Search Results - "Campabadal, Francesca"

Variability in Resistive Memories by Roldán, Juan B., Miranda, Enrique, Maldonado, David, Mikhaylov, Alexey N., Agudov, Nikolay V., Dubkov, Alexander A., Koryazhkina, Maria N., González, Mireia B., Villena, Marco A., Poblador, Samuel, Saludes-Tapia, Mercedes, Picos, Rodrigo, Jiménez-Molinos, Francisco, Stavrinides, Stavros G., Salvador, Emili, Alonso, Francisco J., Campabadal, Francesca, Spagnolo, Bernardo, Lanza, Mario, Chua, Leon O.

“…Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage,…”
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True Random Number Generator based on the Variability of the High Resistance State of RRAMs by Akbari, M., Mirzakuchaki, S., Arumi, D., Manich, S., Gomez-Pau, A., Campabadal, F., Gonzalez, M. B., Rodriguez-Montanes, R.

“…Hardware-based security primitives like True Random Number Generators (TRNG) have become a crucial part in protecting data over communication channels. With…”
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Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni-HfO2-Si Capacitors by Vaca, Cesar, Gonzalez, Mireia B., Castan, Helena, Garcia, Hector, Duenas, Salvador, Campabadal, Francesca, Miranda, Enrique, Bailon, Luis A.

“…Resistive switching conduction in Ni/HfO 2 /Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS)…”
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Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories by Aguilera-Pedregosa, Cristina, Maldonado, David, González, Mireia B, Moreno, Enrique, Jiménez-Molinos, Francisco, Campabadal, Francesca, Roldán, Juan B

“…A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly…”
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Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures by Beldarrain, Oihane, Duch, Marta, Zabala, Miguel, Rafí, Joan Marc, González, Mireia Bargalló, Campabadal, Francesca

“…In this work, a study of the influence of the processing conditions on the blistering of Al2O3 layers grown by atomic layer deposition (ALD) on silicon…”
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Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures by Saura, Xavier, Miranda, Enrique, Jiménez, David, Long, Shibing, Liu, Ming, Rafí, Joan Marc, Campabadal, Francesca, Suñé, Jordi

“…Volatile threshold switching and non-volatile memory switching modes of resistive switching are reported in Al/HfO 2 /Si(p) metal--oxide--semiconductor…”
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Standards for the Characterization of Endurance in Resistive Switching Devices by Lanza, Mario, Waser, Rainer, Ielmini, Daniele, Yang, J. Joshua, Goux, Ludovic, Suñe, Jordi, Kenyon, Anthony Joseph, Mehonic, Adnan, Spiga, Sabina, Rana, Vikas, Wiefels, Stefan, Menzel, Stephan, Valov, Ilia, Villena, Marco A, Miranda, Enrique, Jing, Xu, Campabadal, Francesca, Gonzalez, Mireia B, Aguirre, Fernando, Palumbo, Felix, Zhu, Kaichen, Roldan, Juan Bautista, Puglisi, Francesco Maria, Larcher, Luca, Hou, Tuo-Hung, Prodromakis, Themis, Yang, Yuchao, Huang, Peng, Wan, Tianqing, Chai, Yang, Pey, Kin Leong, Raghavan, Nagarajan, Dueñas, Salvador, Wang, Tao, Xia, Qiangfei, Pazos, Sebastian

“…Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic…”
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Cycle-to-cycle variability analysis of Ti/Al2O3-based memristors by Rasbach, Julius, Saludes-Tapia, Mercedes, González, Mireia Bargalló, Campabadal, Francesca

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Impact of the temperature on the conductive filament morphology in HfO2-based RRAM by Vinuesa, Guillermo, García, Héctor, Poblador, Samuel, González, Mireia B., Campabadal, Francesca, Castán, Helena, Dueñas, Salvador

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A novel biosensor based on hafnium oxide: Application for early stage detection of human interleukin-10 by Lee, Michael, Zine, Nadia, Baraket, Abdellatif, Zabala, Miguel, Campabadal, Francesca, Caruso, Raffaele, Trivella, Maria Giovanna, Jaffrezic-Renault, Nicole, Errachid, Abdelhamid

