Search Results - "Canaperi, Donald F."

Electron and hole mobility enhancement in strained SOI by wafer bonding by Lijuan Huang, Chu, J.O., Goma, S.A., D'Emic, C.P., Koester, S.J., Canaperi, D.F., Mooney, P.M., Cordes, S.A., Speidell, J.L., Anderson, R.M., Wong, H.-S.P.

“…N- and p-MOSFETs have been fabricated in strained Si-on-SiGe-on-insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer…”
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Post porosity plasma protection integration at 48 nm pitch by Huai Huang, Lionti, Krystelle, Volksen, Willi, Spooner, Terry, Shobha, Hosadurga, Joe Lee, Chen, James Hsueh-Chung, Magbitang, Teddie, Peethala, Brown, Liniger, Eric G., Chao Kun Hu, Huang, Elbert, Canaperi, Donald F., Standaert, Theodorus E., Edelstein, Daniel C., Grill, Alfred, Dubois, Geraud, Bonilla, Griselda

“…Integration of high porosity low-k dielectrics faces major challenges as the porosity weakens the dielectric, resulting in severe plasma induced damage (PID)…”
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Silicon Carrier with Deep Through-Vias, Fine Pitch Wiring and Through Cavity for Parallel Optical Transceiver by Patel, C.S., Tsang, C.K., Schuster, C., Doany, F.E., Nyikal, H., Baks, C.W., Budd, R., Buchwalter, L.P., Andry, P.S., Canaperi, D.F., Edelstein, D.C., Horton, R., Knickerbocker, J.U., Krywanczyk, T., Kwark, Y.H., Kwietniak, K.T., Magerlein, J.H., Rosner, J., Sprogis, E.

“…The design, fabrication, assembly and characterization of a novel silicon carrier package used for enabling a Tb/s parallel optical transceiver is reported…”
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Edge-curling-wall discontinuities and interactions with Bloch walls in easy-axis Permalloy by Herman, D.A., Trouilloud, P.L., Argyle, B.E., Petek, B., Romankiw, L.T., Bezama, J.S., Rath, D.L., Canaperi, D.F., Komsa, M.L.

“…Laminations of soft-magnetic and nonmagnetic films, which meet the criteria for easy-axis state, have edge-curling walls instead of the triangular closure…”
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