Search Results - "Campola, Michael"

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    A Confidence-Based Approach to Include Survivors in a Probabilistic TID Failure Assessment by Champagne, Chloe A., Sierawski, Brian D., Ladbury, Raymond L., Campola, Michael J., Fleetwood, Daniel M.

    Published in IEEE transactions on nuclear science (01-04-2024)
    “…A probabilistic total ionizing dose (TID) failure assessment is extended to include survivor data, enabling the bounding of failure probability to a desired…”
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    Journal Article
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    A TID and SEE Characterization of Multi-Terabit COTS 3D NAND Flash by Wilcox, Edward P., Campola, Michael J.

    Published in 2019 IEEE Radiation Effects Data Workshop (01-07-2019)
    “…Single-event effects and total ionizing dose testing are described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special…”
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    Conference Proceeding
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    Single-Event Transient Case Study for System-Level Radiation Effects Analysis by Campola, Michael J., Austin, Rebekah A., Wilcox, Edward P., Kim, Hak S., Ladbury, Raymond L., Label, Kenneth A., Pellish, Jonathan A.

    Published in IEEE transactions on nuclear science (01-05-2021)
    “…Analog single-event transient (SET) results are analyzed for two different applications within one system architecture. Application-specific analyses are…”
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    Journal Article
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    An Examination of the Radiation Sensitivity of Electronic Display Pixel Technologies by Ryder, Landen D., Wyrwas, Edward J., Cisneros, Geraldo A., Bautista, Justin R., Xu, Xiaojing, Garrett, Tyler M., Campola, Michael J., Gaza, Razvan

    “…64 MeV proton irradiation test campaigns were conducted on pixel technologies that span the range of commercially available electronic displays for crewed…”
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    Conference Proceeding
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    BJTs in Space: ELDRS Experiment on NASA Space Environment Testbed by Benedetto, A. R., Barnaby, H. J., Cook, Cheyenne, Campola, Michael J., Tender, Anna

    “…Flight data on bipolar junction transistors (BJTs) are recorded and the effects of low dose rate space irradiation on BJTs are characterized, leading to…”
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    Conference Proceeding
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    Failure Analysis of Heavy Ion-Irradiated Schottky Diodes by Casey, Megan C., Lauenstein, Jean-Marie, Weachock, Ronald J., Wilcox, Edward P., Hua, Lang M., Campola, Michael J., Topper, Alyson D., Ladbury, Raymond L., LaBel, Kenneth A.

    Published in IEEE transactions on nuclear science (01-01-2018)
    “…In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to…”
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    Journal Article
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    Systems Engineering and Assurance Modeling (SEAM): A Web-Based Solution for Integrated Mission Assurance by Ryder, K L, Alles, R, Karsai, G, Mahadevan, N, Evans, J, Witulski, A F, Campola, M, Austin, R, Schrimpf, R

    “…We present an overview of the Systems Engineering and Assurance Modeling (SEAM) platform, a web-browser-based tool which is designed to help engineers evaluate…”
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    Journal Article
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    NASA Goddard Space Flight Center's Compendium of Recent Total Ionizing Dose and Displacement Damage Dose Results by Topper, Alyson D., Wilcox, Edward P., Casey, Megan C., Campola, Michael J., Burton, Noah D., LaBel, Kenneth A., Cochran, Donna J., O'Bryan, Martha V.

    “…Total ionizing dose and displacement damage testing were performed to characterize and determine the suitability of candidate electronics for NASA space…”
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    Conference Proceeding
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    Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions by Sierawski, B.D., Pellish, J.A., Reed, R.A., Schrimpf, R.D., Warren, K.M., Weller, R.A., Mendenhall, M.H., Black, J.D., Tipton, A.D., Xapsos, M.A., Baumann, R.C., Xiaowei Deng, Campola, M.J., Friendlich, M.R., Kim, H.S., Phan, A.M., Seidleck, C.M.

    Published in IEEE transactions on nuclear science (01-12-2009)
    “…Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported for other deep submicron…”
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    Journal Article
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    Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs by Tipton, A.D., Pellish, J.A., Hutson, J.M., Baumann, R., Deng, X., Marshall, A., Xapsos, M.A., Kim, H.S., Friendlich, M.R., Campola, M.J., Seidleck, C.M., LaBel, K.A., Mendenhall, M.H., Reed, R.A., Schrimpf, R.D., Weller, R.A., Black, J.D.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the…”
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    Journal Article
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    In-Flight Demonstration of Enhanced-Low-Dose-Rate-Sensitivity (ELDRS) in Bipolar Junction Transistors by Benedetto, A. R., Barnaby, H. J., Cook, Cheyenne, Campola, Michael J., Tender, Anna

    Published in 2022 IEEE Aerospace Conference (AERO) (05-03-2022)
    “…Data on bipolar junction transistors (BJTs) acquired from an in-flight mission experiment are recorded and downloaded for analysis. These data are analyzed for…”
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    Conference Proceeding
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    Single Event Effects Testing of a Vertical Optocoupler with Unmodified Packaging by Ryder, Landen D., Carstens, Thomas A., Phan, Anthony M., Seidlick, Christina M., Campola, Michael J.

    “…Single event effects measurements were conducted on a ACPL-785E optocoupler at NASA Space Radiation Laboratory. Measurements with a periodic input signal show…”
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    Conference Proceeding
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    A Confidence-Based Approach to Including Survivors in a Probabilistic TID Failure Assessment by Champagne, Chloe A., Sierawski, Brian D., Ladbury, Raymond L., Campola, Michael J., Fleetwood, Daniel M.

    Published in IEEE transactions on nuclear science (06-11-2023)
    “…A probabilistic total ionizing dose (TID) failure assessment is extended to include survivor data, enabling the bounding of failure probability to a desired…”
    Get full text
    Journal Article