Search Results - "Callanan, R"

Unemployment in multiple sclerosis across the ages: How factors of unemployment differ among the decades of life by Strober, LB, Callanan, RM

“…Rates of unemployment in multiple sclerosis are high. Certain disease, psychological, and person-specific factors contribute to these high rates. The present…”
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Characterization, Modeling, and Application of 10-kV SiC MOSFET by Jun Wang, Tiefu Zhao, Jun Li, Huang, A.Q., Callanan, R., Husna, F., Agarwal, A.

“…Ten-kilovolt SiC MOSFETs are currently under development by a number of organizations in the United States, with the aim of enabling their applications in…”
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12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC by Qingchun Zhang, Das, M., Sumakeris, J., Callanan, R., Agarwal, A.

“…SiC bipolar devices are favored over SiC unipolar devices for applications requiring breakdown voltage in excess of 10 kV. We have designed and fabricated…”
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10-kV SiC MOSFET-Based Boost Converter by Jun Wang, Xiaohu Zhou, Jun Li, Tiefu Zhao, Huang, A.Q., Callanan, R., Husna, F., Agarwal, A.

“…10-kV silicon carbide (SiC) MOSFETs are currently being developed by a number of organizations in the U.S. with prospective applications in high-voltage and…”
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A cytotoxicity assay for the detection and differentiation of two families of shellfish toxins by FLANAGAN, A. F, CALLANAN, K. R, DONLON, J, PALMER, R, FORDE, A, KANE, M

“…There is an urgent need for an alternative to the mouse bioassay for the detection of algal toxins in shellfish on both analytical and animal welfare grounds…”
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SiC Power Devices for Microgrids by Zhang, Qingchun, Callanan, Robert, Das, M. K., Ryu, Sei-Hyung, Agarwal, Anant K., Palmour, John W.

“…Microgrids with distributed generation sources are critical for reduction of greenhouse gas emissions and imported energy. However, power converters and…”
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A day in the life of Rebecca Callanan, clinical nurse specialist by Callanan, R

“…A Day in the Life Of series. Personal account by a clinical nurse specialist at the Phyllis Tuckwell Hospice in Surrey, explaining her role in the community…”
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SiC power devices for Smart Grid systems by Palmour, J W, Zhang, J Q, Das, M K, Callanan, R, Agarwal, A K, Grider, D E

“…A Smart Grid with distributed generation is critical for reducing greenhouse gas emissions. However, current power converters and circuit breakers built with…”
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1.2 MW DC-DC converter by Homeyer, W.G., Callanan, R.J., Bowles, E.E., Nerem, A.

“…A DC-DC power converter has been developed to charge power capacitors to 16 kV from a 400 V battery bank. It is designed to charge an 8.5 MJ bank nine times in…”
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Third quadrant behavior of SiC MOSFETs by Callanan, R., Rice, J., Palmour, J.

“…This paper presents the third quadrant operating characteristics (VDS and ID both negative) of Cree's SiC MOSFETs. This work includes information regarding the…”
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Design and Characterization of High-Voltage 4H-SiC p-IGBTs by Zhang, Qingchun, Huang, Alex Q., Wang, Jun, Jonas, Charlotte, Callanan, Robert, Sumakeris, Joseph J., Ryu, Sei-Hyung, Das, Mrinal, Agarwal, Anant, Palmour, John

“…High-voltage p-channel 4H-SiC insulated gate bipolar transistors (IGBTs) have been fabricated and characterized. The devices have a forward voltage drop of 7.2…”
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A 10-kV Monolithic Darlington Transistor With [Formula Omitted] of 336 in 4H-SiC by Zhang, Qingchun, Jonas, C, O'Loughlin, M, Callanan, R, Agarwal, A, Scozzie, C

“…4H-SiC bipolar Darlington transistors with a record-high current gain have been demonstrated. The dc forced current gain was measured up to 336 at 200…”
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A 10-kV Monolithic Darlington Transistor With beta rm forced of 336 in 4H-SiC by Zhang, Qingchun, Jonas, C, O'Loughlin, M, Callanan, R, Agarwal, A, Scozzie, C

“…4H-SiC bipolar Darlington transistors with a record-high current gain have been demonstrated. The dc forced current gain was measured up to 336 at 200 W/cm…”
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A 10-kV Monolithic Darlington Transistor With \beta of 336 in 4H-SiC by Qingchun Zhang, Jonas, C., O'Loughlin, M., Callanan, R., Agarwal, A., Scozzie, C.

“…4H-SiC bipolar Darlington transistors with a record-high current gain have been demonstrated. The dc forced current gain was measured up to 336 at 200 W/cm 2 (…”
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Incidental Detection of Breast Lesions with Computed Tomography by Meller, Mark T, Cox, Julie E.M, Callanan, Keith W.R

“…Abstract The incidental finding of a breast lesion on a computed tomography scan is increasingly common at our institution. In the past 12 months, we have…”
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Prospects of bipolar power devices in silicon carbide by Agarwal, A., Qingchun Zhang, Burk, A., Callanan, R., Mazumder, S.

“…There has been a rapid improvement in SiC materials and power devices during the last few years. SiC unipolar devices such as Schottky diodes, JFETS and…”
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4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield by Qingchun Zhang, Burk, A., Husna, F., Callanan, R., Agarwal, A., Palmour, J., Stahlbush, R., Scozzie, C.

“…In this paper, for the first time, large area SiC BJTs were fabricated on SiC wafers with reduced Basal Plane Dislocations (BPDs). We have demonstrated: (1)…”
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1700V 4H-SiC MOSFETs and Schottky diodes for next generation power conversion applications by Hull, B A, Henning, J, Jonas, C, Callanan, R, Olmedo, A, Sousa, Rich, Solovey, J M

“…Junction barrier Schottky (JBS) diodes and MOSFETs fabricated in 4H-SiC are described. These power devices are capable of blocking in excess of 1700 V with…”
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3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications by Sei-Hyung Ryu, Lin Cheng, Dhar, S., Capell, C., Jonas, C., Callanan, R., Agarwal, A., Palmour, J., Lelis, A., Scozzie, C., Geil, B.

“…We present our most recent developments in 4H-SiC DMOSFETs. A 4H-SiC DMOSFET with an active area of 0.1 cm 2 showed a specific on-resistance of 3.7 mΩ-cm 2…”
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State of the Art 10 kV NMOS Transistors by Das, M.K., Callanan, R., Capell, D.C., Hull, B., Husna, F., Richmond, J., O'loughlin, M., Paisley, M.J., Powell, A., Qingchun Zhang

“…Rapidly improving 4 H-SiC material quality and a maturing MOS process/design have enabled the development of the largest 10 kV MOSFET to date and the first 10…”
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