Search Results - "Caine, E.J."

Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors by Bolognesi, C.R., Caine, E.J., Kroemer, H.

“…We demonstrate high-speed InAs/AlSb-based heterostructure field-effect transistors (HFET's) displaying greatly improved charge control properties and enhanced…”
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Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor by Bolognesi, C.R., Werking, J.D., Caine, E.J., Kroemer, H., Hu, E.L.

“…High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are…”
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Improved charge control and the frequency performance in InAs/AlSb HFET's by Bolognesi, C.R., Caine, E.J., Kroemer, H.

“…Summary form only given. It is shown how the well thickness and the buffer layers influence the charge control properties of InAs/AlSb HFETs (heterostructure…”
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Fabrication and characterization of III–V compound semiconductor Bragg-Fresnel lenses for hard x-ray microfocusing by Caine, E.J., Shi, S., Hu, E.L., Li, Y., Idziak, S.H.J., Subramanian, G., Safinya, C.R.

“…Hard x-ray phase Bragg-Fresnel lenses (BFLs) have been made in III–V semiconductors of (111) GaAs and InP, and in Si for comparison purposes. Diffractive…”
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Improved charge control and frequency performance in InAs/AlSb HFETs by Bolognesi, C.R., Caine, E.J., Kraemer, H.

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A GaP decomposition source for producing a dimer phosphorus molecular beam free of gallium and tetramer phosphorus by Mondry, M. J., Caine, E. J., Kroemer, H.

“…The complications arising in the molecular beam epitaxial growth of phosphides are reduced through the use of a diatomic phosphorus beam. We have fabricated a…”
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An (Al,Ga)As/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter by Rao, M.A., Caine, E.J., Long, S.I., Kroemer, H.

“…Graded regions of n-(Ga,In)As and p-Ga(As,Sb) were incorporated side-by-side as emitter and base contacts, respectively, into an n-p-n (Al,Ga)As/GaAs…”
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IIIA-5 AlGaAs/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter by Rao, M.A., Caine, E.J., Long, S.I., Kroemer, H.

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VIA-1 staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verification by Caine, E.J., Subbanna, S., Kroemer, H., Merz, J.L., Cho, A.Y.

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