Search Results - "Calderoni, A."

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity by Pedretti, G., Milo, V., Ambrogio, S., Carboni, R., Bianchi, S., Calderoni, A., Ramaswamy, N., Spinelli, A. S., Ielmini, D.

“…Brain-inspired computation can revolutionize information technology by introducing machines capable of recognizing patterns (images, speech, video) and…”
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Computing of temporal information in spiking neural networks with ReRAM synapses by Wang, W, Pedretti, G, Milo, V, Carboni, R, Calderoni, A, Ramaswamy, N, Spinelli, A S, Ielmini, D

“…Resistive switching random-access memory (ReRAM) is a two-terminal device based on ion migration to induce resistance switching between a high resistance state…”
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Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5 by Fantini, P., Ferro, M., Calderoni, A., Brazzelli, S.

“…This work investigates the atomic structural relaxation accounting for the resistance drift of the amorphous phase of the Ge2Sb2Te5 (α-GST) chalcogenide alloy…”
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A multicenter study of treatment of primary CNS lymphoma by Ferreri, A J M, Reni, M, Pasini, F, Calderoni, A, Tirelli, U, Pivnik, A, Aondio, G M, Ferrarese, F, Gomez, H, Ponzoni, M, Borisch, B, Berger, F, Chassagne, C, Iuzzolino, P, Carbone, A, Weis, J, Pedrinis, E, Motta, T, Jouvet, A, Barbui, T, Cavalli, F, Blay, J Y

“…To characterize the therapeutic variables correlated to outcome in 370 patients with primary CNS lymphoma. Planned treatment was radiotherapy (RT) in 98…”
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Publisher Correction: Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity by Pedretti, G., Milo, V., Ambrogio, S., Carboni, R., Bianchi, S., Calderoni, A., Ramaswamy, N., Spinelli, A. S., Ielmini, D.

“…A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper…”
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Area under the curve of methotrexate and creatinine clearance are outcome-determining factors in primary CNS lymphomas by FERRERI, A. J. M, GUERRA, E, FERRARESE, F, ROGNONE, A, GOVI, S, DELL'ORO, S, LOCATELLI, M, VILLA, E, RENI, M, REGAZZI, M, PASINI, F, AMBROSETTI, A, PIVNIK, A, GUBKIN, A, CALDERONI, A, SPINA, M, BRANDES, A

“…Although high-dose methotrexate (HD-MTX) is the most effective drug against primary CNS lymphomas (PCNSL), outcome-determining variables related to its…”
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Understanding Overreset Transition in Phase-Change Memory Characteristics by Calderoni, A., Ferro, M., Varesi, E., Fantini, P., Rizzi, M., Ielmini, D.

“…In a phase-change memory (PCM), the overreset phenomenon, namely, the resistance decrease at pulse amplitudes well beyond the reset current, may affect the…”
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Relevance of intraocular involvement in the management of primary central nervous system lymphomas by Ferreri, A. J. M., Blay, J.-Y., Reni, M., Pasini, F., Gubkin, A., Tirelli, U., Calderoni, A., Zucca, E., Cortelazzo, S., Chassagne, C., Tinguely, M., Borisch, B., Berger, F., Ponzoni, M., Cavalli, F.

“…Background Reported data regarding intraocular lymphoma (IOL) management are anecdotal. Cases of IOL included in an international multicentre series of 378…”
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Modeling nand Flash Memories for IC Design by Larcher, L., Padovani, A., Pavan, P., Fantini, P., Calderoni, A., Mauri, A., Benvenuti, A.

“…In this letter, we present a compact model of NAND flash memory strings for circuit simulation purposes. This model is modular and easy to be implemented, and…”
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On the RTS phenomenon and trap nature in Flash memory tunnel oxide by Fantini, P., Calderoni, A., Sebastiani, A., Ghidini, G.

“…Aim of this work is the investigation of Random Telegraph Signal (RTS) in Flash memory cell. Current fluctuations have been performed also as a function of…”
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92PD GEFITINIB EXPANDED ACCESS PROGRAM IN SWITZERLAND: REPORT OF LONG-TERM FOLLOW-UP by Gautschi, O, Irlé, C, Calderoni, A, Casty, A, Morant, R, Baumann, C, Renggli, V, Betticher, D

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NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads by Ramaswamy, N., Calderoni, A., Zahurak, J., Servalli, G., Chavan, A., Chhajed, S., Balakrishnan, M., Fischer, M., Hollander, M., Ettisserry, D. P., Liao, A., Karda, K., Jerry, M., Mariani, M., Visconti, A., Cook, B. R., Cook, B. D., Mills, D., Torsi, A., Mouli, C., Byers, E., Helm, M., Pawlowski, S., Shiratake, S., Chandrasekaran, N.

“…We present NVDRAM, the world's first dual-layer, high-performance, high-density (32Gb) and non-volatile ferroelectric memory technology. NVDRAM uses an…”
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Daily practice use of bortezomib in relapsed/refractory multiple myeloma: Safety/efficacy results of a compassionate use program in Switzerland by Freimann, H, Calderoni, A, Cornu, P, Olie, R

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Reset current distributions in phase change memories by Calderoni, A, Ferro, M, Ventrice, D, Ielmini, D, Fantini, P

“…In this work a new analytical transport model for the readout region of amorphous GST is proposed. The model is employed to assess, through Monte Carlo (MC)…”
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Evolution of the water chemistry of Lake Orta after liming by CALDERONI, Alcide, TARTARI, Gabriele A.

“…Since 1963 Lake Orta has been an emblematic case of industrial pollution by heavy metals and acidifying compounds (ammonium sulphate), to the extent that up to…”
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Field-accelerated structural relaxation in the amorphous state of phase change memory by Fantini, P., Ferro, M., Calderoni, A.

“…This work shows the experimental evidence of the acceleration of the resistance drift phenomenon over time by means of a constant bias applied to a phase…”
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Understanding switching variability and random telegraph noise in resistive RAM by Ambrogio, S., Balatti, S., Cubeta, A., Calderoni, A., Ramaswamy, N., Ielmini, D.

“…A deeper understanding of the noise and variability sources in resistive switching memory (RRAM) is needed for device improvement and scaling down. To meet…”
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Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) by Balatti, S., Ambrogio, S., Wang, Z.-Q, Sills, S., Calderoni, A., Ramaswamy, N., Ielmini, D.

“…Oxide-based resistive memory (RRAM) is under scrutiny for possible use for non-volatile storage and storage-class memory (SCM) complementing DRAM and SRAM. For…”
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Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-time unsupervised machine learning by Ambrogio, S., Balatti, S., Milo, V., Carboni, R., Wang, Z., Calderoni, A., Ramaswamy, N., Ielmini, D.

“…We present a new electronic synapse for neuromorphic computing consisting of a 1T1R structure based on HfO 2 RRAM technology, and capable of STDP and pattern…”
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Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) by Wang, Z.-Q, Ambrogio, S., Balatti, S., Sills, S., Calderoni, A., Ramaswamy, N., Ielmini, D.

“…Resistive switching memory (RRAM) is raising interest for future storage-class memory (SCM) and embedded applications due to high speed operation, low power…”
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