“…Measurement of interleukin-10 (IL-10) has subsequently become a crucial tool to identify end-stage heart failure (ESHF) patients prone to adverse outcomes…”
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Methodology for the characterization and observation of filamentary spots in HfOx-based memristor devices by Poblador, Samuel, Maestro-Izquierdo, Marcos, Zabala, Miguel, González, Mireia B., Campabadal, Francesca

“…Filamentary TiN/Ti/HfO2/W resistive switching devices were fabricated and electrically measured setting them in different resistance and degradation…”
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Reset transition in HfO2-Based memristors using a constant power signal by García, Héctor, Vinuesa, Guillermo, González, Mireia B., Campabadal, Francesca, Castán, Helena, Dueñas, Salvador

“…Memristors, also known as resistive switching devices, have great potential for applications in memory and neuromorphic systems. Understanding the switching…”
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Experimental evaluation of the dynamic route map in the reset transition of memristive ReRAMs by Maldonado, David, Gonzalez, Mireia B., Campabadal, Francesca, Jimenez-Molinos, Francisco, Chawa, M. Moner Al, Stavrinides, Stavros G., Roldan, Juan B., Tetzlaff, Ronald, Picos, Rodrigo, Chua, Leon O.

“…In this paper, we analyze the reset transition in bipolar TiN/Ti/HfO2 (10 nm)/Al2O3(2 nm)/W ReRAM devices using a tool that allows studying the temporal…”
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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices by Rodriguez-Fernandez, Alberto, Aldana, Samuel, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique, Jimenez-Molinos, Francisco, Bautista Roldan, Juan, Bargallo Gonzalez, Mireia

“…The impact of the dielectric thickness, forming polarity, and current compliance on the self-rectifying current-voltage(I-V) characteristics of Ni/HfO 2 /n +…”
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Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells by Gorriz, Jordi Munoz, Gonzalez, Mireia Bargallo, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique A.

“…Time statistics for successive breakdown (BD) events in Al 2 O 3 /HfO 2 -based nanolaminates aimed to the development of multilevel one-time programmable (OTP)…”
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On the chaotic nature of random telegraph noise in unipolar RRAM memristor devices by Stavrinides, Stavros G., Hanias, Michael P., Gonzalez, Mireia B., Campabadal, Francesca, Contoyiannis, Yiannis, Potirakis, Stelios M., Al Chawa, Mohamad Moner, de Benito, Carol, Tetzlaff, Ronald, Picos, Rodrigo, Chua, Leon O.

“…Random telegraph noise (RTN) owns its very name to its assumed stochastic nature. In this paper, we follow up previous works that questioned this stochastic…”
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Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard by Suñé, Jordi, Aguirre, Fernando, Bargalló González, Mireia, Campabadal, Francesca, Miranda, Enrique

“…The ballistic conduction through narrow constrictions connecting charge reservoirs exhibits conductance quantization effects. Since the quantum of conductance…”
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Unpredictable Bits Generation Based on RRAM Parallel Configuration by Arumi, Daniel, Gomez-Pau, Alvaro, Manich, Salvador, Rodriguez-Montanes, Rosa, Gonzalez, Mireia Bargallo, Campabadal, Francesca

“…In this letter, a cell with the parallel combination of two TiN/Ti/HfO 2 /W resistive random access memory (RRAM) devices is studied for the generation of…”
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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge by García, Héctor, Vinuesa, Guillermo, Ossorio, Óscar G., Sahelices, Benjamín, Castán, Helena, Dueñas, Salvador, González, Mireia B., Campabadal, Francesca

“…[Display omitted] In this work, we have studied the set and the reset transitions in hafnium oxide-based metal–insulator-metal ReRAM devices using a capacitor…”
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Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM by Bargallo Gonzalez, Mireia, Martin-Martinez, Javier, Maestro, Marcos, Cruz Acero, Maria, Nafria, Montserrat, Campabadal, Francesca

“…In this paper, the presence of filamentary current instabilities in the high resistance state of Ni/HfO 2 -based RRAM devices and their associated current…”
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