marquardt, Amy E, Cano, Austin M, George, Steven M

“…The thermal atomic layer etching (ALE) of SiO was performed using sequential reactions of trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300 °C. Ex situ…”
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Thermal Atomic Layer Etching of Al2O3 Using Sequential HF and BCl3 Exposures: Evidence for Combined Ligand-Exchange and Conversion Mechanisms by Cano, Austin M., Partridge, Jonathan L., George, Steven M.

“…The atomic layer etching (ALE) of Al2O3 was demonstrated using sequential HF and BCl3 exposures. BCl3 is a new precursor for thermal Al2O3 ALE that can provide…”
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Thermal Atomic Layer Etching of Al 2 O 3 Using Sequential HF and BCl 3 Exposures: Evidence for Combined Ligand-Exchange and Conversion Mechanisms by Cano, Austin M., Partridge, Jonathan L., George, Steven M.

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Thermal Atomic Layer Etching of Aluminum Nitride Using HF or XeF 2 for Fluorination and BCl 3 for Ligand Exchange by Cano, Austin M., Lii-Rosales, Ann, George, Steven M.

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Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al2O3 by trimethylaluminum by Myers, Tyler J., Cano, Austin M., Lancaster, Diane K., Clancey, Joel W., George, Steven M.

“…Atomic layer processing such as atomic layer deposition (ALD) and thermal atomic layer etching (ALE) is usually described in terms of sequential, self-limiting…”
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Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO 2 by Kondati Natarajan, Suresh, Cano, Austin M., Partridge, Jonathan L., George, Steven M., Elliott, Simon D.

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Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy, mass spectrometry, and density functional theory by Cano, Austin M., Kondati Natarajan, Suresh, Partridge, Jonathan L., Elliott, Simon D., George, Steven M.

“…The spontaneous etching of boron oxide (B2O3) by hydrogen fluoride (HF) gas is important during thermal atomic layer etching after BCl3 converts the surface of…”
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Thermal atomic layer etching of VO2 using sequential BCl3 and SF4 exposures: Observation of conversion, ligand-exchange, and oxidation state changes by Gertsch, Jonas C., Partridge, Jonathan L., Cano, Austin M., Clancey, Joel W., Bright, Victor M., George, Steven M.

“…The thermal atomic layer etching (ALE) of VO2 was demonstrated using sequential exposures of BCl3 and SF4. The VO2 etch rate measured by quartz crystal…”
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Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al 2 O 3 by trimethylaluminum by Myers, Tyler J., Cano, Austin M., Lancaster, Diane K., Clancey, Joel W., George, Steven M.

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SF 4 as the Fluorination Reactant for Al 2 O 3 and VO 2 Thermal Atomic Layer Etching by Gertsch, Jonas C., Cano, Austin M., Bright, Victor M., George, Steven M.

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Effect of HF Pressure on Thermal Al 2 O 3 Atomic Layer Etch Rates and Al 2 O 3 Fluorination by Cano, Austin M., Marquardt, Amy E., DuMont, Jaime W., George, Steven M.

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Thermal Atomic Layer Etching of Aluminum Nitride Using HF or XeF2 for Fluorination and BCl3 for Ligand Exchange by Cano, Austin M, Lii-Rosales, Ann, George, Steven M

“…Thermal atomic layer etching (ALE) of amorphous and crystalline aluminum nitride was performed using sequential exposures of hydrogen fluoride (HF) or xenon…”
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